ALSIC 105 Search Results

capax 7-35

Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Contextual Info: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145

DIM600DDM17-A000

Contextual Info: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.1 September 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *

DIM400GCM33-F000

Contextual Info: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.0 September 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ)

DFM1200NXM33-F000

Abstract: 100FITS
Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating

DFM100PXM33-F000

Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM200PXM33-A000

Contextual Info: DFM200PXM33-A000 Fast Recovery Diode Module Replaces DS5496-2 DS5496-3 April 2013 LN30362 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

A730069

Abstract: A730064 A730036 A730057 A730078 A730084 A730052 A730023 A730077 A730014
Contextual Info: ALSIC IR 8 000 h / 105°C CO 55 10 . 100 V 15 . 5600 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications NFC 83 110 Modèle C0 55 - Longue durée DIN 41240 - Classe d'utilisation – 55°C + 105°C

din 41240

Abstract: A734127 A735066 A734102 A735025 A734130 alsic A734111 A734109 A735026
Contextual Info: ALSIC HV 160 . 500 V 8 000 h / 105°C 4,7 . 2200 µF ∅ 10 . 35.5 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications DIN 41240 - Classe d'utilisation - 55 + 105°C CECC 30 300 Longue durée CEI 60 384-4 Longue durée

bi-directional switches IGBT

Abstract: DIM1200FSM17-A000 LIN26326
Contextual Info: DIM1200FSM17-A000 Single Switch IGBT Module DS5456-3.5 August 2008 LIN26326 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AlN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V 2.7V

ge traction motor

Abstract: DIM800XSM33-F000
Contextual Info: . DIM800XSM33-F000 Single Switch IGBT Module DS5906-1.1 May 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability

4500a

Abstract: C6250 DFM900NXM45-F000 4500V 900A
Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating

TRANSISTOR C 6090

Contextual Info: . DIM1200FSM17-A000 Dual Switch IGBT Module DS5456-3.2 September 2005 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability

Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate

bi-directional switches IGBT

Abstract: DIM600DDM17-A000
Contextual Info: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.2 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ)

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

data sheet IC 7400

Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Contextual Info: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon

DFM100PXM33-A000

Contextual Info: DFM100PXM33-A000 Fast Recovery Diode Module Replaces DS5564-2 DS5564-3 April 2013 LN30368 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

DFM400PXM33-F000

Abstract: DFM400PXM33-F
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module Replaces DS5909-2 DS5909-3 April 2013 LN30370 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM400PXM33-A000 Fast Recovery Diode Module Replaces DS5488-3 DS5488-4 April 2013 LN30361 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM900FXM12-A000

Abstract: DFM900FXM12-A IEC1287 10-mm
Contextual Info: DFM900FXM12-A000 Fast Recovery Diode Module Replaces DS5479-1.3 DS5479-2 April 2010 LN26758 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

DFM450NXM45

Abstract: DS5892-1 DS5892 DFM450NXM45-F000 ln2482
Contextual Info: DFM450NXM45-F000 Fast Recovery Diode Module DS5892-1.0 October 2006 LN24820 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 900A Rating

DFM100PXM33-F

Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-3 DS5907-4 December 2014 LN32180 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates