ACE8601B Search Results
ACE8601B Datasheets Context Search
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Contextual Info: ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE8601B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is |
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ACE8601B ACE8601B |