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    ALL K3667 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10140957-101LF
    		Amphenol Communications Solutions VerIO™ Connector, Input Output Connectors, BulkHead Receptacle for all Interfaces PDF
    L17DAFRB15P
    		Amphenol Communications Solutions Dsub, Stamped Signal 3A, Straight IDC Flat ribbon, All plastic shell, 15 Pin, Flash Gold, 3.05mm (0.120in) Clear Hole PDF
    L17DCFRB37S
    		Amphenol Communications Solutions Dsub, Stamped Signal 3A, Straight IDC Flat ribbon, All plastic shell, 37 Socket, Flash Gold, 3.05mm (0.120in) Clear Hole PDF
    L17DCFRB37P
    		Amphenol Communications Solutions Dsub, Stamped Signal 3A, Straight IDC Flat ribbon, All plastic shell, 37 Pin, Flash Gold, 3.05mm (0.120in) Clear Hole PDF
    L117DEFRB09S
    		Amphenol Communications Solutions Dsub, Stamped Signal 3A, Straight IDC Flat ribbon, All plastic shell, 09 Socket, 0.38m (15 in) Gold, 3.05mm (0.120in) Clear Hole PDF

    ALL K3667 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667 PDF

    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 K366 2SK3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 2SK3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667 PDF

    K3667

    Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent PDF