AM8171 Search Results

Bv 42 transistor

Contextual Info: SGS-THOMSON 5 7 , AM81719-040 RF & M ICROW AVE TRANSISTO RS T ELEM ETR Y APPLICATIONS P R E L IM IN A R Y D A T A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 40 W MIN. WITH 7 dB GAIN

AM81719-040

Contextual Info: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LFL M228

Contextual Info: AM81719-040 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG E DESCRIPTION: The ASI AM81719-040 is a Common Base Device Designed for Class C, CW communications Applications up to 1.85 GHz. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization

M147

Abstract: AM81719-030
Contextual Info: AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 28 W MIN. WITH 6.7 dB GAIN

AM81719-030

Abstract: M147
Contextual Info: AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN

LM228

Abstract: AM81719-040 DSA00379325
Contextual Info: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L M228

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

DMO12

Abstract: sung wei AM95C60 dm38 DM16 24 DM20 DM32 DM33 DM35 DM37
Contextual Info: Am95C60 Quad Pixel Dataflow Manager PRELIMINARY DISTINCTIVE CHARACTERISTICS Generates mixed text and graphics within Display Mem­ ory Draws vectors up to 3.3 million pixels per second, or places text at 50,000 characters per second One chip handles four Display Memory planes of any

Contextual Info: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING

S042

Abstract: AM81719-030 AM81719-040 AM82022-020 AM82223-001 AM82223-003 AM82223-006 AM82223-010
Contextual Info: S IL IC O N P O W E R T R A N S IS T O R S A group of high efficiency, c o m m o n -b ase p ow er d evices have been specifically optim ized for d a ta link and other telem etry applications in th e 1.7 - 2 .4 G H z range. E m itter-ballasted, refractory-gold m etallized die g eom etries are

DM20

Abstract: DM32 DM33 DM35 DM37 DM38
Contextual Info: Am95C60 Quad Pixel Dataflow Manager PRELIMINARY DISTINCTIVE CHARACTERISTICS Generates mixed text and graphics within Display Mem­ ory Draws vectors up to 3.3 million pixels per second, or places text at 50,000 characters per second One chip handles four Display Memory planes of any

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

SO42

Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Contextual Info: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520

DM-313

Abstract: dm2g Am95C60 b
Contextual Info: A D V A N C E D ni C R O D E V I C E S fli I •■ 0257525 D Ë J DBS7SES GDSS23D 7 ni ■ ADVANCED M ICRO DEVICE?. 8 9 D 25230 Dyt 3 'O f Am95C60 Quad Pixel Dataflow Manager PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Generates mixed text and graphics within Display Memory

7330-9

Contextual Info: ADVANCED MICRO DEVICES * D Ë | 0E57555 ODBISTT 7 | ~ 0257525 ADVANCED MICRO DEVICES 76C 21579 A m 8 1 7 1 / A m 8 1 7 2 D T 'r t '3 % '0 ? Video Data Assembly FIFO VDAF ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Supports smooth panning and hardware windows

Contextual Info: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

175185 PIN

Contextual Info: SILICON POWER TRANSISTORS TELEMETRY/COMMUNICATIONS TRANSISTORS A group of high efficiency, common-base power devices have been specifically optimized for data link and other telemetry/communications applications in the 1.7 - 2.4 GHz range. Emitter-ballasted, refractory-gold metallized die

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition