ACP 47K Search Results

Transistor BC 457

Abstract: MCH185A100JK MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R
Contextual Info: SPA-1526Z Preliminary SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar

Transistor BC 457

Abstract: SOF-26 SPA1426Z POWER TRANSISTOR MCH185CN104KK TAJA105K020R bc 457 Transistor MCH185A221JK -1426Z
Contextual Info: SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier SPA-1426Z Preliminary 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RoHS Compliant and Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar

bc 303 transistor

Abstract: LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z
Contextual Info: Preliminary SPA-1426Z Product Description Sirenza Microdevices’ SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

spa1526

Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

Transistor BC 457

Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z
Contextual Info: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs

SPA1426Z

Abstract: TAJA105K020R
Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs

ML200D

Abstract: 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK
Contextual Info: Preliminary SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

MCH185A100JK

Abstract: 1000PPM
Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

SPA-1426

Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK
Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs

Transistor BC 457

Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
Contextual Info: SPA-1526Z SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1526Z is made with InGaP-on-GaAs

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs

MCH185A100JK

Abstract: transistor Bc 540 pin transistor Bc 540
Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

SPB-2026Z

Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
Contextual Info: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated

SPB-2026

Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Contextual Info: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

CMX998

Abstract: RF5110G ev9810 cmx981 CMX998 Calibration CMX981 dqpsk modulation tetra EV9980 TMS320VC5510 EV9810 PE0001
Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX998 with an RF5110G Power Amplifier Publication: AN/TwoWay/CFBL/998/1 January 2007 1 Introduction This document is intended as an aid to customers developing linear transmitters using the CMX998 integrated circuit[1] by demonstrating a typical ‘Cartesian Loop’ transmitter solution

Contextual Info: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated

SPB2026Z

Abstract: SPB2026ZSR
Contextual Info: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features GaAs HBT p GaAs MESFET     Applications V c c = 5V Functional Block Diagram SiGe BiCMOS 

SPB2026Z

Abstract: SPB-2026Z SPB-2026 SPB-2026Z-EVB3 ML200D SOF-26 spb2026zevb3 0.7GHz to 2.2GHz InGaP AMPLIFIER 1805-1880MHz power amplifier EDS-105436
Contextual Info: SPB-2026Z SPB-2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar

ML200C

Abstract: 7-27GHz ER39 SPA1526Z bc 303 transistor
Contextual Info: Advanced Information SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

OV7740

Abstract: RE200B OmniVision CMOS Camera Module ov7740 Omnivision ov7740 CMOS image sensor JPEG PIR based human motion DETECTOR CIRCUIT DIAGRAM passive Infrared motion detector Sensor Pir RE200B RE200B nicera AT91SAM3S-LQFP100
Contextual Info: Passive InfraRed Reference Design PIRRD for SAM3S Motion Detector Camera 1. Scope This application note provides detailed directions and instructions to both hardware and software engineers building a low cost, yet powerful, Passive InfraRed Motion Detector Camera as found in building or home alarm and monitoring systems. The reference design is based on the SAM3S4C device.

IC 7412

Abstract: 4fsk 4fsk modulation 4FSK modem IF
Contextual Info: CMX7143 CML Microcircuits Multi-Mode Wireless COMMUNICATION SEMICONDUCTORS Data Modem DATASHEET D/7143_FI2.0/2 December 2007 Advance Information FI-2.x 4FSK Packet Data Modem Features • Flexible bit rates • Multiple modulation types o FI-1.0: GMSK/GFSK modulation

CA9H-10K

Abstract: CA9H ca9h-1k CA9H-47K acp 100k
Contextual Info: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 BepTMKanbHbie noACTpoenHbie p e 3 M C T o p b i cepM M C A 9 H 9 mm. nMHeMHaa 5x2,5 mm 0,15 Bt 200 B ±20% ( b f lM a n a 3 0 H e 1 MO m -5 MO m ±30%) OT-25°CflO +70°C 240 ±5° n o f l C T p o e H H u e y m e p o f lM C T b i e p e 3 M C T o p b i C T a H fla p T a