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    TC4511BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet
    54185AJ/B
    		Rochester Electronics LLC 54185A - Binary to BCD Converters PDF Buy
    54L42DM
    		Rochester Electronics LLC 54L42 - BCD to Decimal Decoders PDF Buy
    54184J/B
    		Rochester Electronics LLC 54184 - BCD to Binary Converters PDF Buy
    74184N
    		Rochester Electronics LLC 74184 - BCD to Binary Converters PDF Buy

    ALPHA&OMEGA DATE CODE Datasheets Context Search

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    AOL1422

    Abstract: LTD15PD
    Contextual Info: AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1422 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is ESD protected and it is suitable for use in load switching and general


    Original     		AOL1422 AOL1422 LTD15PD PDF

    AOL1446

    Contextual Info: AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOL1446 AOL1446 PDF

    AOL1426

    Contextual Info: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		AOL1426 AOL1426 PDF

    AOL1418

    Contextual Info: AOL1418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1418 uses advanced trench technology to provide excellent R DS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOL1418 AOL1418 PDF

    AOL1420

    Contextual Info: AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.


    Original     		AOL1420 AOL1420 PDF

    aol1412

    Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOL1412 AOL1412 PDF

    AOL1702

    Abstract: SRFE
    Contextual Info: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOL1702 AOL1702 SRFE PDF

    AOL1708

    Abstract: SRFE Single N-channel Trench MOSFET 30V, 100.0A
    Contextual Info: AOL1708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use


    Original     		AOL1708 AOL1708 SRFE Single N-channel Trench MOSFET 30V, 100.0A PDF

    IG 2200 19 00001

    Abstract: AOL1413
    Contextual Info: AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		AOL1413 AOL1413 IG 2200 19 00001 PDF

    AOL1424

    Contextual Info: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


    Original     		AOL1424 AOL1424 PDF

    T 4512 H diode

    Abstract: AOL1700 SRFE
    Contextual Info: AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		AOL1700 AOL1700 T 4512 H diode SRFE PDF

    AOL1712

    Contextual Info: AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		AOL1712 AOL1712 PDF

    Contextual Info: AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power


    Original     		AOL1436 AOL1436 PDF

    Contextual Info: AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOL1414 AOL1414 PDF

    Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AOL1412 AOL1412 PDF

    aol1432

    Contextual Info: AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOL1432 AOL1432 PDF

    Contextual Info: AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD


    Original     		AOL1424 AOL1424 PDF

    Contextual Info: AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is


    Original     		AOL1401 AOL1401 PDF

    AOL1408

    Contextual Info: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		AOL1408 AOL1408 PDF

    AOL1436

    Contextual Info: AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power


    Original     		AOL1436 AOL1436 PDF

    AOL1444

    Contextual Info: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		AOL1444 AOL1444 PDF

    Contextual Info: AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		AOL1414 AOL1414 PDF

    AOL1440

    Contextual Info: AOL1440 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AOL1440 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a low side switch in CPU core power


    Original     		AOL1440 AOL1440 PDF

    AOL1413

    Abstract: Transistor EAR - 3
    Contextual Info: AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		AOL1413 AOL1413 CurrenL1413 Transistor EAR - 3 PDF