ALSET Search Results

Contextual Info: January 1998 ^Ék Micro Linear PRELIM M A R Y ML6428 S-Video Filter with Summed Composite Output GEN ERAL DESCRIPTION FEATURES TheM L 6428 isad u alY /C 4th-orderButterw orth tow pass video f i l e r optim ized 6 r m inim um oversh o o t and flat gmup delay. The device co n tain s a sum m ing circu it to

zp3 zener diode

Abstract: SDIP32 ST72141K ST72141K2
Contextual Info: ST72141K 8-BIT MCU WITH ELECTRIC-MOTOR CONTROL, ADC, 16-BIT TIMERS, SPI INTERFACE PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ Memories – 8K Program memory ROM/OTP/EPROM – 256 Bytes RAM Clock, Reset and Supply Management – Enhanced reset system – Low voltage supply supervisor

STMicroelectronics NAND256W3A

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

Contextual Info: ST72141K 8-BIT MCU WITH ELECTRIC-MOTOR CONTROL, ADC, 16-BIT TIMERS, SPI INTERFACE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ Memories – 8K Program memory ROM/OTP/EPROM – 256 Bytes RAM Clock, Reset and Supply Management – Enhanced reset system – Low voltage supply supervisor

Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■

NAND512W3A2S

Abstract: nand512r3a2s VFBGA63 NAND512W4A2S 70nM NUMonyx NAND NAND512W3A2
Contextual Info: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions  Density – 512 Mbit: 4096 blocks  Electronic signature – Manufacturer ID: x8 device: 20h

NAND02GW3B2C

Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

NAND512W3A2C

Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications

VFBGA63

Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width

block code error management, verilog source code

Abstract: NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD
Contextual Info: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1Gbit x8/x16 , 528 Byte/264 Word Page, 3V, NAND Flash Memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications

Wear Leveling in Single Level Cell NAND Flash Memory

Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
Contextual Info: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage

LGA-52

Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
Contextual Info: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage

Indirect Vector Control

Abstract: SMS BASED DC MOTOR SPEED CONTROLLER AN1082 BAT48 DR01
Contextual Info: ST72141K2-Auto 8-bit MCU for automotive with electric-motor control, ADC, 16-bit timers, SPI interface • ■ ■ ■ ■ ■ ■ Memories – 8 Kbytes Program memory OTP/EPROM – 256 bytes RAM Clock, Reset and Supply Management – Enhanced reset system

NAND02GW3B2C

Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
Contextual Info: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications

NAND01GW3B2C

Abstract: NAND01GW3B2B nand01gw3b2cza6
Contextual Info: NAND01G-B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3.0 V ■ Page size

C4858

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

C7478

Contextual Info: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage

VFBGA63

Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
Contextual Info: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass

Contextual Info: ST72141K 8-BIT MCU WITH ELECTRIC-MOTOR CONTROL, ADC, 16-BIT TIMERS, SPI INTERFACE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ Memories – 8K Program memory ROM/OTP/EPROM – 256 Bytes RAM Clock, Reset and Supply Management – Enhanced reset system – Low voltage supply supervisor

LGA52

Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Contextual Info: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage

FBGA63

Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface

NAND512R3A2D

Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

JESD97

Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
Contextual Info: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage