AE4A Search Results

JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF

transistor af 126

Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

JESD22-A-103A

Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms

48V-to-12V

Abstract: smd TRANSISTOR marking T1
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3

Contextual Info: S P SPT7 8 6 f T 10-BIT, 40 MSPS,160 mW A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • All High-Speed Applications Where Low Power Dissipation is Required • Video Imaging • Medical Imaging

IPC 9701

Abstract: transistor marking JB
Contextual Info: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation + +

LMH6618

Abstract: LMH6618MK LMH6618MKE TSOT23 MARKING AE4A ae4a
Contextual Info: General Description Features The LMH6618 single, with shutdown and LMH6619 (dual) are 130 MHz rail-to-rail input and output amplifiers designed for ease of use in a wide range of applications requiring high speed, low supply current, low noise, and the ability to drive

JESD22-A-103A

Abstract: JESD22-A-104B JESD22-A113-B V048K020T080 JESD22-A108B
Contextual Info: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response V048K020T080 K indicates BGA configuration. For other mounting options see Part Numbering below.

MARKING AE4A

Abstract: LMH6618 LMH6619MAx LMH6618MK LMH6618MKE TSOT23
Contextual Info: LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers General Description Features The LMH6618 single, with shutdown and LMH6619 (dual) are 130 MHz rail-to-rail input and output amplifiers designed for ease of use in a wide range of applications requiring high

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF

Contextual Info: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response V048K015T100 K indicates BGA configuration. For other mounting options see Part Numbering below.

smd RO25

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

14bcm

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF

smd diode marking sG

Abstract: V048K015T80 JESD22-A-103A JESD22-A-104B SR-332 V048L015T80 P8095 SMD diode sg 46 SG 94 DIODE SMD
Contextual Info: V•I Chip – VTM Voltage Transformation Module TM V048K015T80 1 Vf = 32 - 57.6 V VOUT = 1.0 - 1.8 V IOUT = 80 A K = 1/32 ROUT = 1.5 mΩ max • 48V to 1.5V V•I Chip Converter • >92% efficiency at 1.5V • 80 A 120 A for 1 ms • 125°C operation • High density – up to 320 A/in3

IPC-9701

Abstract: JESD22-A-101
Contextual Info: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms

BCM reflow

Abstract: smd transistor marking SG smd transistor v2 IPC-9701
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3

mpga479

Abstract: intel 94v-0 MOTHERBOARD MANUAL M25N-2 MPGA479M M26N A139 E1 P22-R22 AB22-AB23 AB24-AB25 AF17-AF18
Contextual Info: Intel® Mobile Processor Micro-FCPGA Socket mPGA479M Design Guidelines November 2001 Revision 1.0 Order Number: 298520-001 mPGA479 Socket Design Guidelines, Rev 1.0 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

JESD-22-B103-A

Contextual Info: BCM V•I Chip – BCM Bus Converter Module TM B048K120T20 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3

SG 94 DIODE SMD

Contextual Info: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 90 A 135 A for 1 ms • 1 µs transient response V048K015T090 K indicates BGA configuration. For other mounting options see Part Numbering below.

Contextual Info: LMH6618,LMH6619 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Literature Number: SNOSAV7C LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers General Description Features The LMH6618 single, with shutdown and LMH6619 (dual)

JESD22-A-103A

Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K120T025
Contextual Info: PRELIMINARY VTM V048K120T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 12 V V•I Chip Converter • 125°C operation • 25 A 37.5 A for 1 ms • 1 µs transient response • High density – 1200 W/in3 K indicates BGA configuration. For other

Contextual Info: L M H 6 6 1 8 ,L M H 6 6 1 9 LMH6618 Single/LMH6619 Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers Texa s In s t r u m e n t s Literature Number: SNOSAV7C Sem iconductor LM H 6618 S in g le /L M H 6 6 1 9 Dual 130 M Hz, 1.25 m A RR IO O pera tio n al A m p lifie rs

Contextual Info: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF