AER MARKING Search Results

Microspire transformer

Abstract: Microspire MTLM-2056 Transformers MSCI 10000 SESI 91 MPCI 233 100 000 G 10 en61558 Microspire SMD SMD Transistor dj rm ct08 series smd marking m11
Contextual Info: lo o n Wound Magnetics Experts ch d u e T ro l P ia r to t n s u sig d e n D I m d o n a Fr e d ra G gh i H ace p S Aer s e i g io ct tics u a on ® e nc efe D ys a ailw R g Oil in rill ry st ndu D I al c edi M www.microspire.c m n  +HDG2IÀFH0LFURVSLUH

V15X10P

Abstract: v5x5pu RM0505 RM1505 V5X5P
Contextual Info: V5X5P, V15X5P, V15X10P Vishay Foil Resistors Bulk Metal Foil Technology Discrete Chips with TCR of 2 ppm/°C and Tolerance to 0.005 % for use in Hybrid Circuits FEATURES FIGURE 1 - TRIMMING CHIP RESISTORS1 • Temperature coefficient of resistance TCR):

Contextual Info: Product specification 2SB1424 Features Low VCE sat . VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20

SMD TRANSISTOR MARKING 2A

Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage

AER marking

Abstract: 2SB1424 PCM600
Contextual Info: 2SB1424 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: -3 A Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

2SB1424

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1424 TRANSISTOR PNP 1. BASE FEATURES  Excellent DC Current Gain  Low Collector-emitter saturation voltage  Complement the 2SD2150 2. COLLECTOR

marking RY

Abstract: 2SC5373 transistor for UHF
Contextual Info: 2SC5373 NPN Epitaxial Planar Silicon Transistor For UHF to S Band Low-noise Amp / Osillator TENTATIVE Features and applications • Low noise : NF=1.2dB typ f=2GHz • High gain : | S21e | 2 =10dB typ (f=2GHz) • High cutoff frequency : fT=13GHz typ Absolute Maximum Ratings / Ta=25°C

Contextual Info: 2SB1424 Epitaxial Planar PNP Transistors SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -20 Vdc Collector-Emitter Voltage VCEO -20 Vdc Emitter-Base Voltage

sot89 bv

Abstract: BV SOT SOT-89 2SB1424
Contextual Info: 2SB1424 Epitaxial Planar PNP Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -20 Vdc Collector-Emitter Voltage VCEO -20 Vdc Emitter-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)

Contextual Info: Military and Space Established Reliability ER Vishay Foil Resistors Z-Bulk Metal Foil Technology RNC90Z to MIL-PRF-55182/9 FEATURES • QPL product with established reliability (ER): meets requirements of MIL-PRF-55182/9  Temperature coefficient of resistance (TCR): ± 2 ppm/°C

V0195

Abstract: SMNH1
Contextual Info: SMNH Vishay Foil Resistors Bulk Metal Foil Technology 4 Resistor Surface Mount Hermetic Network with 0.5 ppm/°C TCR Tracking and 0.005 % Tolerance Match FEATURES • Temperature coefficient of resistance TCR : absolute: ± 2 ppm/°C typical (- 55 °C to + 125 °C,

marking NF

Contextual Info: 2SC5646 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applisations. TENTATIVE Features and applications • Low noise : NF=1.5dB typ f=2GHz . • High gain : | S21e | 2 =9.5dB typ (f=2GHz). • High cutoff frequency : fT=10GHz typ(VCE=1V).

RNC90Z

Abstract: vishay fscm 18612 Y1189 MIL-PRF-55182 MIL-PRF-55182/9 RNC90Y Z201
Contextual Info: Military and Space Established Reliability ER Vishay Foil Resistors Z-Bulk Metal Foil Technology RNC90Z to MIL-PRF-55182/9 FEATURES • QPL product with established reliability (ER): meets requirements of MIL-PRF-55182/9 • Temperature coefficient of resistance (TCR): ± 2 ppm/°C

RJ24

Abstract: 1260X MIL-PRF-39035
Contextual Info: 1260 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers, 3/8 Inch Square, RJ24 Style, Designed to Meet or Exceed the Requirements of MIL-PRF-39035, Char. H FEATURES • Temperature coefficient of resistance TCR : ± 10 ppm/°C (- 55 °C to + 150 °C ref. at + 25 °C);through

1240W

Abstract: 1240P
Contextual Info: 1240 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers, 1/4 Inch Square, RJ26 Style, Designed to Meet or Exceed the Requirements of MIL-PRF-39035, Char. H FEATURES • Temperature coefficient of resistance TCR : ± 10 ppm/°C. (- 55 °C to + 150 °C ref. at + 25 °C);

2SB1424

Abstract: Medium Power Transistor AER marking
Contextual Info: 2SB1424 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A   E E1  b1  1.BASE SOT-89  2.COLLECTOR  b L 3. EMITTER e1 FEATURES Dimensions In Millimeters Symbol Power dissipation

Contextual Info: CPH3115/CPH3215 PNP/NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers, Strobe lamps. Features • Adoption of MBIT process. • Large current capacity. • Low collector-to-emitter saturation voltage.

500R00

Abstract: 1240P 1240W
Contextual Info: 1240 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers, 1/4 Inch Square, RJ26 Style, Designed to Meet or Exceed the Requirements of MIL-PRF-39035, Char. H FEATURES • Temperature coefficient of resistance TCR : ± 10 ppm/°C. (- 55 °C to + 150 °C ref. at + 25 °C);

Contextual Info: 2SA2016/2SC5569 PNP/NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers, Strobe lamps. Features • Adoption of MBIT process. • Large current capacity. • Low collector-to-emitter saturation voltage.

Contextual Info: CPH3114/CPH3214 PNP/NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers, Strobe lamps. Features • Adoption of MBIT process. • Large current capacity. • Low collector-to-emitter saturation voltage.

Y1189

Abstract: RNC90Z
Contextual Info: Military and Space Established Reliability ER Vishay Foil Resistors Z-Bulk Metal Foil Technology RNC90Z to MIL-PRF-55182/9 FEATURES • QPL product with established reliability (ER): meets requirements of MIL-PRF-55182/9 • Temperature coefficient of resistance (TCR): ± 2 ppm/°C