AI 186 N Search Results

Contextual Info: 10 ENG. NO. 83612-9020 N A T E R IA L NO. 836129020 qpp .715 18.16 S 6 fl as TYP. - 6.78 REF. .125 - HEX. 3.18 2 PLA C E S P A N E L CUT-OUT 2-56 JAC KPO ST 715 2 PLACES ' G OF .186 MAX. .055 .41 10.A 1.A0 RECOMMENDED REF. P A N E L THICKNESS AI .050 1.27

Cutler-Hammer Digitrip RMS 310 LSG 50

Abstract: Cutler-Hammer* MDL3800 Cutler-Hammer Digitrip RMS 310 Cutler-Hammer Digitrip RMS 310 rating plug MT2800 Cutler-Hammer Digitrip RMS 310 trip unit mdl3800f TA801MA Cutler-Hammer* MDL 800A mounting MDL3800
Contextual Info: PG.74A.01.T.E 061-090 Page 67 Wednesday, March 17, 1999 8:15 AM Cutler-Hammer March 1999 Molded Case Circuit Breakers 300-800 Amperes 67 Series Cா M-Frame Interrupting Capacity Ratings UL489/CSA Interrupting Capacity Ratings➀ Circuit Breaker Type Number of

BD188

Abstract: BD190 transistor d 188 80566 10 watt power transistor bd TRANSISTOR BD 187 transistor bd 320 c BD185 BD transistor bd 190
Contextual Info: M O T O R O L A SC Í X S T R S / R F3- 6367254 MOTOROLA Th SC DE I b 3 t 7 5 S 4 96D 8 0 5 6 5 CXSTRS/RJF > GOflDShS D MOTOROLA n SEM ICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILIC O N PNP T RA N SIST O R 4 A M PERE POWER T RA N SISTO R . . . designed for use in 5 to 10 Watt audio amplifiers utilizing

TC40H368P

Abstract: TC40H367P TC40H tc5012bp TC40H367F TC40H367
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC40H367P/F TC40H368P/F C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 4 0 H 3 6 7 HEX BUS B U FFER NONINVERTED 3 -S T A T E OUTPUT T C 4 0H 3 68 HEX BUS B U FFER IN VERTED 3 -S T A T E OUTPUT The TC40H367 and the TC40H368 are hex

Contextual Info: H D 100180 Fast 6-b it Adder The H D 100180 is a High Speed 6 -b it Adder capables o f perform ing as fu ll 6 -b it add itio n o f 2 active lo w Carry Generate, and active lo w Carry operands in 2ns. Inputs fo r the adder are active lo w Carry-ln, Carry Lookahead, as a second order Lookahead

910-240

Abstract: 2702141
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rt 02893 • Tel. 401 -823-5200 • FAX 401-823-8723 • TWX 9102403454 EMC*Product "STS" Series o Plating: r° nf *14: 400u." Tin terminal, 200u" Cadmium Chromate base/eyelet

AI 186 N

Abstract: CN001 M1515
Contextual Info: sMM EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING SD -520 18-6* *5 •S. s. o ro t o o O •r zrx O HVi o o ^ s ¡1 if -j IS o o ro \ m 4 CO ^ CD w i - ig □ PQ$ O w ■e Owr > o 2.3±0.05 2=54±0=05 0J7 1 * SSi m . y~r »hs* 3* S* r+ ig c * 'f I vj

Contextual Info: Series 180 Trimming Potentiometer MULTI TURN Linear Features.' • • • • Cermet 19 mm rectangular industrial purpose Low PC board profile Transparent and non transparent housing Precious metal wipers. Shaft, knob and panel mount options Standard Resistance

D237A

Abstract: NPN Transistor 1500V
Contextual Info: NPN triple diffuseci planar silicon transistor Package . TO-3PB | / Use Very high-definition color display, horizontal deflection output Features . High speed t^=300ns typ. . High breakdown voltage (V c b q =1500V) • High reliability (adoption of HVP process)

pj 67 diode

Abstract: pj 66 diode smd diode code pj smd marking code pJ smd diode code pj 65 Diode smd code PJ marking code LA SMD smd diode code pj 40 Diode type SMD marking PJ smd DIODE code marking Q
Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode M1FS6 Package : M1F 60 V 1.2A A y - K v - '/ Cathode mark Feature • /Jvg aS M D • V f =0.58V • P rrsm ^ C 5 > ì /x |T 6 4 • Small SMD • Low V f=0.58V <SKE • P rrsm Rating • D C/D C • mm. y-A.oAfâgg

Contextual Info: JUN 2 H ¡Si.' r 19-0123; Rev. 0; 3/93 y k iy jx i> k i Low-Power, 8-Channel, S erial 12-Bit ADCs The 4 -w ire serial interface d ire ctly co n n ects to SPI , QSPI™ and Microwire™ devices without external logic. A serial strobe output allows direct connection to TMS320

MA182

Abstract: MA2B182
Contextual Info: Switching Diodes MA2B182 MA182 Silicon epitaxial planar type Unit : mm φ 0.56 max. For high-voltage switching circuits, small power rectification 1 • Features 4.5 max. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

MARKING SMD 43t

Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Contextual Info: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,

Contextual Info: Bias D etector Diodes V 2.00 i B • fe ' i ZBD Beam Lead Diodes Style 965A Teat Frequency Band Model N um ber Ä v3.4,5 M inim u m ^ M inim um 2 E o .m V -d B m ) (k Ohm s) (M inim um ) (Maximum) WAtfHfiB X 46 2 05 1.0 MA4C186B X 50 8 2.0 5.0 MAW lâGC

2SC183

Abstract: 2SC183 P 2SC183 R japanese 2sc183 transistor manual
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

44t transistor

Contextual Info: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm

2SB1516F5

Abstract: rohm 574 2SB1516 2SB1516(F5)
Contextual Info: h "7 > y T £ /Transistors 2 S B 1 5 1 6 2S B 1516F5 F 5 Epitaxial ixial Planar PNP Silicon Transistor fàWÏ tfàty%/L- 0\N Freq. Power Amp. • W fi'+üH I/D im ensions Unit : mm) V > > J V " , V 'J |T 1) VcE(sat) VcE(sat)——0-3V (lc /lB = -0.4A /-0 .0 4A )

Contextual Info: 2SJ275 2093 LD L o w D rive S eries 2090 V DSs = 1 0 0 V P Channel Power M OSFET '£4240 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.

LA7019

Abstract: 1054B
Contextual Info: NO.1054B SAfÈYO 7 L A F O 19 Monolithic Linear IC Electronic Switch for Use in VTR ^pjpli^cations I J I , F ea tu r es •Wide input dynam ic range * Low distortion ■Good frequency characteristic M axim um R a tin g s a tT a = 25°C M aximum Supply Voltage

Contextual Info: OSM SMA O-RIng Qaskat H«rm«tlo Sm I HtnrMUo oottdal RF oonnaotore using an elastomer gaskst to seal to the housing i n available In a wWe varlsty of configurations. This gastotlng mathod Is particularly useful In appfioatlons whara the oonnaotor may hava to

D360SC6M

Abstract: L017
Contextual Info: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °

2SA682-Y

Abstract: 2SC1382 2SA682 2SA682-O AC46C 2SA682O transistor lt 186
Contextual Info: 2SA682 v ' J = l > P N P x f c ; ° # * v T J l ^ f ' ;7 > v : * * P C T ^ S SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U nit in mm O M edium P o w e r A m p lifier A p p lic a tio n s O D riv e r S ta g e A m p lifier A p p lic a tio n s • r S iitE E 'C 'f" •

CATVs

Abstract: 80C186 80C188 yx 801 AML8
Contextual Info: • ♦ PRODUCT BRIEF Highly-Integrated, High-Performance 80C186 Upg r a d es AM D's Am 186EM and A m i 88EM microcontrollers are based on an 80C 186 core w ith enhanced performance and integrated peripherals— offering up to tw ice the performance of the 8 0C 186 without increasing

LM-035MGB

Abstract: SL-2284-20.22 SLA-5784 LM-035MGA DLG-4137 hp 5082 0180 lp 4137 SL-1341 SL-2129 LM53
Contextual Info: -9 0 * % s £ -f < T 'Jù fe tt g w n - r /- K Xy ;nm i LM-035DUB - D — A 0 .7 5x7 G a A sP 610 n M A N 28 - Gl 0.32 5x7 G a A sP 585 LM-035YYA - n — A 0 .7 5X 7 G a A sP 585 LM-035YYB - u.y 5x7 G aA sP 585 0.32 5x7 G aP 565 m M A N 24 Gl ¥ tfj f t Æ T« = 25‘Cj