AM29F040 AMD Search Results

Contextual Info: Data Sheet 296054 FlashLite Wordwide Memory Card— AMD AM29F040 janwreva Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 1 MByte, based on AMD AM29F040 Flash Technology ■ Eight Equal Size Sectors of 128 KBytes Each in Wordwide Mode

AM290F040

Abstract: F3351 512KI x8 F335-12 f33512
Contextual Info: WDÌ EDI7F33512C 512Kx32Flash ELECTRONICDESJGW S.INC. 512Kx32 Flash TheE DI7F3351 EDI7F233512 and E DI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32respectively.Themodulesarebasedon AMD’s AM29F040-512Kx8 Flash Device in TSOP EDI7F33512CSNC

367 al

Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

Contextual Info: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are

Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC. 512Kx32 Flash The EDI7F33512, E D17F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

AM29F040

Abstract: EDI7F33512C
Contextual Info: EDI7F33512C 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

17113e

Abstract: AM29F040 amd 29f040 29F040 17113E-14
Contextual Info: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash

1.5528

Abstract: EDI7F33512C AM29F040 2192
Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

AMD Series D flash memory card

Abstract: Am29F040 AMD marking CODE flash
Contextual Info: PCMCIA Flash Memory Card FLC Series White Electronic Designs 1 MEGABYTE through 10 MEGABYTE AMD based FEATURES The WEDC FLC series is based on AMD Am29F040 Flash memories; the FLC04 is a direct equivalent of AMD’s AmC0XXCFLKA, however it offers wider range of

AN945

Abstract: m29f040 library AM29F040B AN945 data sheet M29F040 M29W040 MC68331 ST10R163 AM29F040 i80960
Contextual Info: AN945 APPLICATION NOTE Software Drivers for M29F040 and M29W040 Flash Memories CONTENTS Introduction The M29F040 Programming Model Modifying code from Am29F040 Generating STMicroelectronics Code C Library Functions Adapting the Software for the Target System

AN945

Abstract: M29F040 M29W040 MC68331 ST10R163 m29f040 library
Contextual Info: AN945 APPLICATION NOTE SOFTWARE DRIVERS for M29F040 and M29W040 FLASH MEMORIES CONTENTS Introduction The M29F040 Programming Model Modifying code from Am29F040 Generating SGS-THOMSON Code C Library Functions Adapting the Software for the Target System Limitations of the code

Am29F040

Contextual Info: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Automatically preprograms and erases the chip

Am29F040

Abstract: 29F040 17113
Contextual Info: CONDENSED ADVANCE INFORMATION Advanced Micro Devices Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

atmel 8086

Abstract: atmel h 208 AT29C040 Am29F040 EPROM databook AMD 28SF040 SST28SF040 EPROM 40PIN JEDEC MS-026 footprint 32pin
Contextual Info: Designing In SST’s 28SF040 4 Megabit SuperFlash EEPROM Application Note 1.0 INTRODUCTION This design note describes the key benefits of SST’s 28SF040 SuperFlash memory and how it can be used in existing AMD Am29F040 and Atmel AT29C040 designs. 2.0 Benefits of SST’s 28SF040

AMD date code 29f040

Abstract: Am29F040 lora
Contextual Info: ZI FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

AM29F040B-120

Abstract: AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 CS39S
Contextual Info: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device

Am29F040

Contextual Info: CONDENSED ADVANCE INFORMATION Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands

29F040

Contextual Info: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards

AM29F040

Abstract: AM29F040A 17113D-7 29F040 AMD date code 29f040 AM29F040 amd
Contextual Info: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

17113e

Abstract: Am29F040 Max 17113 29F040 amd 29f040 AMD date code 29f040
Contextual Info: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash

Am29F040

Contextual Info: Data Sheet 124376 FlashLite Byte-W ide M em ory C a rd — A M D A M 29F040 JUNE 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KByte, based on AMD AM29F040 Flash Technology ■ Eight Equal Size Sectors of 64 KBytes each