AD 157 Y Search Results

BY251

Abstract: BY252 BY253 BY254 BY255 5CW MARKING
Contextual Info: E RoHS TAIWAN SEMICONDUCTOR 3.0 AMPS. Silicon Rectifiers DO-201 AD T C O M P L IA N C E - BY251 - BY255 32S- - 1.C Í25.-1I V N. .157 ^¿ij IÎA . F e atures_ ^ ❖ ❖ 4^ •> High efficiency, Low VF

Contextual Info: THIS DRAWING IS UNPUBLISHED. EW COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION 5 4 2 3 - ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 R E V IS IO N S P LTR 3.99 [.157] DESCRIPTION DATE DWN ji REVISED PER ECO -08-024946 140C T08

Contextual Info: SSMA H E R M E T IC A L L Y S E A L E D M IC R O S TR IP R E C E P T A C L E S SO LD ER MOUNT MIC RECEPTACLE .0 1 6 0 , 4 d ia . PA RT N U M BER Captive contact Installation IN SERIES AD APTO RS M A LE -M ALE .157 (4 )/ fla tS PART N U M BER . 8 5 0 (2 1 , 6 )

MQUAD

Contextual Info: DETAIL P 208 157 156 M 0.20 0.008 F H–J K B 0.20 (0.008) E H–J K AB –J– –H– 1 AC AC DETAIL P BASE METAL (D) 52 105 AD 53 104 –K– ÉÉÉÉ ÇÇÇ ÉÉÉÉ ÇÇÇ ÉÉÉÉ ÇÇÇ ÉÉÉÉ PLATING T AE A 0.20 (0.008) E H–J K SECTION AC–AC

Contextual Info: l i t e SMDF151 thru 157 . » : : i SEM ICONDUCTORS VO LTAG E RANGE 50 to 1000 Volts CURRENT 1.5 Amperes ♦ SMDF ê a — 4- .310 17.9 r FEATURES • R a tin g to 1 0 0 0 V P R V • S u rg e o v e rlo ad ratin g to 3 0 A m p e re s peak. • Ideal fo r p rin te d c irc u it b oard

54als157

Abstract: 74als15
Contextual Info: T YP E S S N 5 4 A L S 1 5 7 , SN54ALS158, S N 5 4 A S 15 7, SN54AS158 S N 7 4 A L S 1 5 7 , S N 74 A L S 15 8 , S N 7 4 A S 1 5 7 , SN 74AS 15 8 Q U AD R UPLE 1 OF 2 D A T A SELECTORS/M ULTIPLEXERS 0 2 6 6 1 , APRIL 1 9 8 2 —REVISED DECEMBER 1 9 8 3 •

u830

Abstract: 7447 structure U620 U700 7939W 444-618 7400 series 7647 diode 7449 u700 datasheet
Contextual Info: 7000 SERIES ROCKER AND PADDLE SWITCHES Overview 7 C Number of poles SERIES 3 4 Terminals Single pole Double pole Blank W Consult factory for three and four pole models. WW Y Y4 Y6 Y7 Z } } } } Solder lugs or straight PC depending on model Right angle, horizontal mounting

M60U2R2M250

Contextual Info: I M60 Series Multilayer Ceramic Capacitors M allor Y GENERAL SPECIFICATIONS D issip atio n Factor: 2 . 5 % M a xim u m Ultra H igh Insulation R e sis ta n c e an d W ithstand V oltage V o ltag e R an ge : 2 5 ,5 0 ,1 0 0 ,2 5 0 V D C Insulation R e sista n ce :

Contextual Info: SI-07 0 ,4 mmS O C K E T/TE R M IN A L IKiK4 SPECIFICATIONS wi Insulator Material: High Temp Nylon Contact Material: BeCu Plating: Au over 50m" 1.27pm Ni Operating Temp Range: -55°C to+125°C RoHS Compliant: Yes BODY HEIGHT POSITIONS PER ROW For complete specifications

s12w

Abstract: PDC 140M PLP-21.4 S-40W s40w T560N T1-1-KK BA25L
Contextual Info: Model Index D o t in d ic a t e s s u r fa c e m o u n t m o d e ls . mixers m odel A D E 'l . ADE-l A S K . AD E-l H . A D E -IH W . AD E-l L . A D E 'l LH . A D E 'IL H W .

SOT225

Abstract: RGB15 Philips SAA713 CCIR-656 RGB24 SAA7145 87AD "Overflow detection" RGB16
Contextual Info: Philips Semiconductors Preliminary specification Multimedia PCI bridge SAA7145 accordance with CCIR-656 D1 or as a 16-bit port for backward compatibility with DMSD2. The DMSD2 format has luminance (Y) data on one 8 bit port and chrominance (U&V) data time multiplexed

Contextual Info: LITEM?I SEMICONDUCTORS SR850 thru SR856 I 3 VO LTAG E RANGE 5 0 to 6 0 0 V o lts A M P S . S O F T R E C O V E R Y R E C T IF IE R S CURRENT 3.0 Am peres I DO-201 AD FEA TU RES • L o w cost • L o w leakage • L o w fo rw ard voltage drop • High current capability

157YH

Contextual Info: 5.08mm 0.2" Pin Housing FEATURES YH Series SPECIFICATIONS 4 Circuits Current Rating. Post: Voltoge Rating: 9 ro s s , C op p e r-U n d e rc o o te d . Tin /Le ad — Plated Water: Nylon, UL 9 4 V - 0 3A AC DC 2 5 0 V AC M axim um Temperature Range: C ontoct Resistance:

U12-10

Abstract: U2900 18235WW U2510 datasheet for AD 620 SQ U840 diode 18235Y U1210 U900 X624
Contextual Info: 18000 series Snap-action momentary pushbutton switches Distinctive features and specifications ❑ Panel and PC mount models ❑ Snap-in panel mounting version ❑ Tactile feedback B ELECTRICAL SPECIFICATIONS • Max. current/voltage rating with resistive load :

BA159

Abstract: BA157 BA158
Contextual Info: E TAIWAN SEMICONDUCTOR B A 1 5 7 - B A 159 1.0 AMP. Fast Recovery Rectifiers tò RoHS DQAl C O M P L IA N C E J V T tL •ÌD7i^.7> .060 12.0/ l.ft ¡2S.4J MIN. Otó! Features -v-0-v-0■fr H ig h e ffic ie n c y , L o w V F H ig h c u rre n t c a p a b ility

Contextual Info: APT8015JVR A dvanced P o w er Te c h n o l o g y 800V 44A 0.150Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT10025JVR A dvanced P o w er Te c h n o l o g y 1000V 34A 0.250Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PRO PR IETA RY' TD BEL FUSE INC. AND SHALL NDT BE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. LEIDl PDLAR ITY PIN 13 - PIN 14 COLDR + YELLDW LED2 POLARITY PIN 15 - - ELECTRICAL

Contextual Info: IDT74FST3125 4-BIT BUS SWITCH ï r t e g i a t e d D e v iæ T e c h n o lo g y , ]n c The FST3125 belong to IDT's fam ily of Bus switches. Bus switch devices perform the function of connecting or isolating tw o ports w ithout providing any inherent current sink or source

Rectifier Tubes

Abstract: ML120 "Rectifier Tubes" ML103 Scans-0017250
Contextual Info: H IG H -V O LTA G E RECTIFIERS PAGE 1 IS S U E D 1-57 <gÂCHLfT£> HIGH-VOLTAGE INDUSTRIAL RECTIFIER TUBES M L-1 0 3 , M L-108, ML-115, M L-1 2 0 M L-121, M L-1 7 0 , M L-18 0 D E S C R I P T IO N & R A T IN G S D E S C R IP T IO N depending upon the tube type. D esign and process features

Contextual Info: A P T 50 M 50JV F R A dvanced W 7Æ P o w e r Te c h n o l o g y soov 77a 0.0500 POWER MOSV iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

ts06 94V0

Abstract: GDH04 ADE02 ADE03 ADE04 ADE06 ADE08 ADE09 ADE10 ADF02
Contextual Info: A GD Series - Page A3 AD Series - Page A7 S Series - Page A11 DPU Series - Page A12 TS Series - Page A16 MRD Series - Page A17 DRD Series - Page A19 DRS Series - Page A27 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover

BENDIX 14S-6

Abstract: bendix 24-12 Bendix 16s-1 BENDIX "10 pin" male BD 509 amphenol G 3264 PFC 3843 contact size 8 8-4 BENDIX MS3057C
Contextual Info: Amphenol GT Series Reverse Bayonet Coupling Connectors 12-024-8 Ruggedized Connector Series for Rail/Mass Transit and other Harsh Environments AMPHENOL CORPORATION Amphenol Industrial Operations 40-60 Delaware Avenue Sidney, New York 13838-1395 Phone: 800-678-0141 or 607-563-5011

Power Connectors

Abstract: 12-024 bendix 22-12 BENDIX 14S-6 10-597160-15D 10-597109-33D 10-597160-16D Radsok GT07R 10-581806-000
Contextual Info: Amphenol GT Series Reverse Bayonet Coupling Connectors 12-024-8 Ruggedized Connector Series for Rail/Mass Transit and other Harsh Environments AMPHENOL CORPORATION Amphenol Industrial Operations 40-60 Delaware Avenue Sidney, New York 13838-1395 Phone: 800-678-0141 or 607-563-5011