AM12 Search Results

M259

Abstract: M-259 AM1214-250 XAM1214-250
Contextual Info: AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 300 W MIN. WITH 8.0 dB GAIN

AM12T-2412SZ

Contextual Info: Series AM12T-Z 12 Watt | DC-DC Converter FEATURES: • • • • • Wide Input Range 2:1 1600 Vdc Isolation Efficiency up to 91% Soft Start Remote On/Off Function • • • • • No Minimum Load Required -40ºC to +85ºC Operating Temperature Range

Contextual Info: Analog Power AM12N50P N-Channel 500-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 500 Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting

AM1214-325

Contextual Info: AM1214-325 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN

AM12TW-Z

Abstract: AM12TW-2405SZ
Contextual Info: Series AM12TW-Z 12 Watt | DC-DC Converter FEATURES: • • • • • Ultra Wide Input Range 4:1 1600 VDC Isolation Efficiency up to 90% Soft Start Remote On/Off Function • • • • • No Minimum Load Required -40ºC to +85ºC Operating Temperature Range

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

Contextual Info: Series AM12T-Z 12 Watt | DC-DC Converter FEATURES: • • • • • Wide Input Range 2:1 1600 Vdc Isolation Efficiency up to 91% Soft Start Remote On/Off Function • • • • • No Minimum Load Required -40ºC to +85ºC Operating Temperature Range

AM1214-300

Contextual Info: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

121-417

Abstract: AM1214-175 104-0012 1215 mhz to 1400mhz rf amplifier
Contextual Info: AM1214-175 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN

AM1214-300

Contextual Info: AM1214-300 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN

Contextual Info: Analog Power AM12N65P N-Channel 650-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 650 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

Contextual Info: Click on Series name for product info on aimtec.com Series AM12E-FZ 12 Watt | DC-DC Converter FEATURES: • • • • • Models Single output Model AM12E-1203SH30-FZ AM12E-1205SH30-FZ AM12E-1212SH30-FZ AM12E-1215SH30-FZ AM12E-2403SH30-FZ AM12E-2405SH30-FZ

M259

Abstract: AM1214-130 AM1214-250 XAM1214-130
Contextual Info: AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 130 W MIN. WITH 8.0 dB GAIN

Contextual Info: Click on Series name for product info on aimtec.com Series AM12TW-Z 12 Watt | DC-DC Converter FEATURES: •     Ultra Wide Input Range 4:1 1600 VDC Isolation Efficiency up to 90% Soft Start Remote On/Off Function      No Minimum Load Required

IC 7475

Abstract: 40w electronic ballast AL203 AM1214-200 capacitor 100 uf 63v
Contextual Info: AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 200 W MIN. WITH 7.0 dB GAIN

Contextual Info: Series AM12TW-Z 12 Watt | DC-DC Converter FEATURES: • • • • • Ultra Wide Input Range 4:1 1600 VDC Isolation Efficiency up to 90% Soft Start Remote On/Off Function • • • • • No Minimum Load Required -40ºC to +85ºC Operating Temperature Range

AM124

Abstract: triple-band antenna switch
Contextual Info: Preliminary Triple-Band GaAs IC Antenna Switch Module AM124 Applications • Tri Band Antenna Switch for GSM Handsets 5.4 x 4.0 x 1.7 mm Outline Drawing 0.044 1.14 mm 5.60 MOLD CAP DIMENSION ONLY 12 11 9 10 8 7 Features ■ Integrated Diplexer, TX LPFs, GaAs

124AD

Abstract: 1age IR 224A 324AD
Contextual Info: Am124/224/324 Am124A/224A/324A Quad Op Amps Distinctive Characteristics • • • • • • • Wide power supply range: Single supply — 3V to 30V Dual supplies — + 1.5V to ±15V • Very low supply current drain 800/iA — essentially independent o f supply voltage C lm W /op amp at +5V)

"Op Amp" LM 324N

Abstract: "Op Amp" lm 324 IC 224A 324AD
Contextual Info: Am124/224/324 Am124A/224A/324A Quad Op Amps Distinctive Characteristics • • • • • • • Wide power supply range: Single supply — 3V to 30V Dual supplies — ±1.5V to ±15V • Very low supply current drain 800juA — essentially independent o f supply voltage (1m W /op amp at +5V)

XXZPB100

Abstract: XX7V1A1PAM12 XX7V1A1NAM12 XZC-C12FDM40B PUSH BOTON xzcc12FCM40B XZ-CP1241L10 XZC-P1141L10 manuel xxzpb100 voyants led
Contextual Info: XX7V1A1.AM12 AM12: NO / NPN output; Sortie NPN / N.O.; SCHLIESSER / NPN-Ausgang; Salida NO / NPN; Uscita NO / NPN; Saída NO / NPN AM12: NO / PNP output; Sortie PNP / N.O.; SCHLIESSER / PNP-Ausgang; Salida NO / PNP; Uscita NO / PNP; Saída NO / PNP

AM120MH2-BI-R

Contextual Info: AM120MH2-BI-R Aug 2010 Rev 4 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM120MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total

104-0012

Abstract: AM1214-175
Contextual Info: AM1214-175 . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN

AM1214-6

Abstract: common base transistor
Contextual Info: AM1214-6 RF POWER TRANSISTOR DESCRIPTION: The ASI 1214-6 is a Common Base Transistor Designed for Long Pulse High Reliability L-Band Radar Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL

M259

Abstract: AM1214-250 XAM1214-250 V3003-50
Contextual Info: AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 300 W MIN. WITH 8.0 dB GAIN