AKD N AD Search Results

RNS-D

Abstract: LBGH
Contextual Info: V,yujwj}rxw dx dn{vrwxuxpRwm X~rmnurwn| _o bnuj- `{nojln 9?= Tqjy}n{ H dqn Sj|rl dn{vrwxuxp- _o bnuj-| 9?> 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?> 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9? :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?@ ;5 W`edsx Eooqnu`k

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.I DTMF TONE GENERATOR Features General Description Z The S2860 Digital Tone Generator is specifically designed to implement a dual tone telephone dialing system in applications requiring fixed supply operation and high stability tone output level, making it well

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.| DTMF TONE GENERATOR Features □ O ptim ized for C o n stan t O perating Supply V oltages, Typically 3.5V □ Tone A m plitude S tab ility is W ithin ± 1.3 dB of N om inal O ver O perating T em perature R ange □ Low Pow er CM OS C ircu itry A llow s Device

MJE2901

Abstract: mje2801 TO-225AB
Contextual Info: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS

MHQ6100

Abstract: MHQ6100A ADE 352 2N3798 2N930
Contextual Info: MHQ6100 SILICON MHQ6100A QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS QUAD DUAL-IN-LINE SILICON COMPLEMENTARY PAIR TRANSISTORS . designed fo r complem entary circuits where low-level, low-noise am plification is required. •

NEe jA8

Abstract: ne ja8 SN 7487 UWG8949GT UWG8949JS UWG8949JS9 UWG8949JU UWG8949JU9 UWGY8949JI UWGY8949JT
Contextual Info: p DcbbZXh^cb c[ h]Z dckZf gidd`m p OdZX^[^XVh^cbg HKEQDPHRF MNLTHJHPU OFKOLN 6OMCPPFN NFOHOPCKP PUMF7 Rncdk Jdsdbshmf chrs`mbd 9ll|87Nxrsdqdrhr uvr wsvtsw J C K Q C UWG8949JS UWGY8949JT UWGY8?4<JT UWGY:7487JT UWG8949JU UWGY8949JI UWGY8?4<JI UWGY:7487JI UWG8949JS9

Contextual Info: HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-480 E Z 6th. Edition June 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 7 8

2N3798

Abstract: 2N3799 MPQ3798 MPQ3799 RNW transistor
Contextual Info: MPQ3798 silicon MPQ3799 QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low-noise amplifier applications. • DC Current Gain Specified - 10/jA dc to 10 mAdc h fE = 1^0 (Min) @ lc = 500 jjAdc — MPQ3798

Contextual Info: Tanceram Chip C a p a c ito rs RoHS TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because Tanceram® capacitors exhibit extremely low ESR, equivalent circuit performance can often

2N5189

Abstract: MM5189 75 watt npn switching transistor
Contextual Info: M M 5 1 8 9 s i l i c o n NPN SILICON ANNULAR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR TRANSISTOR . . . designed for use in high-current, high speed switching, and core driver applications. • • Collector-Emitter Breakdown Voltage —

MHQ3467

Abstract: 2N3467
Contextual Info: MHQ3467 silicon QUAD D UAL-IN-LIN E PNP HERMETIC SILICON ANNULAR M EM ORY D R IV E R TRANSISTORS QUAD D UAL-IN-LIN E PNP SILICON M EM ORY DRIVE R TRANSISTORS . . . designed fo r m edium -current, high-speed switching, ferrite core and plated w ire mem ory driver, and MOS translator applications.

Contextual Info: T H IS DRAWING COPYRIGHT I S UNPUBL I S H ED . R E L E A S E D FOR P U B I IC AT I ON 15 BY AMP I NCO RPO RAT ED. LOC R IGHT S R E S E R V E D . 57 . 8 1 32 . I ALL d 0 0 CARD R E V 15 1 O N S 14 AD T ì DI S T LTR p D E S C R I PT IO N RELEASED, A REVISED

Contextual Info: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

MM5262

Contextual Info: M M 5262 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR . . . designed fo r use in high -current, high-speed c u rre n t s w itchin g and core d riv e r a pp lications. • C o lle c to r-E m itte r B reakd ow n V oltage —

equivalent transistor n 4212

Abstract: Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 CF-111 ferrite core TA2827 indiana general TRANSISTOR J 4310 EQUIVALENT CF-111
Contextual Info: File No. 269 RF Power T ran sisto rs Solid State Division 2N5071 2 4 -W C W , 76-MHz Em itterBallasted O verlay Transistor Silicon N-P-N Device fo r 2 4 -V o lt A p p lica tio n s in V H F C o m m un icatio ns E q u ip m en t Features: • F o r class B o r class C a m p lifie rs

A67A

Abstract: B799 39A3 BA QD
Contextual Info: :8.18 3PWI6;>L4 BD4=;>;3CDA7 :;9: @?F7A A7<3G 8KHUVSKT - Yl`kk `mc enq lhbqnv`ud nudm ;9G rvhsbghmf b`o`ahkhsx :7>NV ;>9\GI `ooqnudc ax [R rs`mc`qc >j\ hlotkrd vhsgrs`mc unks`fd 3adsvddm bnhk `mc bnms`bsr4 - VIH 2 WI k`xntsr - Kmuhqnmldms`k eqhdmckx oqnctbs 3XnNY bnlokh`ms4

DH3725

Abstract: LA 78141 2N3725 PH3725CN 14pin npn transistor
Contextual Info: D H 3725C LMS M e m o ry /C lo c k Drivers D H 3 7 2 5 C q u ad N P N c o re d riv e r general description typical c h a ra c te ris tic s The D H 3725C consists o f fo u r 2 N 3 7 2 5 ty p e NPN transistors m o un ted in a 14-pin m o lded d u a l-in -lin e

kbr-8.00m

Abstract: CSA8.00MT kbr kyocera
Contextual Info: TO SH IB A TMP47C215/415 CMOS 4-Bit Microcontroller TMP47C215N TMP47C415N The TMP47C215/415 is a high speed and high performance 4-bit single chip microcomputer, integrating high current output port and the 4 bit AD conversion input based on the TLCS-470 series.

M58620-001S

Abstract: stc 8000 h 2X15 brace electric BIB10 keyboard encoder
Contextual Info: M ITSU BISH I LSIs M58620-001S KEYBOARD ENCODER J IS CODE STANDARD PRODUCT DESCRIPTION The M 5 8 6 2 0 -0 0 1 S is a keyboard encoder fo r solid-state switches and is fabricated w ith P-channel aluminum-gate PIN CONFIGURATION (TOP VIEW ) code. A ll inputs

MJ7261

Abstract: 1N4933 MJ7260
Contextual Info: MJ7260 MJ7261 SILICON 30 AMPERE TRIPLE DIFFUSED POWER TRANSISTORS HIG H-POW ER/HIGH-VOLTAGE TRIPLE DIFFUSED NPN SILICON ANN U LA R TRANSISTORS . . . designed fo r high-frequency, line operated switching applications. • Excellent Switching Times @ l c = 5.0 Adc t on = 200 ns fT yp)

Contextual Info: 2SJ529 L ,2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-654A (Z) 2nd. Edition June 1, 1998 Features • Low on-resistance R ds(oii) = 0.12 £2 typ. • 4 V gete drive devices • High speed switching Outline D P A K -2 I I

0PB708

Abstract: B709 OP500 IOPB709 QPB708 QPB709 TRW OPB709 em 223 0PB709
Contextual Info: OPTEK TECHNOLOGY INC DbE D | b7*iflSaD O p to e le c tro n ic s D iv is io n Q | T-MI-T3 T R W Electronic Com ponents Group T R ww ftoduct Bulletin 5288 January 1985 Reflective Object Sensors Types QPB708, QPB709 .590 14.89 •025 (0.84) . 'CATH ODE LEAD. OTHER LEADS ARE .01 (1.52)

Contextual Info: Supertex inc. VP0120 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^D S ON ^D(ON) b v dgs (max) (min) TO-92 -200V 25ß -100m A V P 0 120 N 3 a tM IL visual screening available Features Advanced DMOS Technology

MC3416

Abstract: mc3416t
Contextual Info: g MC3416 M O TO R O LA S p ecification s and Applications Inform ation 4 x 4 x 2 CROSSPOINT SWITCH 4 x 4 x 2 CROSSPOINT SWITCH D IE L E C T R IC A L L Y IS O L A T E D M O N O L IT H IC T h e M C 3 4 1 6 consists o f a p a ir o f 4 x 4 m a tric e s o f d ie le c tr ic a lly