AMPLIFIER MARKING CODE A Search Results

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

A 798 transistor

Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

Transistor 1308

Abstract: FJC1308 FJC1963
Contextual Info: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

transistor b1 y 016

Abstract: KSB798
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

Contextual Info: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

FJC1308

Abstract: FJC1963
Contextual Info: FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

TRANSISTOR marking ar code

Abstract: KSA1201 KSC2881
Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

STB1277

Abstract: Transistor TRANSISTOR stb1277 STD1862
Contextual Info: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92

TRANSISTOR a1981

Abstract: a1981 TRANSISTOR 2sa1981 2sa1981 2sc5344 9003
Contextual Info: 2SA1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. 2SA1981 Marking Package Code A1981 TO-92 Outline Dimensions

2N4416A

Contextual Info: 2N4416 2N4416A Central TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber

STD1862

Abstract: Transistor std1862 TRANSISTOR STB1277 TRANSISTOR stb1277
Contextual Info: STD1862 Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277 Ordering Information Type NO. Marking STD1862 STD1862 Package Code TO-92

2sa1981

Abstract: Transistor TRANSISTOR a1981 A1981 2sc5344
Contextual Info: 2SA1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Outline Dimensions

2n4416 transistor

Abstract: 2N4416A TM2N4416 300300 5007 5MA1 2N4416 "N-Channel JFET"
Contextual Info: 2N4416 2N4416A Central TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber

2sc5344

Abstract: Transistor TRANSISTOR C5344 c5344 TRANSISTOR 2sc5344 NPN C5344 2sa1981 9006 transistor C5344 PDF DOWNLOAD ic audio
Contextual Info: 2SC5344 Semiconductor NPN Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981 Ordering Information Type NO. Marking 2SC5344 C5344 Package Code TO-92 Outline Dimensions

STD1862L

Abstract: Transistor STD1862 STB1277 transistor cb 170 STB1277L
Contextual Info: STD1862L Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L Ordering Information Type NO. Marking STD1862L STD1862 Package Code TO-92L

Contextual Info: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

FJC1386

Abstract: FJC2098 SOT89 transistor marking 4A
Contextual Info: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

3402 transistor

Abstract: STA353 STC352 003A MARKING TRANSISTOR ic 2501
Contextual Info: STC352 Semiconductor NPN Silicon Transistor Descriptions • High current application • Audio power amplifier Features • High current : IC = 2A • Complementary pair with STA353 Ordering Information Type NO. Marking STC352 STC352 Package Code MPT Outline Dimensions

2N55551

Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit