AI00668 Search Results

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

plcc32 pinout

Abstract: M28F101 PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

28F101

Contextual Info: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32 0625E-1
Contextual Info: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is

M28F101

Abstract: PDIP32 PLCC32 TSOP32 SRAM 10ns
Contextual Info: M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES

Contextual Info: £yjSGS-THOMSON DWIllLI DW!lll©i M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: 1Ojas typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION

Contextual Info: SGS"THOMSON ST93CS66 ST93CS67 "*J m. IffltMilUIWMDIgS SERIAL ACCESS MICROWIRE BUS 4K 256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

plcc32 pinout

Abstract: M28F101 PLCC32 TSOP32 TSOP32 Package PDIP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Erase Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

Contextual Info: EjJ SGS-THOMSON D»ILI £TMD(gi M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: lO^s typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACC ESS TIME: 70ns BYTE PROGRAMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 5|j,A typical

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

A101

Abstract: M28F101 PDIP32 PLCC32 TSOP32 JIS B 0041
Contextual Info: fZ 7 SGS-THOMSON * 7 w * M28F101 H Q ^ 0 i[ L I © r a l^ [ l( g S 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 10OpA Max - 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: ^0\ls typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ ■ ■ LOW POWER CONSUMPTION Stand-by Current: 5^A typical