AF2302N Search Results

Contextual Info: AF2302N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Capable of 2.5V Gate Drive - Small Package Outline - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching, low

A1 sot23 n-channel

Abstract: SG5848 AF2302N marking code YW DIODE
Contextual Info: AF2302N 20V N-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = 20V

SOT23 marking 6A

Abstract: SG5848 AF2302N OCT-12-2004
Contextual Info: AF2302N 20V N-Channel Enhancement Mode MOSFET „ Features „ Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package

AF9435A

Abstract: DMN5L06TK
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1128_R00 Contact Date: Implementation Date: Alert Category: Alert Type: February 13, 2009 May 14, 2009* Discrete Semiconductors End of Life EOL and Product Name Change PCN #: PCN #: 1128_Rev 00 TITLE Device EOL and Product Name Change