AKD N AD Search Results

03010

Contextual Info: A N A D I G I C S PART N U M B E R S Y S T E M AAA BBBB CC D I_ Grade/Screening Level Package Style Product Part Number Product Family AAA - Product Family ALD - Anadigics Laser Driver ATA - Anadigics Transimpedance Amplifier AKD - Anadigics Ku-Band Downconverter

A 4503 ic

Abstract: ic a 4503 8 PIN ic a 4503 AK4504 ak4503 digital audio amp circuit diagram digital clock circuit diagram 4503 ic A 4503 ic for power supply AKD4318
Contextual Info: K4 löbit Stereo A I ADC & DAC 1 chip Stereo A/D, D/A Converter @ 4th Order Delta-Sigma Stereo ADC • 64x Over sampling • On-Chip Digital Anti-Alias Filtering • S/N: 90dB 4th Order Delta-Sigma Stereo DAC • 64x Over sampling • On-Chip 8x interpolation Filter

ad1172

Abstract: MRA1300-10L C71537
Contextual Info: Order this data sheet by MRA1300-10L/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line M icrow ave Linear Pow er Transistor 8.0 dB 1300-1400 MHz 10 WATTS MICROWAVE LINEAR POWER TRANSISTOR . . . designed prim arily for w ideband, large-signal output and driver am plifier stages in

Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET

MHQ3798

Abstract: 2N3798 2N3799 MHQ3799 QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR AMPLIFIER
Contextual Info: MHQ3798 silicon MHQ3799 QUAD DUAL-IN-LINE PNP HERMETIC SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed fo r low-level, low-noise am plifier applications. • Low DC Current Gain Specified — 10 /uAdc to 10 m Adc

MMIC Downconverter ku band

Abstract: akd n ad 1 to 3 GHz bandpass filter wide band Universal lnb ku astra microwave TRIPLE BAND COMBINER K78210633
Contextual Info: APPLICATION NOTE - AKD Triple Band AKD Series Ku Band MMIC Downconverters Triple Band Applications Rev 4 INTRODUCTION The AKD 2806 is ideal for applications where a single LN B has to cover two R F bands: 10.7 - 1 1 . 7 G H z and 11.7 - 12.75 GHz. For band switching applications, such as Astra Universal and

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RNS-D

Abstract: LBGH
Contextual Info: V,yujwj}rxw dx dn{vrwxuxpRwm X~rmnurwn| _o bnuj- `{nojln 9?= Tqjy}n{ H dqn Sj|rl dn{vrwxuxp- _o bnuj-| 9?> 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?> 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9? :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?@ ;5 W`edsx Eooqnu`k

akd n ad

Contextual Info: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-563 Target Specification 1st. Edition Features • Low on-resistarice R ds = 0.010 £2 typ. • H igh speed sw itching • 4V gate drive device can be driven from 5V source

MSM4049

Abstract: X-TAL 3.579545 Mhz M6234 MSM6234 MSM6234RS 50k200k
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: 2SK2373 Silicon N-Channel MOS FET HITACHI ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch

MSM4049

Abstract: MSM6234 MSM6234RS 3.579545MHZ M6234
Contextual Info: J2A0022-16-92 ¡ 電子デバイス 作成：1998年 1月 MSM6234l 前回作成：1996年 9月 MSM6234 DTMF信号発生用LSI n 概要 MSM6234は押ボタンダイヤル電話機に使用するDTMF（Dual Tone Multi-Frequency）信号発生用 CMOS LSIです。

S2859

Abstract: ami s2859 Weighted resistor ladder S2860
Contextual Info: 1 S2860 AMERICAN MICROSYSTEMS, INC.I DTMF TONE GENERATOR Features Z Z L * Z Z Z Z Optimized for Constant Operating Supply Voltages, Typically 3.5V Tone Amplitude Stability is W ithin ±1.3 dB of Nominal Over Operating Tem perature Range Low Power CMOS Circuitry Allows Device

2N3904

Abstract: N3904 2N3903 MOTOROLA 2N3903 2N3904V
Contextual Info: M AXIM UM RATINGS Rating Symbol V a lu e Collecto r-Em itter Voltage v CEO 40 Vdc Co llecto r-Base Voltge VcBO 60 Vdc Em itter-Base V o ltage v EBO 6.0 Vdc 'c 200 m Adc Pd 625 5.0 m wrc Pd 1.5 12 W atts m W "C T J . T stg - 5 5 to + 150 X Symbol C o llector Curren t — C o ntinuo us

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.I DTMF TONE GENERATOR Features General Description Z The S2860 Digital Tone Generator is specifically designed to implement a dual tone telephone dialing system in applications requiring fixed supply operation and high stability tone output level, making it well

MK5089

Abstract: S25089 Mostek MK5089
Contextual Info: GOULD INC/ GOULD A M I MDE D • MQSSTlb 0012am S ■AM I 'T - lS - Z l- 0 & ■> GOULD DTNIF Tone Generator Semiconductors S25089 Features General Description □ Wide Operating Voltage Range: 2.5 to 10 Volts □ Optimized for Constant Operating Supply Voltages,

28tc4

Contextual Info: Semi-Custom & Custom Solutions FEA T U R ES O F C ALOG IC SEM I-C U STO M C APAB ILITIES C alogic designs and m anufactures S em i-C ustom and C ustom B ipolar Ju nctio n Isolated J l and D ielectrically Isolated (D l) prod u cts. SPICE m odels, layout,

transistor P2D

Abstract: SOT-223 AKD AKD SOT223
Contextual Info: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit v CEO -3 0 0 V dc C o lle cto r-B a se V oltage v CBO -3 0 0 V dc E m itter-B ase V oltage v EBO - 5.0 Vdc 'C -5 0 0 m A dc C o lle cto r-E m itte r Voltage C o lle cto r C urrent

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.| DTMF TONE GENERATOR Features □ O ptim ized for C o n stan t O perating Supply V oltages, Typically 3.5V □ Tone A m plitude S tab ility is W ithin ± 1.3 dB of N om inal O ver O perating T em perature R ange □ Low Pow er CM OS C ircu itry A llow s Device

MJE2901

Abstract: mje2801 TO-225AB
Contextual Info: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit Co llecto r-Em itter Vo ltage v C EO -3 5 Vdc C o llecto r-B ase Voltage v C BO -40 Vdc E m itter-B ase Voltage v EB O -2 5 Vdc 'c -1 5 0 m A dc C o llecto r Curren t — C o n tin u o u s MMBT404ALT1* CASE 318-07, STYLE 6

ca3083

Abstract: ca301b
Contextual Info: CA3083 2 H A R R IS G e n e r a l - P u r p o s e H ig h -C u r r e n t N - P -N T r a n s i s t o r Array August 1991 F e a tu re s D e s c rip tio n • High lc .100mA Max The CA3083 Is a versatile array of five high-current to

LR4089B

Abstract: LR4089BN 12 Mhz in crystal oscillator LR4089 18-PIN sine wave inverter circuit diagram DTMF telephone Scans-00145149 LM 941
Contextual Info: SHARP LR4089B/ LR4089BN LR4089B/LR4089BN Tone Dialer LSI DESCRIPTION PIN CONNECTIONS FEATURES • Tone output : bipolar Mute output : N-channel open-drain • Uses either a standard 2-of-8 matrix keyboard or a single contact keyboard • Uses a 3.579 545 HMz color-burst crystal oscil­

6568A

Contextual Info: Symbol Value Unit C ollecto r-Em itter V o ltage Rating V C EO 20 Vdc C o llecto r-Base V o ltage VCBO 20 Vdc v ebo 3.0 Vdc 50 m A dc Em itter-Base Vo ltage Co llecto r C u rren t — C o n tin u o u s >c T otal D evice D issip a tio n w T ^ = 25°C D erate ab o ve 25°C