AK0102Z
|
|
AK Semiconductor
|
AK0102Z N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 2A continuous drain current, 240mΩ typical RDS(ON) at 10V VGS, and low gate charge for power switching applications. |
Original |
PDF
|
|
|
|
AK0103M
|
|
AK Semiconductor
|
AK0103M N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 3A continuous drain current, RDS(ON) less than 160mΩ at VGS=10V, and low gate charge for high-frequency switching applications. |
Original |
PDF
|
|
|
|
AK0106R
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET with 100V VDS, 6A ID, RDS(ON) less than 140mΩ at VGS=10V, low gate charge, and SOT-223-3L package for efficient power switching applications. |
Original |
PDF
|
|
|
|
AK0102B
|
|
AK Semiconductor
|
AK0102B N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 1.8A continuous drain current, and low RDS(ON) of 680mΩ at VGS=10V, suitable for power switching and high frequency applications. |
Original |
PDF
|
|
|
|
AK0106Z
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 6A continuous drain current, 140mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and high-frequency applications. |
Original |
PDF
|
|
|
|
AK0103
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 3A continuous drain current, 136mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. |
Original |
PDF
|
|
|
|
AK0102
|
|
AK Semiconductor
|
AK0102 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 2A continuous drain current, 240mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and high frequency applications. |
Original |
PDF
|
|
|
|
AK0103Y
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET AK0103Y with 100V drain-source voltage, 3A continuous drain current, 136mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
Original |
PDF
|
|
|
|
AK0108AS
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET AK0108AS with 100V drain-source voltage, 8A continuous drain current, RDS(ON) less than 28mΩ at VGS=10V, and low gate charge, suitable for DC/DC converters, telecom, and synchronous rectification applications. |
Original |
PDF
|
|
|
|
AK0104AN
|
|
AK Semiconductor
|
AK0104AN N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 4A continuous drain current, RDS(ON) less than 100mΩ at VGS=10V, and low gate charge for high-efficiency switching applications. |
Original |
PDF
|
|
|
|
AK0102M
|
|
AK Semiconductor
|
AK0102M N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 2A continuous drain current, 240mΩ maximum RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and high frequency applications. |
Original |
PDF
|
|
|
AK0102Z
