AI 186 N Search Results

Contextual Info: 10 ENG. NO. 83612-9020 N A T E R IA L NO. 836129020 qpp .715 18.16 S 6 fl as TYP. - 6.78 REF. .125 - HEX. 3.18 2 PLA C E S P A N E L CUT-OUT 2-56 JAC KPO ST 715 2 PLACES ' G OF .186 MAX. .055 .41 10.A 1.A0 RECOMMENDED REF. P A N E L THICKNESS AI .050 1.27

BD188

Abstract: BD190 transistor d 188 80566 10 watt power transistor bd TRANSISTOR BD 187 transistor bd 320 c BD185 BD transistor bd 190
Contextual Info: M O T O R O L A SC Í X S T R S / R F3- 6367254 MOTOROLA Th SC DE I b 3 t 7 5 S 4 96D 8 0 5 6 5 CXSTRS/RJF > GOflDShS D MOTOROLA n SEM ICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILIC O N PNP T RA N SIST O R 4 A M PERE POWER T RA N SISTO R . . . designed for use in 5 to 10 Watt audio amplifiers utilizing

TC40H368P

Abstract: TC40H367P TC40H tc5012bp TC40H367F TC40H367
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC40H367P/F TC40H368P/F C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 4 0 H 3 6 7 HEX BUS B U FFER NONINVERTED 3 -S T A T E OUTPUT T C 4 0H 3 68 HEX BUS B U FFER IN VERTED 3 -S T A T E OUTPUT The TC40H367 and the TC40H368 are hex

910-240

Abstract: 2702141
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rt 02893 • Tel. 401 -823-5200 • FAX 401-823-8723 • TWX 9102403454 EMC*Product "STS" Series o Plating: r° nf *14: 400u." Tin terminal, 200u" Cadmium Chromate base/eyelet

AI 186 N

Abstract: CN001 M1515
Contextual Info: sMM EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING SD -520 18-6* *5 •S. s. o ro t o o O •r zrx O HVi o o ^ s ¡1 if -j IS o o ro \ m 4 CO ^ CD w i - ig □ PQ$ O w ■e Owr > o 2.3±0.05 2=54±0=05 0J7 1 * SSi m . y~r »hs* 3* S* r+ ig c * 'f I vj

Contextual Info: Series 180 Trimming Potentiometer MULTI TURN Linear Features.' • • • • Cermet 19 mm rectangular industrial purpose Low PC board profile Transparent and non transparent housing Precious metal wipers. Shaft, knob and panel mount options Standard Resistance

D237A

Abstract: NPN Transistor 1500V
Contextual Info: NPN triple diffuseci planar silicon transistor Package . TO-3PB | / Use Very high-definition color display, horizontal deflection output Features . High speed t^=300ns typ. . High breakdown voltage (V c b q =1500V) • High reliability (adoption of HVP process)

pj 67 diode

Abstract: pj 66 diode smd diode code pj smd marking code pJ smd diode code pj 65 Diode smd code PJ marking code LA SMD smd diode code pj 40 Diode type SMD marking PJ smd DIODE code marking Q
Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode M1FS6 Package : M1F 60 V 1.2A A y - K v - '/ Cathode mark Feature • /Jvg aS M D • V f =0.58V • P rrsm ^ C 5 > ì /x |T 6 4 • Small SMD • Low V f=0.58V <SKE • P rrsm Rating • D C/D C • mm. y-A.oAfâgg

Contextual Info: JUN 2 H ¡Si.' r 19-0123; Rev. 0; 3/93 y k iy jx i> k i Low-Power, 8-Channel, S erial 12-Bit ADCs The 4 -w ire serial interface d ire ctly co n n ects to SPI , QSPI™ and Microwire™ devices without external logic. A serial strobe output allows direct connection to TMS320

MARKING SMD 43t

Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Contextual Info: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,

Contextual Info: Bias D etector Diodes V 2.00 i B • fe ' i ZBD Beam Lead Diodes Style 965A Teat Frequency Band Model N um ber Ä v3.4,5 M inim u m ^ M inim um 2 E o .m V -d B m ) (k Ohm s) (M inim um ) (Maximum) WAtfHfiB X 46 2 05 1.0 MA4C186B X 50 8 2.0 5.0 MAW lâGC

2SC183

Abstract: 2SC183 P 2SC183 R japanese 2sc183 transistor manual
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SB1516F5

Abstract: rohm 574 2SB1516 2SB1516(F5)
Contextual Info: h "7 > y T £ /Transistors 2 S B 1 5 1 6 2S B 1516F5 F 5 Epitaxial ixial Planar PNP Silicon Transistor fàWÏ tfàty%/L- 0\N Freq. Power Amp. • W fi'+üH I/D im ensions Unit : mm) V > > J V " , V 'J |T 1) VcE(sat) VcE(sat)——0-3V (lc /lB = -0.4A /-0 .0 4A )

Contextual Info: 2SJ275 2093 LD L o w D rive S eries 2090 V DSs = 1 0 0 V P Channel Power M OSFET '£4240 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.

Contextual Info: OSM SMA O-RIng Qaskat H«rm«tlo Sm I HtnrMUo oottdal RF oonnaotore using an elastomer gaskst to seal to the housing i n available In a wWe varlsty of configurations. This gastotlng mathod Is particularly useful In appfioatlons whara the oonnaotor may hava to

D360SC6M

Abstract: L017
Contextual Info: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °

2SA682-Y

Abstract: 2SC1382 2SA682 2SA682-O AC46C 2SA682O transistor lt 186
Contextual Info: 2SA682 v ' J = l > P N P x f c ; ° # * v T J l ^ f ' ;7 > v : * * P C T ^ S SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U nit in mm O M edium P o w e r A m p lifier A p p lic a tio n s O D riv e r S ta g e A m p lifier A p p lic a tio n s • r S iitE E 'C 'f" •

LM-035MGB

Abstract: SL-2284-20.22 SLA-5784 LM-035MGA DLG-4137 hp 5082 0180 lp 4137 SL-1341 SL-2129 LM53
Contextual Info: -9 0 * % s £ -f < T 'Jù fe tt g w n - r /- K Xy ;nm i LM-035DUB - D — A 0 .7 5x7 G a A sP 610 n M A N 28 - Gl 0.32 5x7 G a A sP 585 LM-035YYA - n — A 0 .7 5X 7 G a A sP 585 LM-035YYB - u.y 5x7 G aA sP 585 0.32 5x7 G aP 565 m M A N 24 Gl ¥ tfj f t Æ T« = 25‘Cj

Contextual Info: – T H E C H A L L E N G E R I N B U I L D I N G A U T O M A T I O N R E G I N – T H E C H A L L E N G E R I N B U I L D I N G A U T O M A T I O N Box 116, S-428 22 Kållered, Phone: +46 31 720 02 00 info@regin.se Sweden Fax: +46 31 720 02 50 www.regin.se

Contextual Info: I LS TTL DN74LS Series DN74LS153 DN74LS153 Dual 4 -lin e to 1 -lin e Data Selectors / Multiplexers • Description P-2 D N74LS153 contains tw o 4-line to 1-line data selector/ m ultiplexer circuits. ■ Features • • • • Independent enable input for each circuit

27128 pin diagram

Abstract: intel EPROM 27128 PROGRAM 27128 INTEL 27128 27128 eprom intel 27128 block diagram 23/INTEL 27128A INTEL 27256 EPROM intel 8051 40 pin INTEL 27128A EPROM
Contextual Info: intéT 27128A ADVANCED 128K 16Kx8 UV ERASABLE PROM • inteligent Programming Algorithm — Fastest EPROM Programming ■ inteligent Programming™ Mode —Automated Programming Operations ■ Compatible with 2764A, 27128, 27256 ■ ± 10% Vcc Tolerance Available

3958A

Contextual Info: T - 7 7 ' ^ O rdering num ber: EN39S8A_ SANYO SEMICONDU CTOR CORP S3E » • 711707b 0010b71 bT4 M T S A J LC89510 No. 3958A SAXYO i CMOS LSI Error Correction and Host-interface IC for CD-ROM and CD-I Players PINOUT OVERVIEW The LC89510 is an error conection and host-interface

RF remote control pir

Abstract: 433.92 loop antenna
Contextual Info: Tem ic U3741BM S e m i c o n d u c t o r s UHF Remote Control Receiver Development tools and samples not available before Q1.98 Description The U3741BM is a multi-chip PLL receiver IC in an SO20 package. The device is especially designed for the requirements of low-cost transmission systems with low

Contextual Info: MG100J2YS50 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One Package. Enhancement-Mode.