AA04A Search Results

merlin gerin fuse

Abstract: IR 2544S MICRO FUSE-LINKS 1608 TYPE HRC fuse gg GEC MGI1252 THERMAL Fuse m20 tf 115 c smd marking 1pn ns 1000 n merlin gerin microtemp g4a01
Contextual Info: 2189 Technical portal and online community for Design Engineers - www.element-14.com Fuses & Circuit Breakers Page 10x35mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 10x38mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 14x51mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . .

MPC821

Contextual Info: MPC8BUG USER'S MANUAL MPC8BUG SOFTWARE USER'S MANUAL FOR THE MPC821ADS APRIL 27, 1996 SOURCE REVISION 0.6 1 MPC8BUG USER'S MANUAL 2 MPC8BUG USER'S MANUAL CHAPTER 1 MPC8BUG OVERVIEW 1 . 1 INTRODUCTION This document describes the monitor debugger for the Motorola MPC821 processor device. This

TGI1314-50L

Abstract: TOSHIBA HEMT
Contextual Info: MICROWAVE POWER GaN HEMT TGI1314-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Draft FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 13.75GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI8596-50

Abstract: TGI8596
Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TGI1414-50L

Abstract: TOSHIBA HEMT
Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI7785-25L

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-25L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=44.5dBm at Pin=35.0dBm „ HIGH GAIN GL=12.0dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI1314-50L

Contextual Info: MICROWAVE POWER GaN HEMT TGI1314-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Draft FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 13.75GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI1414-50L

Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

MPC860

Abstract: MPC8Bug
Contextual Info: MPC8BUG USER'S MANUAL JANUARY 1998 TABLE OF CONTENTS Paragraph Title Page Section 1 MPC8BUG Overview 1.1 Introduction . 5 1.2 Features . 5

TGI7785-50L

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=40.0dBm „ HIGH GAIN GL=11.0dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI0910-50

Contextual Info: MICROWAVE POWER GaN HEMT TGI0910-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 9.5GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

MPC801

Abstract: MPC821 MPC823 MPC850 MPC860 MPC860SAR 4000 SERIES MOTOROLA MPC8Bug
Contextual Info: 1.1 1.2 2.1 2.2 3.1 3.2 3.3 4.1 4.1.1 4.1.2 Section 1 MPC8xx MPC8BUG Overview Introduction . 3 Features . 3

TGI1414-50L

Abstract: TOSHIBA HEMT 1.5
Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI8596-50

Abstract: TOSHIBA HEMT 41dBm
Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

MPC860

Abstract: 860ADS
Contextual Info: MPC8BUG USER'S MANUAL MPC8BUG USER'S MANUAL APRIL 27, 1996 REVISION 0.6 1 MPC8BUG USER'S MANUAL CHAPTER 1 MPC8BUG OVERVIEW 1 . 1 INTRODUCTION This document describes the monitor debugger for the Motorola MPC860 PowerQUICC processor device. This debugger runs on a host machince such as an IBM-PC or Sun and controls the