ALL TYPES OF THYRISTORS Search Results

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2N1595

Abstract: 2N1599 2N15
Contextual Info: TYPES 2N1595 THRU 2N1599 P-N-P-N DIFFUSED SILICON REVERSE-BLOCKING TRIODE THYRISTORS REPLACES B U L L E T IN *mechanical data N O . D L -S ALL JEOEC TO-S DIMENSIONS AND NOTES ARE APPLICABLE. o 100 M IN DETAILS OF OUTLINE IN THIS ZOMC OPTIONAL ALL DIMENSIONS ARE

AL 2450 dv

Abstract: ST083S
Contextual Info: Bulletin I25185 rev. C 03/03 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 85A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

333S

Abstract: ST333S
Contextual Info: Bulletin I25171 rev. D 03/03 ST333S SERIES INVERTER GRADE THYRISTORS Stud Version Features Center amplifying gate 330A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

Contextual Info: Bulletin I25171 rev. D 03/03 ST333S SERIES INVERTER GRADE THYRISTORS Stud Version Features Center amplifying gate 330A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

303S

Abstract: ST303S
Contextual Info: Bulletin I25173 rev. C 03/03 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 300A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

IRF 4310

Abstract: 183S ST183S
Contextual Info: Bulletin I25179 rev. D 03/03 ST183S SERIES INVERTER GRADE THYRISTORS Stud Version Features Center amplifying gate 195A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

Contextual Info: Bulletin I25179 rev. D 03/03 ST183S SERIES INVERTER GRADE THYRISTORS Stud Version Features Center amplifying gate 195A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

303S

Abstract: ST303S
Contextual Info: Bulletin I25173 rev. C 03/03 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 300A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

Contextual Info: Bulletin I25173 rev. C 03/03 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 300A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

AL 2450 dv

Contextual Info: Bulletin I25185 rev. C 03/03 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 85A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

183S

Abstract: ST183S
Contextual Info: Bulletin I25179 rev. D 03/03 ST183S SERIES INVERTER GRADE THYRISTORS Stud Version Features Center amplifying gate 195A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

333S

Abstract: ST333S UNF-2A
Contextual Info: Bulletin I25171 rev. D 03/03 ST333S SERIES INVERTER GRADE THYRISTORS Stud Version Features Center amplifying gate 330A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters

2N5807

Abstract: 2N5806 thyristor TAG 20 600 2N5809 2N5808 KS 300 A TRIODE thyristors 2N58 thyristor tag 83 thyristor circuit 1970 lm 4221 ii
Contextual Info: M IL-S-19500/U6 20 Augngt 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRIODE THYRISTOR BI-DIRECTIONAL ,SILICON, TYPES 2N58CS THROUGH 2N5S'09 This specification Is mandatory for use by all D epart­ ments and Agencies of the Department of Defense. I.

z0107ma equivalent

Abstract: z0103ma equivalent Z0107MA Z0103MA
Contextual Info: Z0103MA, Z0107MA, Z0109MA Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in

z0103ma equivalent

Abstract: z0109ma equivalent z0107ma equivalent Z0103MA Z0107MA triac Z0103ma triac Z01 1N4007 1N914 AN1048
Contextual Info: Z0103MA, Z0107MA, Z0109MA Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in

z0103ma equivalent

Abstract: Z0103MA z0109ma equivalent
Contextual Info: Z0103MA, Z0107MA, Z0109MA Preferred Device Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in

MAC97A

Abstract: MAC-97 MAC97A8 MAC974 MAC976 MAC97 MAC978 MAC97-6 MAC97-8 MAC97A6
Contextual Info: MAC97… Silicon Bidirectional Triode Thyristors MT2 G MT1 1.MT1 2.G 3. MT2 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings TJ=25°C unless otherwise noted. Rating Symbol Value Unit VDRM 200 V Peak Repetitive Off-state Voltage(Gate Open, TJ=-40 to

z0103ma equivalent

Abstract: triac Z0103ma z0109ma equivalent Z0103MA
Contextual Info: Z0103MA, Z0107MA, Z0109MA Preferred Device Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in

MAC97

Abstract: MAC-97 MAC97A8 MAC97A4 equivalent MAC97A4 MAC97A6 MAC97A6 equivalent MAC97-4 MAC97-6 MAC97-8
Contextual Info: MAC97… Silicon Bidirectional Triode Thyristors MT2 G MT1 1.MT1 2.G 3. MT2 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings TJ = 25 C unless otherwise noted. O Parameter Symbol Value Unit VDRM 200 400 600 V IT(RMS) 0.8 A ITSM 8 A I2t

Contextual Info: DIGITRON SEMICONDUCTORS 2N6342-2N6349 SILICON BIDIRECTIONAL TRIODE THYRISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.