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    AMP. MOSFET 800 WATT Search Results

    AMP. MOSFET 800 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK425G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    AMP. MOSFET 800 WATT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LT-85

    Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 40W, 26V 500 -1000 MHz LF2840G V2.00 Features • • • • • N-Channel Enhancem ent Mode Device 40 Watts CW Com m on Source Gemini Configuration RF.SFET Structure Gold Metallization T“ ill D Absolute Maximum Ratings at 25°C


    OCR Scan
    LF2840G b7-17 LT-85 PDF

    Contextual Info: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs


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    PA50A 546-APEX TE9493 PA50U PDF

    Contextual Info: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs


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    PA50A 546-APEX TE9493 PA50U PDF

    Transistor Equivalent list

    Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
    Contextual Info: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


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    DU2860U 9-18OpF Transistor Equivalent list transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860 PDF

    20 amp MOSFET transistor

    Abstract: MOSFET POWER TRANSISTOR DU2880V
    Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C


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    DU2880V 5-j14 20 amp MOSFET transistor MOSFET POWER TRANSISTOR DU2880V PDF

    Transistor Equivalent list

    Abstract: SEMCO 20 amp MOSFET transistor DU1260T
    Contextual Info: .-I -=c z an AMP company = RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz DU1260T v2.00 Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


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    DU1260T DU12BOT Transistor Equivalent list SEMCO 20 amp MOSFET transistor DU1260T PDF

    Contextual Info: 108&301&3"5*0/"-".1-*'*&34 PA50 • PA50A M I C R O T E C H N O L O G Y 551888"1&9.*$305&$)$0.  "1&9   FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs


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    PA50A PA50U PDF

    UF28156

    Abstract: UF2815B L5 mosfet
    Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation


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    UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet PDF

    transistor v2w

    Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
    Contextual Info: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor


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    LF281 rt-l-970' transistor v2w transistor C 2240 TRANSISTOR 500 PL031 TT 2240 PDF

    UF284OP

    Contextual Info: an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF284OP Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Absolute Maximum Ratings at 25°C


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    UF284OP lOOW42SV. wlF25oNNsmr-RmDco~ lsTum5ra22AvGvw UF284OP PDF

    UF2815OJ

    Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C


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    UF2815OJ -65to UF2815OJ PDF

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 PDF

    DU2820S

    Abstract: fl capacitor 1000 K 739 mosfet
    Contextual Info: -= -=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz DU2820S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C


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    DU2820S DlJ2820S DU2820S fl capacitor 1000 K 739 mosfet PDF

    SEMCO

    Abstract: DU1230S SEMCO CL
    Contextual Info: = - =- an AMP company = = RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz DUI 230s Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


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    -55to DU123OS SEMCO DU1230S SEMCO CL PDF

    8N45

    Abstract: EER40 MC34065 MC33065 MC33065DW MC33065-H MC33065P MC34065DW MC34065-H MC34065P
    Contextual Info: ON Semiconductort MC34065-H, L MC33065-H, L High Performance Dual Channel Current Mode Controllers The MC34065–H,L series are high performance, fixed frequency, dual current mode controllers. They are specifically designed for off–line and dc–to–dc converter applications offering the designer a


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    MC34065-H, MC33065-H, MC34065 r14525 8N45 EER40 MC33065 MC33065DW MC33065-H MC33065P MC34065DW MC34065-H MC34065P PDF

    pulse transformer bv 070

    Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
    Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation


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    UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer PDF

    transistor 1 j42

    Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
    Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation


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    UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43 PDF

    UF28100M

    Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E
    Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C


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    UF281 73XD1B2-03 UF28100M UF281OOM Amp. mosfet 500 watt ISS135 S80E PDF

    transistor c 2499

    Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
    Contextual Info: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


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    DU28120T S-16OpF DU26120T transistor c 2499 transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499 PDF

    UC3843A datasheet

    Abstract: UC2843AD2 UC3843A UC3842AN FREE pin diagram of ic UC3843AD UCX843A UC3843a applications EC35-3c8 UC2843A UC284XA
    Contextual Info: UC3842A, UC3843A, UC2842A, UC2843A High Performance Current Mode Controllers The UC3842A, UC3843A series of high performance fixed frequency current mode controllers are specifically designed for off–line and dc–to–dc converter applications offering the designer a


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    UC3842A, UC3843A, UC2842A, UC2843A UC3843A r14525 UC3842A/D UC3843A datasheet UC2843AD2 UC3842AN FREE pin diagram of ic UC3843AD UCX843A UC3843a applications EC35-3c8 UC2843A UC284XA PDF

    d408

    Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to


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    RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz d408 DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1-101 DD 128 transistor PDF

    CS5421

    Abstract: CS5421GD16 CS5421GDR16
    Contextual Info: CS5421 Dual Out-of-Phase Synchronous Buck Controller with Remote Sense The CS5421 is a dual N–channel synchronous buck regulator controller. It contains all the circuitry required for two independent buck regulators and utilizes the V2 control method to achieve the


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    CS5421 CS5421 r14525 CS5421/D CS5421GD16 CS5421GDR16 PDF

    RA45H7687M1

    Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to


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    RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 45WATT DD 128 D transistor PDF

    UC3843A datasheet

    Abstract: uc2842a UC3843A UCX842A uc3842an UCX843A UC2843A UC284XA UC3842A UC384XA
    Contextual Info: UC3842A, UC3843A, UC2842A, UC2843A High Performance Current Mode Controllers The UC3842A, UC3843A series of high performance fixed frequency current mode controllers are specifically designed for off–line and dc–to–dc converter applications offering the designer a


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    UC3842A, UC3843A, UC2842A, UC2843A UC3843A r14525 UC3842A/D UC3843A datasheet uc2842a UCX842A uc3842an UCX843A UC2843A UC284XA UC3842A UC384XA PDF