AHW 19 Search Results

AHW-25

Abstract: AHW-10 AHW-250 strong 5202 AHW 19 AHW 25
Contextual Info: AHW Series Gold Aluminum Housed Wirewound Resistors MERITEK FEATURES • High power rating, small size and ultra precision. • Standard winding &non-inductive winding types. • High stability, strong construction. ELECTRICAL SPECIFICATION Characteristics

Wirewound Resistors 300w

Abstract: AHW-10 AHW-25
Contextual Info: AHW Series Gold Aluminum Housed Wirewound Resistors MERITEK FEATURES • High power rating, small size and ultra precision. • Standard winding &non-inductive winding types. • High stability, strong construction. ELECTRICAL SPECIFICATION Characteristics

RK-71

Abstract: ctsk UO-35
Contextual Info: rEHEPATOPHbm nEHTOfl PENTODE rK-71 reHepaTopHbiti neHTOfl TK-71 npe,qHa3HaMeH r e H e p u p o B a H u n K o n e 6 aHw /i m y c u n e H u n m o li^ h o c tm b C T am iO H apH bix p a flM O T e x H M H e cK M x y c T a H O B K a x . OBLIQUE CBEflEHMfl K a T O fl -

Contextual Info: SERIES MHV H4 HIGH VOLTAGE CONNECTORS Description Contents S U H N E R M H V connectors are coaxial miniature high voltage (M HV = Miniature High Voltage) connectors with 5 kV rms test voltage (mated pairs). The M H V connectors have a working voltage up

FMU 860

Abstract: DZ45 d8107 4b55 E8-10 C708 CD05 x0b5 CI 4553 3i54
Contextual Info: ?:*8/</>=: +@=0=+AB*0 CD05.*:+",% !"#$%&'()*+%,+-./0121+!34+35678*1 95:+7)+05+$,+;<+':=>1</11/5> @*1D:/)0/5> E8$)MP5B3<.$&0$.)MID)60#8)0"#$%&'*)(&07$&)!;)0.) ($.0%"$():,&)3>)?-0#.@.)HFHI),&)EHI)#&'".10.0,") '//*0+'#0,".4)!#)0"#$%&'#$.)');F)*'.$&)60#8)'")$*$+#&,<

Contextual Info: HM511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION HM511666JP Series The Hitachi HM511666 are CMOS dynamic RAM orga­ nized as 65,536-word x 16-bit. HM511666 have realized higher density, higher performance and various functions by

uPD70F3561

Abstract: uPD70F35 V850E2/FK4-H
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FK4-H 32-bit Single-Chip Microcontroller µPD70F3561 Renesas Electronics www.renesas.com R01DS0143ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change

uPD70F35

Abstract: UPD70F40 R01DS0142ED0100
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FL4 32-bit Single-Chip Microcontroller µPD70F3559 µPD70F4011 µPD70F3560 µPD70F4012 Renesas Electronics www.renesas.com R01DS0142ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this

uPD70F3564

Abstract: V850E2/FL4-H
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FL4-H 32-bit Single-Chip Microcontroller µPD70F3564 Renesas Electronics www.renesas.com R01DS0144ED0100 2013-05-24 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change

uPD70F3558

Abstract: V850E2 FK4 uPD70F3555 renesas v850e2 hardware manual FK4-G V850E2/FK4 uPD70F35 v850e2 Fx4
Contextual Info: dfgdfg Cover Data Sheet 32 V850E2/FK4 V850E2/FK4-G 32-bit Single-Chip Microcontroller µPD70F3555 µPD70F4007 µPD70F3556 µPD70F4008 µPD70F3557 µPD70F4009 µPD70F3558 µPD70F4010 µPD70F3592 Renesas Electronics www.renesas.com R01DS0141ED0100 2013-05-24

44-PIN

Abstract: LH5PV16256
Contextual Info: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)

35L004006416

Abstract: NexFlash Technologies
Contextual Info: NexFlash Technologies, Inc. CONFIDENTIAL Preliminary Specification 35L004006416 Specification, Rev - Embedded High Speed NexFLASH Memory Low Power 1-Mbit 64K x 16 Embedded FN-FN FLASH Memory Features • FN-FN FLASH Technology • 0.35um, 3-well CMOS Technology

EGH16-06

Contextual Info: EGH16 75A - i r a i w x : O u tlin e d r a w in g s * GENERAL-USE THYRISTOR • 4# ^ : F e a tu re s • i n C o m p r e s s i o n • S W /E contact type High voltage capability • Large d v /d t : A p p lic a tio n s 9 • #1 M o to r control applications

Contextual Info: 19-2243; Rev 1; 12/05 Low-Power µP Reset Circuits in 3-Pin SC70/SOT23 The MXD1810–MXD1813/MXD1815–MXD1818 family of microprocessor µP reset circuits monitor power supplies in µP and digital systems. These devices provide excellent circuit reliability and low cost by eliminating

Dii 1501

Abstract: UM01 2SJ358 TC8011 Diode UM01 LLB DU P1000 diode w94c RFT M-1
Contextual Info: M O S f ë W ï t ë ù m h 7 > y x $ M O S Field Effect T ra n s is to r 2SJ358 MOS FET m m x ' f y ^ > < 7 m 2SJ358ttP51+ ? O U » M O S FETT5, 5 V W ü& IC W tti tl te cfc-5 iâ ii %mA''ôJfÊ4' 7, -f -y ^ T'T o * S n ° p á 5 t - > f i Í A t f ''( g ; < X - f

LM1010

Abstract: d71086 5s20
Contextual Info: NEC NEC Electronics Inc. Description The fiPD71037 is a direct memory access DMA control­ ler that provides high-speed data transfers between peripheral devices and memory for microprocessor sys­ tems. It is faster and draws less power than its predeces­

Contextual Info: AS7C3256 3.1V 32Kx8 CMOS SRAM Features •O iganization: 32,7 68 w o ris x 8 b i s • Singie 3 3 ± 0 3V pow e r sappiy • H igh qpesd - 1 2 / 1 5 / 2 0 nsaddiess access tin e - 3 / 4 / 5 ns output enable access tin e •Veiy low pow e r consjm ption -Active: 198 mW max, 12 ns cycle

Contextual Info: HI T A C H I / LOGIC/ARRAVS/riEM a*JE J> 4*Hba03 0Qlt.b57 1 HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES • • HM65256BP Series Single 5V ±10% High Speed Access Time CE Access T i m e . 100/120/150/200ns

TDA2579B

Abstract: tda2579 TDA25798 ZENER DIODE 814
Contextual Info: B & D Enterprises DEVELOPMENT DATA Main & Liberty St. T his data sheet c o n ta in s advance in fo rm a tio n and Russell, PA 16345 sp e cific a tio n s are s u b je c t to change w ith o u t n o tic e . 1-800 TDA2579B 458 6053 fax 814 - 757 - 5400 HORIZONTAL/VERTICAL SYNCHRONIZATION CIRCUIT

CSB500F2

Abstract: constant time delay 000M370 HJM2257 NJM2257
Contextual Info: SYNCHRONOUS SEPARATOR W IT H AFC NJM2257 N JM 2 2 5 7 ex cu tes H o riz o n ta l a n d V e rtic a l s y n c h r o n o u s s ig n a l s e p a ra tio n , a n d o d d /e v e n fie ld s ig n a l d e te c tio n , fro m c o m p o s it v id e o sig n als. B u ilt-in 1 /2 fH K ille r F u n c tio n c ir c u it c a n m a k e s ta b iliz a tio n o f th e H o r iz o n ta l s ig n a l o s c illa tio n o u tp u t d u rin g

octal priority encoder

Contextual Info: 00 Cat.Book Page 17 Friday, June 13, 1997 12:49 PM CA82C37A PROGRAMMABLE DMA CONTROLLER IOR A6 A5 A4 EOP 43 42 41 40 IOW A7 1 2 44 NC MEMR 3 READY MEMW 4 A6 A5 A4 EOP A3 A2 5 A7 NC 7 39 A3 NC 8 38 A2 37 A1 36 A0 35 VDD 34 DB0 33 DB1 HLDA 9 A1 A0 V DD ADSTB

Contextual Info: H M 5 1 4 1 0 2 C /C L S e r ie s Preliminary 4,194,304-word x 1 -b it Dynamic Random Access Memory HITACHI The Hitachi HM514102C/CL is a CMOS dynamic RAM organized 4,194,304-w ord x 1-bit. HM 514102C/CL has realized higher density, higher perform ance and various functions by

Contextual Info: CXA1208R/Q SONY, 8mm VCR Color Signal Processing Description T h e CXA1208R/Q is a consumer IC developed for 8mm VCR color signal processing. Usage in combination with CX A1207A allows tor the processing of Y/C main signals. Features • Single 5V power supply

7C1025

Contextual Info: AS7C1025 AS7C31025 J l 5V/3.3V 128Kx8 CMOS SRAM Common I/O Features • O rganization: 1 3 1 ,0 7 2 w o rd s x 8 b i s • H jgh gpead - 1 0 / 1 2 / 1 5 / 2 0 nsad d ress access tin e - 3 / 3 / 4 / 5 n s o u tp u t enabie access tim. e • Low pow e rc o n s jm ption