AKD N AD Search Results

03010

Contextual Info: A N A D I G I C S PART N U M B E R S Y S T E M AAA BBBB CC D I_ Grade/Screening Level Package Style Product Part Number Product Family AAA - Product Family ALD - Anadigics Laser Driver ATA - Anadigics Transimpedance Amplifier AKD - Anadigics Ku-Band Downconverter

MHQ3798

Abstract: 2N3798 2N3799 MHQ3799 QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR AMPLIFIER
Contextual Info: MHQ3798 silicon MHQ3799 QUAD DUAL-IN-LINE PNP HERMETIC SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed fo r low-level, low-noise am plifier applications. • Low DC Current Gain Specified — 10 /uAdc to 10 m Adc

Contextual Info: <://3: ?=@=5EFC9 <=;< BAH9C C9>5J :PL\]ZP[ g g g g g g g g g g g ,HKD 3Nlx +oqrsou G 8 9 ,HKD 3Nlx rnnonrvn ,HKD 3Nlx ~6~nwnnpnqsnuo 7A@E57E 85E5 7A=> ~NMS@BS @QQ@MFDLDMS o|j o}j o~ ~NMS@BS L@SDQH@K on| psn;|~mqn;*~ rrn;|~ m ops;*~ 2@Wl RVHSBGHMF BTQQDMS on|

RNS-D

Abstract: LBGH
Contextual Info: V,yujwj}rxw dx dn{vrwxuxpRwm X~rmnurwn| _o bnuj- `{nojln 9?= Tqjy}n{ H dqn Sj|rl dn{vrwxuxp- _o bnuj-| 9?> 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?> 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9? :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?@ ;5 W`edsx Eooqnu`k

S2859

Abstract: ami s2859 Weighted resistor ladder S2860
Contextual Info: 1 S2860 AMERICAN MICROSYSTEMS, INC.I DTMF TONE GENERATOR Features Z Z L * Z Z Z Z Optimized for Constant Operating Supply Voltages, Typically 3.5V Tone Amplitude Stability is W ithin ±1.3 dB of Nominal Over Operating Tem perature Range Low Power CMOS Circuitry Allows Device

Contextual Info: V-zvkxk~syx dy do|wsxyvyq. Rxn X*snovsxo} _p bovk. `|opkmo 9?; Trkz~o| H dro Sk}sm do|wsxyvyq. _p bovk.} 9?< 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?< 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9?= :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?> ;5 W`edsx Eooqnu`k

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.I DTMF TONE GENERATOR Features General Description Z The S2860 Digital Tone Generator is specifically designed to implement a dual tone telephone dialing system in applications requiring fixed supply operation and high stability tone output level, making it well

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.| DTMF TONE GENERATOR Features □ O ptim ized for C o n stan t O perating Supply V oltages, Typically 3.5V □ Tone A m plitude S tab ility is W ithin ± 1.3 dB of N om inal O ver O perating T em perature R ange □ Low Pow er CM OS C ircu itry A llow s Device

MJE2901

Abstract: mje2801 TO-225AB
Contextual Info: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS

MHQ6100

Abstract: MHQ6100A ADE 352 2N3798 2N930
Contextual Info: MHQ6100 SILICON MHQ6100A QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS QUAD DUAL-IN-LINE SILICON COMPLEMENTARY PAIR TRANSISTORS . designed fo r complem entary circuits where low-level, low-noise am plification is required. •

2N3725

Abstract: MHQ4001A MHQ4002A MHQ-40 4001A mhq4001
Contextual Info: MHQ4001A silicon MHQ4002A QUAD D U A L IN L IN E ' NPN HERMETIC SILICON ANNULAR MEMORY DRIVER TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON MEMORY DRIVER TRANSISTORS . . . designed for high current, high speed switching, ferrite core and plated wire memory driver, and MOS translator applications.

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

Contextual Info: /IN G M ADE IN T H IR D A NGLE P R O JE C T IO N C o p y r ig h t 1 9 ?8 by AMP In c o r p o ra te d , H a r r is b u r g , P a . A l l I n te r n a tio n a l R ig h ts R e s e r v e d . AMP In c o rp o ra te d PRO O U C TS C O V ER E D B Y U . S . AND

MPQ3762

Abstract: it 051 1N916 2N3762 tup pnp transistor
Contextual Info: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc

Contextual Info: HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-480 E Z 6th. Edition June 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 7 8

2C5660

Abstract: 2C5661 2C5662 2C5663
Contextual Info: b û S b n i QOOCHIS IPPC 2 Amp, 300V, Transistor T-33-OÌ FEATURES CHIP TYPE: AN • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 8 Mils Nominal

2N3798

Abstract: 2N3799 MPQ3798 MPQ3799 RNW transistor
Contextual Info: MPQ3798 silicon MPQ3799 QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low-noise amplifier applications. • DC Current Gain Specified - 10/jA dc to 10 mAdc h fE = 1^0 (Min) @ lc = 500 jjAdc — MPQ3798

Contextual Info: Tanceram Chip C a p a c ito rs RoHS TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because Tanceram® capacitors exhibit extremely low ESR, equivalent circuit performance can often

2N5189

Abstract: MM5189 75 watt npn switching transistor
Contextual Info: M M 5 1 8 9 s i l i c o n NPN SILICON ANNULAR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR TRANSISTOR . . . designed for use in high-current, high speed switching, and core driver applications. • • Collector-Emitter Breakdown Voltage —

MHQ3467

Abstract: 2N3467
Contextual Info: MHQ3467 silicon QUAD D UAL-IN-LIN E PNP HERMETIC SILICON ANNULAR M EM ORY D R IV E R TRANSISTORS QUAD D UAL-IN-LIN E PNP SILICON M EM ORY DRIVE R TRANSISTORS . . . designed fo r m edium -current, high-speed switching, ferrite core and plated w ire mem ory driver, and MOS translator applications.

Contextual Info: T H IS DRAWING COPYRIGHT I S UNPUBL I S H ED . R E L E A S E D FOR P U B I IC AT I ON 15 BY AMP I NCO RPO RAT ED. LOC R IGHT S R E S E R V E D . 57 . 8 1 32 . I ALL d 0 0 CARD R E V 15 1 O N S 14 AD T ì DI S T LTR p D E S C R I PT IO N RELEASED, A REVISED

Contextual Info: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

2N3419

Abstract: 2N3420 2N3421 2N3418 Unitrode transistors data To5 2N3416 JANTXV2N3418 JANTXV2N3419 2n3418-2n3421 N3421
Contextual Info: POWER TRANSISTORS JAN, JANTX, JAN, JANTX, JAN, JANTX, JAN, JANTX, 3 Amp, 80V, Planar NPN & JANTXV 2N3418 & JANTXV 2N3419 & JANTXV 2N3420 & JANTXV 2N3421 FEATURES DESCRIPTION • M e e t s M IL -S -1 9 5 0 0 / 3 9 3 U n it r o d e p o w e r t r a n s is t o r s p r o v id e a u n iq u e

MM5262

Contextual Info: M M 5262 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR . . . designed fo r use in high -current, high-speed c u rre n t s w itchin g and core d riv e r a pp lications. • C o lle c to r-E m itte r B reakd ow n V oltage —