ST14C02C
Abstract: 9811V2 ST14C02 9811v
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behavior
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M14C32
Abstract: M14C64 micromodule
Contextual Info: M14C64 M14C32 Memory Card IC 64/32 Kbit Serial I Bus EEPROM 2C DATA BRIEFING • Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 32 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle
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M14C04
Abstract: M14C16
Contextual Info: M14C16 M14C04 Memory Card IC 16/4 Kbit Serial I Bus EEPROM 2C DATA BRIEFING • Hardware Write Control ■ BYTE and PAGE WRITE up to 16 Bytes ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■
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b13-b5
Abstract: AN404 M14C32 M14C64
Contextual Info: M14C64 M14C32 Memory Card IC 64/32 Kbit Serial I²C Bus EEPROM • Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 32 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing
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ST14C02C
Abstract: 9811V2
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behavior
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M14C04
Abstract: M14C16
Contextual Info: M14C16 M14C04 16K/4K SERIAL I2C BUS EEPROM DATA BRIEFING 2 2 2 2 TWO WIRE I2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME SINGLE SUPPLY VOLTAGE: – 2.5V to 5.5V for M14Cxx-W HARDWARE WRITE CONTROL
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AN404
Abstract: M14C32 M14C64
Contextual Info: M14C64 M14C32 Memory Card IC 64/32 Kbit Serial I C Bus EEPROM • Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 32 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing
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D68 package information micromodule
Abstract: MICROMODULES T4X diode uv-tape SO20 TQFP44
Contextual Info: SMARTCARD MCU Ordering Information For Package And Delivery DATA BRIEFING INTRODUCTION The manufacturing process of Smartcards involves various components and technologies in order to issue a finished product: – micromodules, – flat packages, – wafers.
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ST14C02C
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I Bus EEPROM 2C DATA BRIEFING • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing
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AN404
Abstract: M14C04 M14C16
Contextual Info: M14C16 M14C04 Memory Card IC 16/4 Kbit Serial I C Bus EEPROM Hardware Write Control • BYTE and PAGE WRITE up to 16 Bytes ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behaviour
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AN404
Abstract: M14C04 M14C16
Contextual Info: M14C16 M14C04 Memory Card IC 16/4 Kbit Serial I²C Bus EEPROM • Hardware Write Control ■ BYTE and PAGE WRITE up to 16 Bytes ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behaviour
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M14C32
Abstract: M14C32-WS21 M14C64
Contextual Info: M14C64 M14C32 64K/32K SERIAL I2C BUS EEPROM DATA BRIEFING 2 2 2 DESCRIPTION The M14C64/C32 specification covers a range of 64K/32K bit serial I2C EEPROM products respectively. The memory is an electrically erasable programmable memory EEPROM fabricated with
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