AMPLIFIER MMIC MARKING CODE S2 Search Results

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIEM ENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-G ain Block 9 dB typical Gain at 1.0 GHz 9 dBm typical P.1llB at 1.0 GHz 3 dB-Baridwidth: DC to 2.4 GHz Plastic Package Type Marking BGA310 BLs Ordering Code

Contextual Info: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: EMM5838V1B Ka-Band Power Amplifier MMIC FEATURES • High Output Power: Pout=26.0dBm typ. • High Linear Gain: GL=25.0dB (typ.) • Frequency Band: 29.5 to 30.0GHz • Impedance Matched Zin/Zout=50ohm • Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

Contextual Info: TAT9988 CATV GaN Power Doubler MMIC Applications • HFC Nodes • CATV Line Amplifiers • Head End Equipment 40 Pin 5x7 mm QFN Package Product Features • • • • • • • • • • Functional Block Diagram Excellent High Output Linearity High Gain 24dB @ 1000MHz

SMM5845V1

Abstract: MMIC marking code U
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

EMM5068

Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages

BGA2776

Abstract: SMD MARKING g5 snw-eq-608 MGU455
Contextual Info: BGA2776 MMIC wideband amplifier Rev. 04 — 29 August 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: EMM5841V1B Ka-Band Power Amplifier MMIC FEATURES High Output Power: Pout=30.0dBm typ. Linear Gain: GL=15.0dB (typ.) Frequency Band: 29.5 to 30.0GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5841V1B is a MMIC amplifier that contains a threestages amplifier, internally matched, for standard communications

Contextual Info: SMM5085V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. Linear Gain: GL=25.0dB (typ.) Frequency Band: 12.7 to 15.4GHz Impedance Matched Zin/Zout=50ohm Integrated Power Detector Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

EMM5074VU

Abstract: EMM5074
Contextual Info: EMM5074VU C-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33dBm typ. High Linear Gain: GL=27dB (typ.) Broad Band: 5.8 to 8.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5074VU is a wide band power amplifier MMIC that

SMA MARKING 1475

Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

Contextual Info: EMM5836V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION

EMM5832VU

Contextual Info: EMM5832VU K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=31.0dBm typ. High Linear Gain: GL=20.0dB (typ.) Broad Band: 21.2 to 26.5GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage

Contextual Info: EMM5081V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (V1B) DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages

marking code AN mmic

Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage

bga2714

Abstract: MMIC marking code SC ba 458 smd 001119 204 02
Contextual Info: BGA2714 MMIC wideband amplifier Rev. 01 — 24 May 2007 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

MMIC marking code R

Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

MMIC marking code SC

Abstract: BGM1013 MLG1608 SMD INDUCTOR 100 rf mmic marking code 09 SOT363
Contextual Info: BGM1013 MMIC wideband amplifier Rev. 04 — 1 May 2006 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

MMIC marking CODE AC

Abstract: LK1608R47K-T AN176 BGB717L7ESD TSLP MMIC marking code R mmic amplifier marking code l
Contextual Info: D a t a S he et , R e v . 3 . 2 , F e b r u a r y 2 01 0 BGB717L7ESD S i G e :C L o w N o i s e A m p l i f ie r M M I C f o r F M R a d i o A p pl i c a t i o n s S m a l l S i g n a l D i s c r et e s Edition 2010-02-09 Published by Infineon Technologies AG,