ALGORITHM Search Results

Contextual Info: SN74BCT2160 8K X 4 2-WAY CACHE ADDRESS COWIPARATOR/DATA RAM D 3512, JU NE 1990 FM PACKAGE TOP VIEW LO ^ n w r o < < < < < < Fast Address to Match Time . . . 12 ns Max 2-Way Architecture Significantly Improves Hit Rate 4 * Implements LRU Replacement Algorithm

DSP signaklara

Abstract: BR261W26 WLCSP-30 electret mems microphone preamplifier 30-ball BR261W26A101E1G 021V0 voice usage to charge mobile phones block diagram digital mems microphone analog mems microphone preamplifier
Contextual Info: BelaSigna R261 Advanced Noise Reduction Solution for Voice Capture Devices Introduction • • • • • • • • • • • • Advanced Two−Microphone Noise Reduction Algorithm Preserves Voice Naturalness Supports Close−Talk, Far−Talk and Custom Mode

BRT35X35BM

Abstract: QS18VP6LLP BRT51X51BM qs18vn6llpq5 BRT-35X35BM QS18VN6LLP
Contextual Info: WORLD BEAM QS18LLP Series Minature Polarized Retroreflective Laser Sensors Features • • • • • • • • • Visible Class 1 laser Narrow effective beam provides small-object detection and precise position control Crosstalk rejection algorithm protects against optical disturbance from adjacent sensors

echo mixer circuit

Abstract: echo mixer circuit diagram DATASHEET OF IC 741 HT8665 LM324 LM386 audio echo ic
Contextual Info: HT8665 Talking Back with Echo Features • • • • • Operating voltage: 4.5V~5.5V ADM algorithm Auto playback with an echo effect DRAM options: – 64K – 256K Sampling rate options: – 32Kbps bits per second – 16Kbps • • • • • • •

DIGITAL ECHO IC HT8970

Abstract: HT8970 30655 echo sound processors PCB SURROUND
Contextual Info: HT8970 Voice Echo Features • · · · Operating voltage: 4.5V~5.5V ADM algorithm Low noise - Echo mode:-85dB - Surround mode:-90dB Low distortion rate - Echo mode: 1% - Surround mode: 0.2% · · · Built-in 20Kb SRAM Automatic reset function Package type: 16-pin DIP/SOP

ICL6551

Abstract: 12v center tap transformer zvs flyback driver flyback 200w AN1002 HIP2100 ISL6550 ISL6551 ISL6551IB ISL6551IB-T
Contextual Info: ISL6551 Data Sheet April 2002 FN9066 ZVS Full Bridge PWM Controller Features The ISL6551 is a zero voltage switching ZVS full-bridge PWM controller designed for isolated power systems. This part implements a unique control algorithm, rather than the traditional phase-shifted control technique, for ZVS, fixed

two 7 Segment Displays 0-59

Abstract: lpgc
Contextual Info: SEDI766 160 SEGMENT DRIVER WITH GRAY SCALE • DESCRIPTION The SED1766 is a 160-bit output LCD segment column driver for driving high-capacity LCD panels at duty cycles higher than 1/100 (up to 1/500). The LSI uses a PWM (Pulse Width Modulation) algorithm to achieve

Teltone

Abstract: Teltone M-949 Teltone M957 teltone m949
Contextual Info: Application Notes The following application notes are currently available onTeltone’s web site: Application Note #01 Applications for the M-980 Call Progress Tone Detector Application Note #02 An algorithm for call progress following with the M-980 Application Note #03

DVC5

Abstract: 8X8 INC
Contextual Info: Product Brochure for JADE 8/97 Joint Audio Decoder Encoder PSB 7280 The PSB 7280 is a device which implements voice compression algorithms defined in the ITU-TS G.711, G.722 and the G.728 Recommendation. It fits best into every application where audiocompression is needed.

67201A

Contextual Info: T em ic M67201A/M67202A S e m i c o n d u c t o r s 512 x 9 & 1 K x 9 CMOS Parallel FIFO Introduction T he M 67201A /202A im plem ent a first-in first-out algorithm , featuring asynchronous read/w rite operations. T he FU LL and E M PTY flags prevent data overflow and

FS2000A

Contextual Info: FS2000A Ð Updating the Programmer Firmware Overview This programmer features upgradable firmware technology which allows the actual control code within the programmer to be updated in the field. Upgrading the programmer firmware allows new features, new device algorithms and bug corrections to be added to the product in the future by means of a

BQ2031

Contextual Info: bq2031 Lead-Acid Fast-Charge IC Features - ➤ Conforms to battery manufacturers' charge recommendations for cyclic and float charge Ideal for high-efficiency switch-mode power conversion - Configurable for linear or gated current use ➤ Pin-selectable charge algorithms

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

bq2031

Abstract: lead acid battery monitoring chip th02 CNFG2031 bq2031 lead acid Charger bq2031 application
Contextual Info: bq2031 Lead-Acid Fast-Charge IC Features - ➤ Conforms to battery manufacturers' charge recommendations for cyclic and float charge Ideal for high-efficiency switch-mode power conversion - Configurable for linear or gated current use ➤ Pin-selectable charge algorithms

1N914

Abstract: M27256 LABLES INFORMATION
Contextual Info: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

29f1008

Abstract: 29f100
Contextual Info: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

28F020A

Abstract: 28F020T
Contextual Info: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current

AM29F01OA-45

Contextual Info: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically

Am29F010 Rev. A

Contextual Info: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write

MC34118L

Abstract: MC34118 application note MC34118L-S28 mc34118 MC34118G-S28-R MC34118-D28-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MC34118 LINEAR INTEGRATED CIRCUIT VOICE SWITCHED SPEAKER-PHONE CIRCUIT „ DESCRIPTION As a voice switched speaker-phone integrated circuit, the UTC MC34118 includes the necessary amplifiers, attenuators, level detectors and control algorithm.

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read