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    ALL K3667 Search Results

    ALL K3667 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    OPA196IDGKR
    		Texas Instruments 36V, Low Power, All-Purpose Amplifier with MUX-Friendly Input 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    OPA2196IDGKT
    		Texas Instruments 36V, Low Power, All-Purpose Amplifier with MUX-Friendly Input 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    OPA2196IDGKR
    		Texas Instruments 36V, Low Power, All-Purpose Amplifier with MUX-Friendly Input 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    OPA196IDGKT
    		Texas Instruments 36V, Low Power, All-Purpose Amplifier with MUX-Friendly Input 8-VSSOP -40 to 125 Visit Texas Instruments Buy

    ALL K3667 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667 PDF

    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 K366 2SK3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 2SK3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667 PDF

    K3667

    Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent PDF