AI012 Search Results

M950x0

Abstract: EEPROM F6SP36 6512 AI123
Contextual Info: M950x0 M950x0-W M950x0-R 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with SPI bus serial interface Positive clock SPI modes ■ Single supply voltage: – 4.5 V to 5.5 V for M950x0 – 2.5 V to 5.5 V for M950x0-W

AN620

Abstract: M27C801 PDIP32 PLCC32 TSOP32 VA10
Contextual Info: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACC ESS TIME: 45 ns ■ LOW POWER CONSUMPTION: - Active Current 3 5 m A a t5 M H z - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)

M27C160

Abstract: Q15A
Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS

555 NC timer

Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS

Contextual Info: M95M01-R 1 Mbit Serial SPI bus EEPROM with high speed clock Preliminary Data Features • Compatible with SPI bus serial interface Positive Clock SPI modes ■ Single supply voltage: 1.8 V to 5.5 V ■ High speed – 5 MHz clock rate – 5 ms Write time

Contextual Info: M95512-DR M95512-R M95512-W 512 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with SPI bus serial interface Positive clock SPI modes : – M95512-W and M95512-R: standard SPI 512 Kbit EEPROM – M95512-DR: standard SPI 512 Kbit

DS1220

Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

X101

Abstract: X110
Contextual Info: Gl SGS-THOMSON ST95081 M ê i s i m ‘ïïT i3 © r a g s _ SERIAL ACCESS SPI BUS 8K (1024 x 8 EEPROM PRELIMINARY DATA 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE

M95128W

Abstract: M95128 M95128-R M95128-W
Contextual Info: M95128 M95128-W M95128-R 128 Kbit Serial SPI bus EEPROM with high speed clock Feature summary • Compatible with SPI Bus Serial Interface Positive Clock SPI Modes ■ Single Supply Voltage: – 4.5 to 5.5V for M95128 – 2.5 to 5.5V for M95128-W – 1.8 to 5.5V for M95128-R

ST10

Abstract: ST95010 ST95020 ST95040 ST9501
Contextual Info: ST95040 ST95020, ST95010 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE – 4.5V to 5.5V for ST950x0 – 2.5V to 5.5V for ST950x0W SPI BUS COMPATIBLE SERIAL INTERFACE

M27C160

Abstract: PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)

Contextual Info: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ±10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 35m Aat5M Hz - Standby Current 100|uA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|is/byte (typical)

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

Contextual Info: £jJ SGS-THOMSON 0 iMDIŒ ra(M0©S M28F410 4 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5 % o r± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

Contextual Info: 5 7 . M28F211 M28F221 SGS-THOMSON RS0 gS3 (ó ÌlLi TO©K!IQ(§i 2 Megabit (x 8, Block Erase) FLASH MEMORY PRELIMINARY DATA • SMALLSIZE PLASTIC PACKAGETSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: /T T S G S -T H O M S O N li!ilO IILi g¥K©li!!lD(gi M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3V± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA - Standby Current 50|jA

Contextual Info: M29F080A 8 Mbit 1 Mb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME - 8 jas by Byte typical ■ 16 UNIFORM 64 Kbyte MEMORY BLOCKS

Contextual Info: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES

Contextual Info: £ y j S G S 'T H O M S O N SERIAL ACCESS SPI BUS 2K 256 x 8 EEPROM l i f e 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE 2 MHz CLOCK RATE MAX BLOCK WRITE PROTECTION STATUS REGISTER

Contextual Info: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T M29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

Contextual Info: SGS-THOMSON IIIIMJì ILIì M W IIÈÌ M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10|jA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE