2SA794
Abstract: 2sc1567 2SA794A 2SC1567A T0126
Contextual Info: Power Transistors 2SA794, 2SA794A 2SA794, 2SA794A Silicon P N P Epitaxial Planar Type • Package Dimensions AF Output Drivers Complementary Pair with 2SC 1567, 2SC 1567A ■ Features • High collector-emitter voltage V c e o • Optimum for 40~100W AF output driver
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2sa7942sa794a2sc15672sc1567a+30-100wo-126t0126
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transistor 9015 c
Abstract: transistor c 9015 C 9015 transistor pnp transistor 9015 9015 transistor 9015 V. 9015 c af 9015 transistor 9015 LM 9015
Contextual Info: HN 9015 PNP Silicon Expitaxial Planar Transistor for switching and AF am plifier applications. The transistor is subdivided into four groups, A, B, C, and D, according to its DC current gain. As com plem entary type the NPN transistor HN 9014 is recommended.
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transistor 9015 ctransistor c 9015c 9015 transistorpnp transistor 9015+69015 transistor9015v. 9015 caf 9015transistor 9015lm 9015
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2SC1913
Abstract: 2SA913
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA913 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·Complement to Type 2SC1913 APPLICATIONS ·Designed for AF high power dirver applications. n
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2sa913-150v2sc1913-500ma+3-50ma-150ma-100v
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BR 9014
Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector
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br 9014br 9015br 9014 ctransistor 9015 c+69015 transistordata sheet transistor 9014transistor 90159015 pnppnp transistor 90159015 to-92
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transistor 9014 C npn
Abstract: V. 9014 c C 9014 transistor TRANSISTOR c 9014 9014 C transistor 9014 NPN transistor 9014 c 9014 Transistor S 9014 npn V 9014 c
Contextual Info: HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and D, acco rd in g to its DC current gain. As com plem entary type the PNP transistor HN 9015 is recommended.
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transistor 9014 c npnv. 9014 cc 9014 transistortransistor c 9014+69014 ctransistor 9014 npntransistor 9014 c9014 transistors 9014 npnv 9014 c
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BR 9014
Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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br 9014br 9014 transistorst 9014 cbr 9014 c+6c 9014 transistorbr 9014 c transistorv. 9014 ctransistor 9014 c npn9014transistor c 9014
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BR 9014
Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mabr 9014br 9014 transistorbr 9015+7br 9014 ctransistors br 9015transistor 9014 npn9015 pnptransistor 9015 ctransistor c 9015ts 9015
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br 9015
Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mabr 9015pnp transistor 9015transistor 9015 c+79015 pnpbr 9014transistor c 90159015 transistorc 9015 transistortransistor 9015br 9015 c
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BR 9015
Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mabr 9015transistor 9015 ctransistor c 9015+7br 9015 cpnp transistor 9015transistors br 90159015 pnptransistor 90159015* transistorc 9015 transistor
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transistor c 9015
Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100matransistor c 9015br 9014br 9015+7br 9014 transistortransistor 9015 c9015 pnppnp transistor 9015br 9014 c transistortransistors br 90159015 to-92
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BR 9014 transistor
Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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br 9014 transistorbr 9014transistor 9014c 9014 transistor+6st 9014 cbr 9014 c9014transistor c 9014st 9014npn 9014
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BR 9014
Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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br 9014br 9014 transistor9014c 9014 transistor+6transistor 9014 npntransistor c 9014st 9014 cbr 9014 cv. 9014 ctransistor 9014 c npn
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BR 9014
Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
Contextual Info: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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br 9014br 9014 transistorbr 9014 cst 9014 c+6c 9014 transistorst 9014transistor c 9014transistor 9014v. 9014 c9014
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BR 9015 C
Contextual Info: cn C" d ca d Specifications: 1. Insulation resistance af adjacent open terminals shall not be less than 50 MegaOhms when measured with 100 Volts resistance meter. 2. Connector shall withstand 250 Volts R.M.S. between adjacent open terminal for one minute.
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2SC2590
Abstract: hlk2 2SA1110 HLK-2 100w npn
Contextual Info: Power T ransistors 2SÇ2590 2SC2590 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Power Amplifier Complementary Pair with 2SA1110 ■Features • Very good linearity of DC current gain Iife • High transition frequency (f-r) • Optimum for the driver of 40~100W in complementary pair with
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2sc25902sa1110hlk2hlk-2+1100w npn
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2SA914
Abstract: 2SC1953
Contextual Info: PANASONIC INDL/ELEKiSEMI} 75C D J 1^35654 □00fl77feJ □ h *_ T ‘ 5 3 " 7 2SA914 2SA914 '> iJ zj > PN P x fcf£ ^r'> 7 Jl^y Is PNP Epitaxial Planar '(g;^;SWi HU liltiffl/AF Power Pre-amplifier 2SC1953 >J/Complementary Pair with 2SC1953 • ^/Features
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9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
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cl9000t0-92b10kfi9011 9012 9013 9014 9018+99011 npn transistortransistor c 9018npn 9016 transistorf 9016 transistortransistor 9014 c npnc 9014 transistor9018 transistor9016 transistorpnp transistor 9015
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2SA11
Abstract: 2SA1125 2SC2633 panasonic FC
Contextual Info: P o w e r T ra n s is to rs 2SC2633 2SC2633 Silicon NPN Epitaxial Planar Type Package Dimensions AF High Voltage Amplifier Complementary Pair with 2SA1125 •Features U n it ! mm 4.8max. 10.5 ± 0 .5 S ,9.8max.» OlT5 m • Good linearity of DC current gain hFE
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2sc26332sa1125-2q-30-502sa11+1panasonic fc
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transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
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t0-92b500fi10kfitransistor c 9018+9transistor cl 1009011 9012 9013 9014 9018transistor 9014 npntransistor 9013 npn audio outputv. 9014 c9016 transistoraudio output transistor npn 90139011 npn transistornpn 9016 transistor
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2SC2591
Abstract: 2sc2592 2SA1111 2SA1112 2SC2591/2592
Contextual Info: 2SC 2591, 2SC 2592 Power T ransistors 2SC2591, 2SC2592 Silicon NPN Epitaxial Planar Type P ackage Dim ensions AF Driver, High Pow er Am plifier C om plem entary Pair with 2 S A 1 111, 2 S A 1 112 Unit 1 mm 10.5 + 0.5 Oirt 9.8max., 7.6min. • Features • Very good linearity of DC current gain Iife
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2sc25912sc25920--100w2sa1111+22sa11122sc2591/2592
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9014 ch
Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Contextual Info: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011
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o-92a9014 chtransistor npn c 90149018 transistor+7transistor c 90189011 9012 9013 9014 9018100-10l9018transistor 9013 npn audio output90119012 pnp transistor
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241
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