AMPLIFIER MMIC MARKING CODE S2 Search Results

Contextual Info: SIEMENS BGA318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P.-idB at 1.0 G • 3 dB-bandwidth: DC to 1.2 Gf RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code

Contextual Info: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code

Contextual Info: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

BGA312

Abstract: Q62702-G0042 mmic-amplifier BMS 13-58 Type 01
Contextual Info: BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 11 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.0 GHz l Plastic Package -1dB Type Marking BGA312 BMs Ordering Code 8-mm taped Q62702-G0042

BGA310

Abstract: Q62702-G0041
Contextual Info: BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 9 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.4 GHz l Plastic Package -1dB Type Marking BGA310 BLs Ordering Code 8-mm taped Q62702-G0041

BGA318

Abstract: Q62702-G0043
Contextual Info: BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 16 dB typical Gain at 1.0 GHz l 12 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 1.2 GHz l Plastic Package -1dB Type Marking BGA318 BNs Ordering Code 8-mm taped Q62702-G0043

Contextual Info: S IE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 £2-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidttv. DC to 2.0 GHz Plastic Package Type Marking BGA312 BMs Ordering Code

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

SMM5845V1

Abstract: MMIC marking code U
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

EMM5068

Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages

BGA2776

Abstract: SMD MARKING g5 snw-eq-608 MGU455
Contextual Info: BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES High Output Power: Pout=30.0dBm typ. Linear Gain: GL=15.0dB (typ.) Frequency Band: 29.5 to 30.0GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5841V1B is a MMIC amplifier that contains a threestages amplifier, internally matched, for standard communications

Contextual Info: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・Linear Gain: GL=25.0dB (typ.) ・Frequency Band: 12.7 to 15.4GHz ・Impedance Matched Zin/Zout=50ohm ・Integrated Power Detector ・Small Hermetic Metal-Ceramic SMT Package(V1B)

Contextual Info: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. Linear Gain: GL=25.0dB (typ.) Frequency Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Integrated Power Detector Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

072149

Abstract: 65434 83004 philips BGA2717 marking 52 sot363 MMIC marking 81
Contextual Info: BGA2717 MMIC wideband amplifier Rev. 02 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

Contextual Info: EMM5836V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 17.7 to 19.7GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5836V1B is a MMIC amplifier that contains a four-stages

EMM5074VU

Abstract: EMM5074
Contextual Info: EMM5074VU C-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33dBm typ. High Linear Gain: GL=27dB (typ.) Broad Band: 5.8 to 8.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5074VU is a wide band power amplifier MMIC that