AF SOT 23 Search Results

IC104

Contextual Info: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5

BC817

Abstract: BC807 BC817-16 BC817-25 BC817-40 6a. sot 23 pnp marking 6A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC817-16 BC817-25 BC817-40 TRANSISTOR NPN SOT-23 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage

100MHZ

Abstract: BC817-16 BC817-25 BC817-40
Contextual Info: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic

bc857

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER

BC857

Abstract: BC858 BC856 BC856B BC857 Plastic BC857C BC856A BC857A BC857B BC858A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR BC857A, B,C BC858A, B,C PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER

DKs smd marking

Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
Contextual Info: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage

bc818

Abstract: BC818-16 BC818-25 BC818-40
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage

bc847

Abstract: BC848 BC846 BC846A BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A,B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications

6E SMD

Abstract: marking AF SOT-23 6F BC818A
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC818A BC818A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High collector current. 1 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High current gain. +0.05

BC859

Contextual Info: BC859 SOT-23 Silicon Planar Epitaxial Transistors TRANSISTORS PNP FEATURES * Ideally suited for automatic insertion * For switching and AF amplifier applications SOT-23 COLLECTOR MECHANICAL DATA * * * * 3 BASE Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

BC847B1F

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A, B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications

BC817A

Abstract: smd marking 6c marking 6A marking AF smd marking 6b
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC817A BC817A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

smd marking 5G

Abstract: MARKING 5E marking AF
Contextual Info: Transistors SMD Type PNP Silicon AF Transistors KC808A BC808A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

Bc817 sot-23

Abstract: 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1

KC807A-25

Abstract: 5C smd BC807A marking AF smd 5c KC807A-40 marking 5A
Contextual Info: Transistors SMD Type PNP Silicon AF Transistors KC807A BC807A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1

marking AF

Abstract: BC818
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC818 BC818 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1

EHs SOT-23

Abstract: EFs SOT-23
Contextual Info: BCW 65, BCW 66 NPN Silicon AF Transistor 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP 2 1 Type Marking Pin Configuration BCW 65A EAs 1=B 2=E 3=C SOT-23 BCW 65B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 SOT-23 TRANSISTOR PNP 1. BASE FEATURES z Suitable for AF-Driver stages and low power output stages z Complement to BC818 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BC808

Abstract: BC818
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 SOT-23 TRANSISTOR PNP 1. BASE FEATURES z Suitable for AF-Driver stages and low power output stages z Complement to BC818 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

mmbt9015

Abstract: MMBT9014B MMBT9014C MMBT9014D
Contextual Info: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9014B

Abstract: MMBT9014C MMBT9014D
Contextual Info: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9015DLT1

Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
Contextual Info: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9018G

Abstract: MMBT9018H
Contextual Info: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO