AKD N Search Results

Contextual Info: FEATURES AKD SPECIFICATIONS Features and Benefits Electrical • 8-circuit modular unit fits into same space and footprint as 24-circuit signal module ■ Sturdy male blade pins avoid bending and dissipate heat ■ Post-plated pins provide high reliability

SPR-0022A

Abstract: 4LUG JACK
Contextual Info: RED INDICATES ORIGINAI DATA CONTAINED IN TH IS DCQjtBff 15 PROPRIETARY TO THOHPGTGH ELECT R W IO INC. AKD SHALL NOT BE DISOJEH3, ΠPIHJ 03 U S D FOR POOCURSeiT OR MAMFACTUS VI1H UT EXPRESS WITTEN PERMISSION REV B P2 CDNN TYPE PL74 Al PI CONN TYPE PL75FL |

03010

Contextual Info: A N A D I G I C S PART N U M B E R S Y S T E M AAA BBBB CC D I_ Grade/Screening Level Package Style Product Part Number Product Family AAA - Product Family ALD - Anadigics Laser Driver ATA - Anadigics Transimpedance Amplifier AKD - Anadigics Ku-Band Downconverter

LA 5756

Contextual Info: m o le x FEATURES AKD SPECIFICATIONS Electrical Voltage: 250V Current: 2.5A Contact Resistance: 2 0 m Q max. Dielectric Withstanding Voltage: 500V AC Insulation Resistance: 1000 M Q min. • ■ ■ ■ ■ ■ Ribbon Cable Systems Q F 50 Features and Benefits

AK4370VN

Abstract: usb optical mouse hp R847 mini usb 10p ADK4370 AK4116 AK4370 AKD4370 AKD4370-B
Contextual Info: ASAHI KASEI [AKD4370-A] AKD4370-B Evaluation Board Rev.0 for AK4370 GENERAL DESCRIPTION The AKD4370 is an evaluation board for 24bit DAC with Headphone Amplifier, AK4370. The AKD 4370 has the interface with AKM’s ADC evaluation boards. Therefore, it’s easy to evaluate the AK4370. The

omron relay 5 pin 12V DC

Abstract: RELAY SPDT rising edge OMRON 24v relay dc 11 pin omron contactor S3D2-AK-US OMRON PROXIMITY SWITCH 5 pin relay 12vdc with NO NC omron 12v relay s3d2-akd OMRON TL-G3D
Contextual Info: Sensor Controller S3D2 Offers High-speed Input Response of 0.1 ms and Equipped with Built-in Timer • High-speed response of 0.1 ms. ■ Ideal as a two-input Controller. ■ Lineup includes the S3D2-BK with flip-flop functions convenient for level control, the S3D2-AKD/CKD/CCD with

omron 12v relay

Abstract: S3d2 OMRON TL-G3D S3D2-AK-US input output connections of omron relay S3D2-AK 6 pin relay 12vdc with NO NC inductive proximity sensor omron 12vdc OMRON PROXIMITY SWITCH
Contextual Info: Sensor Controller S3D2 Offers High-speed Input Response of 0.1 ms and Equipped with Built-in Timer • High-speed response of 0.1 ms. ■ Ideal as a two-input Controller. ■ Lineup includes the S3D2-BK with flip-flop functions convenient for level control, the S3D2-AKD/CKD/CCD with

Contextual Info: 2SK1082-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S ■ O utline D rawings • High speed sw itch in g 0J2«.' _ AE *02 cMtt /-,_2_ • Low o n-resistance • No secondary bre akd ow n T I • Low d rivin g p ow er

IN649

Abstract: BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020
Contextual Info: R ectifiers 1N645 Series • 40 0m A Rectifiers in DO-35 Package 1 M axim um A verag e R ectified C urrent P eak inve rse V olta ge M IN . (P fV ) B re akd ow n V oltage (M IN .) @ 100 |iA (B v ) ('o' Co) 25" C 150" C Forw ard V oltage Drop (V F) @ l F 4 00 m A

mosfet 2sk

Contextual Info: 2SK899 FUJI POWER MOS tFET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■ O u tlin e Drawings • High speed s w itc h in g • Low o n -re sistan ce • No secon da ry b re akd ow n • Low d riv in g p o w e r • H igh vo ltag e ■ A p plicatio ns

Contextual Info: VERY LOW Ron CAG6 CAG6-10 FET A N A L O G G A TE SPST • 6 OHM M A X . Ron • ZERO OFFSET VO LT A G E • HIGH SPEED TO— 5 Sä“ M AXIM UM R A T IN G S SYM BO L CAG6 UNITS Gate B re akd o w n V o lta g e B V gss -3 0 V C o lle c to r to Base V oltage

Contextual Info: .c ru is e *:$> ? > S >s:í ¿. iasatttìl ÿ* ? * J-î j >•' . i >.' ü .<!' h U ' . ” ! IÜ B A S E -T IN T E R F A C E M O D U L E b X i E N D E D T E M P K R A 'F U IR JE R A N C A I * m m L lg s - u l .L Y I M T E í í R a í 'E D rORADAPfER. KUÖ. AKD M0THER3ÜAÍUÍ

kd 617

Abstract: CAG7
Contextual Info: VERY LOW Ron FE T ANALO G GATE SPDT OR DPST • 6 OHM M AX. Ron • ZERO OFFSET V O LT A G E M A X I M U M R A T IN G S PARAM ETER SYM BOL Gate B re a kd o w n V o lta g e MAX. U N IT S 25 V Vr 30 V D iode B re akd o w n V o lta g e C o lle c to r-E m itte r

Contextual Info: <://3: ?=@=5EFC9 <=;< BAH9C C9>5J :PL\]ZP[ g g g g g g g g g g g ,HKD 3Nlx +oqrsou G 8 9 ,HKD 3Nlx rnnonrvn ,HKD 3Nlx ~6~nwnnpnqsnuo 7A@E57E 85E5 7A=> ~NMS@BS @QQ@MFDLDMS o|j o}j o~ ~NMS@BS L@SDQH@K on| psn;|~mqn;*~ rrn;|~ m ops;*~ 2@Wl RVHSBGHMF BTQQDMS on|

RNS-D

Abstract: LBGH
Contextual Info: V,yujwj}rxw dx dn{vrwxuxpRwm X~rmnurwn| _o bnuj- `{nojln 9?= Tqjy}n{ H dqn Sj|rl dn{vrwxuxp- _o bnuj-| 9?> 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?> 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9? :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?@ ;5 W`edsx Eooqnu`k

Contextual Info: V-zvkxk~syx dy do|wsxyvyq. Rxn X*snovsxo} _p bovk. `|opkmo 9?; Trkz~o| H dro Sk}sm do|wsxyvyq. _p bovk.} 9?< 85 Gnms`bs T`q`ldsdqr /sgd ntsots ne sgd qdk`xr0 9?< 95 Gg`q`bsdqhrshbr T`q`ldsdqr 9?= :5 Gnhk T`q`ldsdqr /sgd hmots ne sgd qdk`xr0 9?> ;5 W`edsx Eooqnu`k

S2859

Abstract: ami s2859 Weighted resistor ladder S2860
Contextual Info: 1 S2860 AMERICAN MICROSYSTEMS, INC.I DTMF TONE GENERATOR Features Z Z L * Z Z Z Z Optimized for Constant Operating Supply Voltages, Typically 3.5V Tone Amplitude Stability is W ithin ±1.3 dB of Nominal Over Operating Tem perature Range Low Power CMOS Circuitry Allows Device

13002 l

Abstract: c s 13002 TRANSISTOR transistor BR 13002
Contextual Info: M C C TO-251 Plastic-Encapsulate Transistors 3D D 13002 TRANSISTOR NPN FE A T U RE S L TO-251 P cm: 1.2 5W (Tam b=25°C ) 1 .B A S E Icm: 1 A 2 .C O L L E C T O R I M M * « * » 'voltage' V(BR)CBO: 600 V 3 . E M IT T E R 1 2 S B fftfcra tin g a n d s to r a g e ju n c t io n te m p e r a tu r e ra n g e

Contextual Info: AMI S2860 AMERICAN MICROSYSTEMS, INC.| DTMF TONE GENERATOR Features □ O ptim ized for C o n stan t O perating Supply V oltages, Typically 3.5V □ Tone A m plitude S tab ility is W ithin ± 1.3 dB of N om inal O ver O perating T em perature R ange □ Low Pow er CM OS C ircu itry A llow s Device

Contextual Info: 2SB856 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 A B 1. B a s e 2 . C o lle c to r 1 F la n g e 2 3 Absolute Maximum Ratings (Ta = 3 . E m itte r 25°C) Item Symbol Rating Collector to base voltage

2SD2105

Contextual Info: HITACHI 2SD2105— -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25ÛC Item S ym bol Rating Unit C o lle cto r to base volta ge V CB0 120 V C o lle cto r to em itter voltage VCE0 120 V E m itter to base volta ge

2SB1401

Contextual Info: HITACHI 2SB1401-Silicon PNP Triple Diffused Low Frequency Power A m plifier Absolute M ax im um Ratings Ta = 25°C Ite m S y m b o l R a tin g U n it C ollector to base volta ge VCBO -3 0 0 V C o lle cto r to em itter voltage V CE0 -3 0 0 V Em itter to base voltage

MJE2901

Abstract: mje2801 TO-225AB
Contextual Info: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS

Contextual Info: 2SD2110 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 4.5 kQ. Typ [1 500 Q. (Typ) ¿ 3 ¡t'D 2SD2110 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating