ABE PACKAGE MARKING INFORMATION Search Results
ABE PACKAGE MARKING INFORMATION Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
ABE PACKAGE MARKING INFORMATION Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data Sheet, Rev. 1.2, Dec. 2012 TLE8209-2 SPI Programmable H-Bridge Automotive Power TLE8209-2 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 |
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TLE8209-2 | |
TLE8209
Abstract: TLE8209-2SA IC HS 8108 power supply IC HS 8108 tle8209-2 abe 810 PG-DSO-20-37 tle8209-1 LS 7313 S tle8209 1E
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TLE8209-2SA TLE8209 TLE8209-2SA IC HS 8108 power supply IC HS 8108 tle8209-2 abe 810 PG-DSO-20-37 tle8209-1 LS 7313 S tle8209 1E | |
Contextual Info: Data Sheet, Rev. 1.1, Oct. 2012 TLE8209-4SA SPI Programmable H-Bridge Automotive Power TLE8209-4SA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 |
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TLE8209-4SA | |
Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TDA3 SPRT704A – OCTOBER 2014 – REVISED OCTOBER 2014 TDA3x SoC Processors for Advanced Driver Assist Systems ADAS Technical Brief 1 Device Overview 1.1 Features • Architecture Designed for ADAS Applications |
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SPRT704A 1920x1080p, C674x 16-bit | |
MSC 5518Contextual Info: TLE 8718 SA Smart 18-Channel Lowside Switch with Micro Second Bus Data Sheet Rev. 1.1, 2012-07-31 Automotive Power TLE 8718 SA Table of Contents Table of Contents 1 1.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 |
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18-Channel MSC 5518 | |
TWDALM3LT
Abstract: TWDLCAE40DRF manual TWDLCAA40DRF TWD NAC 485T twido modbus addresses TWDNOZ485D telemecanique overload relay DATA SHEET ABL7RE2405 telemecanique TSX 27
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40DRF, 1-888-SquareD DIA3ED2041102EN-US TWDALM3LT TWDLCAE40DRF manual TWDLCAA40DRF TWD NAC 485T twido modbus addresses TWDNOZ485D telemecanique overload relay DATA SHEET ABL7RE2405 telemecanique TSX 27 | |
Contextual Info: Not Recommended For New Designs bq4842Y RTC Module With 128Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4842Y RTC Module is a nonvolatile 1,048,576-bit SRAM organized as 131,072 words by 8 bits with |
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bq4842Y 128Kx8 576-bit | |
Contextual Info: Not Recommended For New Designs Added bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with |
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bq4832Y 32Kx8 144-bit | |
TWDLCAE40DRF manual
Abstract: TWDLCDE40DRF TWDLMDA20DTK twdlmda20drt MANUAL TWDLMDA20DRT TWDLCA24DRF TWDLCAE40DRF TWDLCDA40DRF twido TWDLCAE40DRF TWDLCAA40DRF
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Contextual Info: Not Recommended For New Designs bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with |
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bq4852Y 512Kx8 10-year 304-bit | |
Contextual Info: Not Recommended For New Designs bq4842Y RTC Module With 128Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4842Y RTC Module is a nonvolatile 1,048,576-bit SRAM organized as 131,072 words by 8 bits with |
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bq4842Y 128Kx8 576-bit | |
Contextual Info: Not Recommended For New Designs bq4842Y RTC Module With 128Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4842Y RTC Module is a nonvolatile 1,048,576-bit SRAM organized as 131,072 words by 8 bits with |
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bq4842Y 128Kx8 576-bit | |
1N5817
Abstract: HMNR1288D MBRS120T3 AL-10M
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HMNR1288D 128Kb 128Kbit 1N5817 MBRS120T3 AL-10M | |
1N5817
Abstract: HMNR1288D MBRS120T3 AL-10M
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HMNR1288D 128Kb 128Kbit 1N5817 MBRS120T3 AL-10M | |
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C7021
Abstract: PT600T C7035
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DG-953054 44tl/ PT60C C7021 PT600T C7035 | |
Contextual Info: Not Recommended For New Designs Added bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with |
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bq4832Y 32Kx8 10-year 144-bit | |
Contextual Info: Not Recommended For New Designs bq4842Y RTC Module With 128Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4842Y RTC Module is a nonvolatile 1,048,576-bit SRAM organized as 131,072 words by 8 bits with |
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bq4842Y 128Kx8 10-year 576-bit | |
Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized |
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bq4822Y 10-year | |
marking abf
Abstract: fs4a ABG marking code ABB100 SMC/PT100 ABB datasheet
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DO-214AB 2002/95/EC 2002/96/EC J-STD-020, DO-214AB MIL-STD-750 J-STD-002 JESD22-B102. Feb-12 marking abf fs4a ABG marking code ABB100 SMC/PT100 ABB datasheet | |
BD4822Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized |
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bq4822Y 536-bit BD4822 | |
Contextual Info: Not Recommended For New Designs bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with |
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bq4852Y 512Kx8 304-bit | |
FIR31
Abstract: D-12VDC
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OCR Scan |
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Contextual Info: bq4845/bq4845Y Parallel RTC With CPU Supervisor General Description Features ➤ Real-Time Clock counts seconds through years in BCD format ➤ On-chip battery-backup switchover circuit with nonvolatile control for external SRAM ➤ Less than 500nA of clock operation current in backup mode |
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bq4845/bq4845Y 500nA bq4845 100-year 28-pin | |
Contextual Info: TMS320C6412 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS219J April 2003 − Revised October 2010 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments |
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TMS320C6412 SPRS219J SPRS219I SPRS219J |