AM29F040 AMD Search Results

Contextual Info: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are

Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC. 512Kx32 Flash The EDI7F33512, E D17F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

AM29F040

Abstract: EDI7F33512C
Contextual Info: EDI7F33512C 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

1.5528

Abstract: EDI7F33512C AM29F040 2192
Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Am29F040

Contextual Info: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Automatically preprograms and erases the chip

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

AMD date code 29f040

Abstract: Am29F040 lora
Contextual Info: ZI FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

Am29F040

Contextual Info: CONDENSED ADVANCE INFORMATION Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands

29F040

Contextual Info: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards

Maxim 17113

Abstract: 29F040 29F040 equivalent
Contextual Info: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ ■ Em bedded Program Algorithm s

AM29F040B

Abstract: AM29F040B-120 AM29F040B-90 AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B amd
Contextual Info: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device

17113e

Contextual Info: FINAL AMDB Am 29F040 4 M e g a b i t 5 2 4 , 2 8 8 x 8-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5. 0 V ± 1 0 % f or r e a d a n d w r i t e o p e r a t i o n s ■ — Minimizes system level power requirements

AMD29F040

Abstract: amd elan sc400 AMD Series D flash memory card SC400 4MB flash bios chip "ActionTec" JP36 RESET BIOS JUMPER AM29F040 Phoenix BIOS manual
Contextual Info: Demonstration with the AMD Elan SC400 Evaluation Board rev. 3.0 Procedure that follows describes the steps required to install and run the Datalight BIOS Evaluation Copy on the AMD Elan SC400 Evaluation Board (rev. 3.0). Note: Datalight recommends operating the evaluation board in accordance with proper static

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

am29f400 die

Abstract: 29F400-X Am29f400 equivalent AM29F010 AM29F010 die
Contextual Info: PRELIMINARY Advanced Micro Devices Flash Memories in Die Form DISTINCTIVE CHARACTERISTICS • Testing of AC and DC parameters ■ Advanced CMOS Flash memory technology ■ Operating temperature ranges: ■ High typical yield — 98% after assembly — Commercial 0°C to 70°C

programming AM29F400

Abstract: AM29F016 AM29F040 AM29F400 AM29LV800A 29lv800A 8H33H
Contextual Info: Common Flash Memory Interface Specification Application Note 1. CFI Introduction 1.1 Purpose The Common Flash Interface CFI specification outlines device and host system software interrogation handshake that allows specific vendor-specified software algorithms to be used for entire families of devices.

27C080

Abstract: 27C64 W27c256 W27F512 W27F010 TI 27c010 27C256 27C040 27C128 Q100
Contextual Info: EPP-3 Device List The EPP-3 can program 27xxx devices by means of the list of general devices. In order to program 27xxx devices the programming specs of the device which are no a days provided freely on the internet can be usefull (just follow the links on our WebSite: http://www.artbv.nl).

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

flash card 68 pin

Contextual Info: CONDENSED AMD3 AmCOXXDFLKA 4,8,20, or 32 Megabyte 5.0 Volt-only “D-Series’ Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance — 150 ns maximum access time ■ Single supply operation — Write and erase voltage, 5.0 V ±5% — Read voltage, 5.0 V ±5%

Intel BGA

Abstract: ROHM R25 c143 epson c45 LH5168SHN RN66 IEEE-1386 epson c67 145154-4 c86 sot23
Contextual Info: # Board Statio n BOM file # date : Wednesday November 29, 2000; 11:57:19 # Variant : No_Stuff Sandpoint_X Updated on 2 ITEM COUNT REFERENCE 1 COMPANY PART NO. ppceval-sp3 rev x3 1 2 C1 05085C103MA11A 1 3 C71 C90 C91 C92 C93 C94 C95 C96 C138 05085C104MA11A

am29f040b

Contextual Info: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

AM29F040 die

Abstract: AM29F040B 98E07A AMD flash am29f040b die
Contextual Info: SUPPLEMENT Am29F040B in Die Form 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology