ALL GATE IC DATA 74 Search Results

Contextual Info: INTERNATIONAL C M O S 37E D 4040707 0 0 0 0 3 3 e ö T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8 CMOS Programmable Electrically Erasable Logic Device Features A rchitectural F lexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins

18CV825

Contextual Info: ET , INC. PEEL 18CV8-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — Independent configurable I/O macro cells — Synchronous preset, asynchronous clear

HC367

Contextual Info: [ /Title CD74 HC367 , CD74 HCT36 7, CD74 HC368 , CD74 HCT36 8 /Subject (High Speed CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Data sheet acquired from Harris Semiconductor SCHS181B November 1997 - Revised April 2002 High Speed CMOS Logic Hex Buffer/Line Driver,

Contextual Info: [ /Title CD74 HC73, CD74 HCT73 /Subject (Dual J-K FlipFlop CD54/74HC73, CD74HCT73 Data sheet acquired from Harris Semiconductor SCHS134C Dual J-K Flip-Flop with Reset Negative-Edge Trigger February 1998 - Revised January 2003 Features Description • Hysteresis on Clock Inputs for Improved Noise

RJH30H1

Contextual Info: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.

Contextual Info: Preliminary Datasheet RJH60F6DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package

SKE 1G

Abstract: 74VCXH162245 VCXH162245 74VCXH162245T TSSOP48 xa411
Contextual Info: 7/ 74 VCXH162245 LOW VOLTAGE CMOS 16-BIT BUS TRANSCEIVER 3-STATE WITH 3.6V TOLERANT INPUTS AND OUTPUTS . 3.6VTOLERANT INPUTS AND OUTPUTS . HIGH SPEED A OUTPUTS: tpD = 3.4 ns (MAX.) at Vcc = 3.0 to 3.6V tpD = 4.3 ns (MAX.) at Vcc = 2.3 to 2.7V - SYMMETRICAL IMPEDANCE A OUTPUTS:

Contextual Info: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C

Contextual Info: [ /Title CD54H C30, CD74H C30, CD74H CT30 /Subject (High Speed CMOS Logic 8- CD54/74HC30, CD54/74HCT30 Data sheet acquired from Harris Semiconductor SCHS121D High Speed CMOS Logic 8-Input NAND Gate August 1997 - Revised September 2003 Features Description

Contextual Info: W hoI H EW LETT m LtiM PA CK A RD 2.0 Amp Gate Drive Optocoupler w ith Integrated Vce D esaturation D etection and Fault Status Feedback Technical Data Features • Drive IGBTs up to Ic = 150 A, VCE = 1200 V • Optically Isolated, FAULT Status Feedback

FMC7G30US60

Contextual Info: IGBT FMC7G30US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

DIM200WKS12-A000

Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5969-3.0 June 2004 KEY PARAMETERS

G023

Abstract: omap 4460 multiphase snubber RC snubber mosfet design SLUP100
Contextual Info: CSD86350Q5D SLPS223E – MAY 2010 – REVISED OCTOBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86350Q5D NexFET™ power block is an optimized design for synchronous buck applications

hv9911

Abstract: cs mosfet gain 16.5 hv9911n HV99 746P AN-H55
Contextual Info: HV9911 Switch-Mode LED Driver IC with High Current Accuracy Features ► Switch mode controller for single switch drivers ♦ Buck ♦ Boost ♦ Buck-boost ♦ SEPIC ► Works with high side current sensing ► Closed loop control of output current ► High PWM dimming ratio

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS 7470/7471 Group S IN G LE -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION The 7470/7471 group is a single-chip microcomputer de­ signed with CMOS silicon gate technology. It is housed in a 32-pin shrink plastic molded DIP. The M37471M2XXXSP/FP is a single-chip microcomputer designed with

IRGP4085

Contextual Info: PD - 97286 IRGP4085DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability

Contextual Info: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NOR GATE WITH 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 4 0 ° C to +85°C

schematic diagram 48V telecom ups

Abstract: 1gm smd 850-984 smd microswitch Loctite 243 Circuit diagram of 12v 10W LED drive rectifier ckt RESISTOR SMD 3R3 ORing fet 48v 5a 12volt dc to 24 volt dc converter schematic
Contextual Info: Computing & Communications SBU - AC-DC Applications Group 1 Kim Seng Promenade, #10-01, Great World City East Tower, Singapore IR5001 Universal ORing Controller IRAC5001-HS48V Demo Board User’s Guide Rev. 1.1 25 July 2005 Rev1.1 07/25/2005 International Rectifier

Contextual Info: 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages Extended commercial range of - 40° C to +85° C

74ACT245

Abstract: 74ACT245B 74ACT245M 74ACT245MTR 74ACT245TTR DIP-20
Contextual Info: 74ACT245 OCTAL BUS TRANSCEIVER WITH 3 STATE OUTPUTS NON INVERTED • ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 5.4ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS VIH = 2V (MIN.), V IL = 0.8V (MAX.)

74VHC245

Abstract: 74VHC245M 74VHC245T
Contextual Info: 74VHC245  OCTAL BUS TRANSCEIVER 3-STATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.0 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON CONTROL

pin diagram of general igbt

Abstract: IGBT desaturation 74HC04 F-100 M57962K PS2501 desaturation design 600v 400a IGBT driver 5A IGBT driver IC
Contextual Info: M57962K Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Hybrid Integrated Circuit For Driving IGBT Modules Outline Drawing 51 MAX 27 MAX 0.25+0.2/-0.1 4.5p1.5 3 MAX 0.5+0.15/-0.1 6.5 MAX 2.54 14 1 12.5 MAX 7.5 MAX 10 MAX Block Diagram

Contextual Info: [ /Title CD74 HC73, CD74 HCT73 /Subject (Dual J-K FlipFlop CD54/74HC73, CD74HCT73 Data sheet acquired from Harris Semiconductor SCHS134C Dual J-K Flip-Flop with Reset Negative-Edge Trigger February 1998 - Revised January 2003 Features Description • Hysteresis on Clock Inputs for Improved Noise

Contextual Info: 3.3V CMOS SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range o f - 4 0 ° C to + 8 5 °C