AI 186 N Search Results

Contextual Info: 10 ENG. NO. 83612-9020 N A T E R IA L NO. 836129020 qpp .715 18.16 S 6 fl as TYP. - 6.78 REF. .125 - HEX. 3.18 2 PLA C E S P A N E L CUT-OUT 2-56 JAC KPO ST 715 2 PLACES ' G OF .186 MAX. .055 .41 10.A 1.A0 RECOMMENDED REF. P A N E L THICKNESS AI .050 1.27

renesas sim

Abstract: Sim card diagram
Contextual Info: APPLICATION NOTE M16C/62A Group Clock Signals in used for the SIM Interface UART 1. Abstract The following article introduces clock signals in used for the SIM Interface (UART). 2. Introduction The explanation of this issue is M16C/62A Group. REJ05B0281-0100Z/Rev.1.00

Cutler-Hammer Digitrip RMS 310 LSG 50

Abstract: Cutler-Hammer* MDL3800 Cutler-Hammer Digitrip RMS 310 Cutler-Hammer Digitrip RMS 310 rating plug MT2800 Cutler-Hammer Digitrip RMS 310 trip unit mdl3800f TA801MA Cutler-Hammer* MDL 800A mounting MDL3800
Contextual Info: PG.74A.01.T.E 061-090 Page 67 Wednesday, March 17, 1999 8:15 AM Cutler-Hammer March 1999 Molded Case Circuit Breakers 300-800 Amperes 67 Series Cா M-Frame Interrupting Capacity Ratings UL489/CSA Interrupting Capacity Ratings➀ Circuit Breaker Type Number of

JD3250F

Abstract: HJD3250F Cutler-Hammer hjd3250f Cutler-Hammer JD3250F JT3250T TA250KB HJD2070 JDB3175W JD3250 T250KB
Contextual Info: PG.74A.01.T.E 031-060 Page 37 Wednesday, March 17, 1999 8:05 AM Cutler-Hammer March 1999 Molded Case Circuit Breakers 70-250 Amperes 37 Series Cா J-Frame Interrupting Capacity Ratings UL489 Interrupting Capacity Ratings Circuit Breaker Type Number of Poles

BD188

Abstract: BD190 transistor d 188 80566 10 watt power transistor bd TRANSISTOR BD 187 transistor bd 320 c BD185 BD transistor bd 190
Contextual Info: M O T O R O L A SC Í X S T R S / R F3- 6367254 MOTOROLA Th SC DE I b 3 t 7 5 S 4 96D 8 0 5 6 5 CXSTRS/RJF > GOflDShS D MOTOROLA n SEM ICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILIC O N PNP T RA N SIST O R 4 A M PERE POWER T RA N SISTO R . . . designed for use in 5 to 10 Watt audio amplifiers utilizing

TC40H368P

Abstract: TC40H367P TC40H tc5012bp TC40H367F TC40H367
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC40H367P/F TC40H368P/F C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 4 0 H 3 6 7 HEX BUS B U FFER NONINVERTED 3 -S T A T E OUTPUT T C 4 0H 3 68 HEX BUS B U FFER IN VERTED 3 -S T A T E OUTPUT The TC40H367 and the TC40H368 are hex

Contextual Info: H D 100180 Fast 6-b it Adder The H D 100180 is a High Speed 6 -b it Adder capables o f perform ing as fu ll 6 -b it add itio n o f 2 active lo w Carry Generate, and active lo w Carry operands in 2ns. Inputs fo r the adder are active lo w Carry-ln, Carry Lookahead, as a second order Lookahead

NJM2256

Abstract: NJM225G NJM225GM IGST BLRM
Contextual Info: 5-164 m vij\ J, • ro H E n M □ H •D r \> r Ml >i V n 1 CD O * r\ • • 2 -< & «ä O tii >£ vi ^ vj] I - -531 4» z c— 3 ro 1-0 j=. P3 3 §> St -ni1 GND ¡3 D# Vcc ÜH3HEEHEEH a- 4 nut- XS W Æ] nnt “H1 ever i yj A V I 9 n >J iiii c~ i o|d V

910-240

Abstract: 2702141
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rt 02893 • Tel. 401 -823-5200 • FAX 401-823-8723 • TWX 9102403454 EMC*Product "STS" Series o Plating: r° nf *14: 400u." Tin terminal, 200u" Cadmium Chromate base/eyelet

TO-92variant

Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)

AI 186 N

Abstract: CN001 M1515
Contextual Info: sMM EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING SD -520 18-6* *5 •S. s. o ro t o o O •r zrx O HVi o o ^ s ¡1 if -j IS o o ro \ m 4 CO ^ CD w i - ig □ PQ$ O w ■e Owr > o 2.3±0.05 2=54±0=05 0J7 1 * SSi m . y~r »hs* 3* S* r+ ig c * 'f I vj

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC GP R 1G H T S R E S E RV E D. R EV 1S I O N S DIST 00 p LTR DESCRIPTION DATE DWN APVD A REV PER E C O - 0 0 6 5 2 5

Contextual Info: Series 180 Trimming Potentiometer MULTI TURN Linear Features.' • • • • Cermet 19 mm rectangular industrial purpose Low PC board profile Transparent and non transparent housing Precious metal wipers. Shaft, knob and panel mount options Standard Resistance

D237A

Abstract: NPN Transistor 1500V
Contextual Info: NPN triple diffuseci planar silicon transistor Package . TO-3PB | / Use Very high-definition color display, horizontal deflection output Features . High speed t^=300ns typ. . High breakdown voltage (V c b q =1500V) • High reliability (adoption of HVP process)

Contextual Info: JUN 2 H ¡Si.' r 19-0123; Rev. 0; 3/93 y k iy jx i> k i Low-Power, 8-Channel, S erial 12-Bit ADCs The 4 -w ire serial interface d ire ctly co n n ects to SPI , QSPI™ and Microwire™ devices without external logic. A serial strobe output allows direct connection to TMS320

Contextual Info: H D 7 4 A C 2 8 3 / H D 7 4 A Description C T Pin 2 8 3 ' S ! X K r & S ? A " “ Assignment T he H D 74A C 283/H D 74A C T283 high-speed 4-bit binary full adder w ith internal c a n y lookahead accepts tw o 4-bit binary w ords A —A s, Bo—B 3 and a Carry input (Co). I t generate* th e binary Sum

MA182

Abstract: MA2B182
Contextual Info: Switching Diodes MA2B182 MA182 Silicon epitaxial planar type Unit : mm φ 0.56 max. For high-voltage switching circuits, small power rectification 1 • Features 4.5 max. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

MARKING SMD 43t

Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Contextual Info: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

Contextual Info: Bias D etector Diodes V 2.00 i B • fe ' i ZBD Beam Lead Diodes Style 965A Teat Frequency Band Model N um ber Ä v3.4,5 M inim u m ^ M inim um 2 E o .m V -d B m ) (k Ohm s) (M inim um ) (Maximum) WAtfHfiB X 46 2 05 1.0 MA4C186B X 50 8 2.0 5.0 MAW lâGC

2SK3029

Contextual Info: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

PDU15F

Abstract: PDU15F-1 PDU15F-2 PDU15F-3 PDU15F-4 PDU15F-5 PDU15F-6 PDU15F-8
Contextual Info: PDU15F data 3  delay devices, inc. 5-BIT PROGRAMMABLE DELAY LINE SERIES PDU15F FEATURES • • • • • • • • PACKAGES Digitally programmable in 32 delay steps Monotonic delay-versus-address variation Two separate outputs: inverting & non-inverting

2SC183

Abstract: 2SC183 P 2SC183 R japanese 2sc183 transistor manual
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: PDU15F data 3  delay devices, inc. 5-BIT PROGRAMMABLE DELAY LINE SERIES PDU15F FEATURES • • • • • • • • PACKAGES Digitally programmable in 32 delay steps Monotonic delay-versus-address variation Two separate outputs: inverting & non-inverting