AMI SEMICONDUCTORS Search Results

PEEL20CG10

Abstract: PALC20G10
Contextual Info: AMI PEEL 20CG10 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

peel153

Contextual Info: PEEL 153 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL153 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,

18CV825

Abstract: PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell PEEL18CV8 18CV8-15
Contextual Info: PEEL 18CV8 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

18CV8

Abstract: 18CV8-15 18CV815 ami equivalent gates 18CV825 PEEL18CV8
Contextual Info: PEEL 18CV8 AMI SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

PEEL 253

Contextual Info: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,

AMI semiconductors

Contextual Info: AMI PEEL 273 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL273 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,

22CV10Z

Contextual Info: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

18CV8

Abstract: 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 PEEL18CV8 AMI PEEL18CV8
Contextual Info: AMI PEEL 18CV8 SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

PEEL20CG10

Abstract: 20CG10 PEEL 20Cg10 PALC20G10
Contextual Info: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

PEEL programming

Abstract: PEEL173 Erasable Programmable Logic Device 610 PLS173 8-12pF
Contextual Info: AMI PEEL 173 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description FPLA Architecture The AMI PEEL173 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power,

1B60

Abstract: PEEL programming msi ms 1772
Contextual Info: AMI PEEL 173 SEMICONDUCTORS CM O S Programmable Electrically Erasable Logic Device February 1993 Features General Description FPLA Architecture The AMI PEEL173 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power,

22cv10

Contextual Info: PEEL 22CV10 Z AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

peel273

Contextual Info: AMI PEEL 273 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL273 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,

PEEL 253

Abstract: PEEL253
Contextual Info: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,

Contextual Info: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable, and architecturally enhanced alternative to conventional

74HCT Logic Family Specification

Abstract: S5014
Contextual Info: GO UL D 4DE D INC/ GO U L D A M I •> GOULD AMI ■ M G S S ^ l b 0 G 1 3 Ü S 4 1 ■ AMI 12-Blt, 7 /^s SelfCalibrating A/D Converter a Semiconductors S5012 Features General Description • Monolithic CMOS A/D converter Microprocessor Compatible Parallel and Serial Output

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

Contextual Info: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Device Product Preview * Semiconductors PEEL 20CG10-15 — Synchronous preset, asynchronous clear — Independent programmable output enables Features • Advanced CM OS EEPROM Technology • Application Versatility

PEEL programming

Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
Contextual Info: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able

Contextual Info: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Array Device Ptellmlaary Data • Semiconductors PEEL PA7040 General D escription User-Configurable High Density Logic Array • Create multi-level l/O-buried logic circuits • Over 120 sum-of-products functions

peel153

Abstract: PEEL programming
Contextual Info: PEEL 153 a m i SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced C M O S EEPRO M Technology The AMI PEEL153 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance,

AMI 9900 FAMILY

Contextual Info: •> GOULD A N V I Semiconductors S9980A 16-BIT MICROPROCESSOR January 1979 Features General Description □ □ The S9980A microprocessor is a software-compatible member of AMI’s 9900 family of microprocessors. Designed to minimize the system cost for smaller sys­

Contextual Info: • > GOULD AMI CM OS Programmable Electrically Erasable Logic Device Prelim inary Data Sheet Semiconductors PEEL 18CV8-10 Features — Synchronous preset, asynchronous clear — Independent output enables • A dvanced C M O S E EPRO M Technology • A pplication Versatility

Contextual Info: •> GOULD AMI * Semiconductors ASIC Products Gale Arrays Gould AMI's arrays are fabricated in a double or triple metal, single poly, twin-tub CMOS process. They offer the CMOS advantages of low power dissipation, broad power supply voltage range (2.5 to 5.5 Volts), and high