AA BATTERY Search Results

Battery holder

Abstract: aa battery
Contextual Info: 8 “AA” Battery Holder with Solder Tabs 12BH383D-GR Date Last Revised: 04-20-10 57.8±1 2.28 ±.039 1.5V 63±1 (2.48±.04) SIZE “AA” or EQUIV 1.5V or UM-3X8 1.5V 1.5V SOLDER 2 (.08) ø2.5(ø.098) R1.5 28.5±.50 (1.12±.04) 7.8 (.31) 8.9 (.35) SOLDER

DLL21

Contextual Info: »^yU iH Îiû ntÜ [ DLL 21 Tw in power pentode Penthode de sortie double Doppelendpenthode H eating: d irect, by battery cu rren t, rectified a ltern a tin g m ain s cu rren t or D.C. m ain s cu rren t, parallel or series fila m e n t supply. C h au ffag e: d irect par

leaf spring design

Contextual Info: M55 Sect 1 v8-08:M55 Sect 1 final 1/20/09 11:10 AM Page 9 SPRING & BUTTON CONTACTS For “AAA” • “AAAA” • “N” • “12V” • Economical and reliable contacts are ideal for molded cases with self contained battery compartments • Single and dual contact designs available for “AAA”, “AAAA”, “N” & “12V” size batteries

A29L400

Contextual Info: A29L400 Series 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications - Regulated voltage range: 3.0 to 3.6 volt read and write

Contextual Info: Complies with Directive 2002/95/EC RoHS Product Overview TXC101 is a highly integrated single chip, multi-channel, low power, high data rate RF transmitter designed to operate in the unlicensed 315/433/868 and 915 MHz frequency bands. All critical RF and baseband functions are

dll21

Abstract: LB 1200U
Contextual Info: DLL 21 DLL max 36 D ouble output pentode In many instances the output stage of a battery receiver, especially where a fairly large output is required, will consist of two triodes or pentodes or, alternatively, a double triode or pentode in a pushpull circuit: in order to keep the anode current as low as possible,

Contextual Info: HN62444B Series Preliminary 4M 256K x 16-bit Mask ROM • DESCRIPTION The Hitachi HN62444B is a 4-M egabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16 bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and

Contextual Info: EEPROM Austin Semiconductor, Inc. AS8ER128K32 PLEASE NOTE: An EOL notice was issued on this product in 2001. However, ASI has a large amount of die inventory available. For assistance, please contact your local sales representative. End O f Life AS8ER128K32

Memory

Abstract: S29AL032D SP VBN048 S29AL A0-A21 S29AL032D
Contextual Info: S29AL032D 32 Megabit CMOS 3.0 Volt-only Flash Memory 4 M x 8-Bit Uniform Sector 4 M x 8-Bit/2 M x 16-Bit Boot Sector ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development

Contextual Info: ISSI IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

kck capacitor

Abstract: DIODO LED tlu 011 QQQ0443 FM MICROPHONE
Contextual Info: CL ft> 3 03 3 O *t ON 3 2. o 3 CHIP SYSTEMS n r i n n n n n n n a PCT 14 OnChip Systems. Inc. - I? f l S 3 •O 5. 2 -â 13 <0 - i în O »S “ ►S 0> 3 * ST 0 s§ o T 7S -07-I5 2 S s 5* tt ST 0 o ^ U U U LTU U U LT'U TT * a o ON CHI P S Y S T t r i S

W22C

Abstract: S12301DS 5133S stp520 t12m256 T12M256A-12J UPC507 MITAC PC515 GP014
Contextual Info: MODEL : 5133S Revision 02A Table of Contents page 1 Cover Sheet Block Diagram 2 Central Processor Unit 3 North Bridge Part A & PBSRAM/TAG RAM 4 North Bridge Part B 5 System Memory 6 South Bridge 7 PCMCIA Controller & Socket 8 Audio Codec & Amplifier 9 Enhance IDE & FDD Connector

PG9SB

Abstract: pk582 PG11-SBPA 80.113 80.107 Back sc23 86.506 ACCL-1 Pg9, Pg11, Pg13.5, Pg16, Pg21, Pg29 PG16-SBPA
Contextual Info: NEXT FIND IT ACCESSORIES 9V Battery Clip This accessory is available for all enclosures with a 9V battery compartment. The clip comes with a 150 mm 5.91 in. long cable. Type AC-AB9 Cat. No. Std. Pk. 94.752 10 Cat. No. Std. Pk. 94.755 1 Cat. No. Std. Pk.

Contextual Info: H I T A C H I / LOGIC/ARRAYS/nEM HN624316N Series- - Preliminary SI E D • 4 4 clb5D3 00 177 75 0T2 ■ H I T 2 16M 1M x 16-bit and (2M x 8-blt) Mask ROM ■ T -46-13-15 DESCRIPTION The Hitachi HN624316N is a 16-M egabit CMOS Mask

Contextual Info: TVP5150APBS Ultralow Power NTSC/PAL/SECAM Video Decoder With Robust Sync Detector Data Manual September 2003 HPA Digital Audio Video SLES087 Contents Section 1 2 Title Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Advance Information CAT3200, CAT3200-5 Low Noise Regulated Charge Pump DC-DC Converter FEATURES • Constant high frequency 2MHz operation ■ Thermal overload shutdown protection ■ 100mA output current ■ Low value external capacitors (1µF) ■ Regulated output voltage (5V fixed CAT3200-5,

HN62428P

Contextual Info: H I TA C H I / L O G I C / A R R A Y S / M E 11 SIE » • M M T b SO B D01 7 73 ñ IBS HN62428 Series- Preliminary - T - H 4 - IS M S ’ 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62428 Series is an 8-Megabit CMOS Mask

Contextual Info: HITACHI/ LOGIC/ÂRRÂYS/HEH SIE » 44^503 Ü Ü 1 7 7 3 1 Ô7D IHITS HN62418 Series-T-46-13- 1 5 8M 512K x 16-bit and (1M x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62418 Series is an 8-Megabit CMOS Mask Programmable Read Only Memory organized either as 524,288 x

Contextual Info: TS\ ì?4 High-Performance CMOS Two-Channel 5PST Switch Semiconductor , I nc . q s 4a h o q FEATURES GENERAL DESCRIPTION • Low on-resistance: rDS on = 5i2 • Wide bandwidth: 1,8GHz (-3dB point) • Crosstalk: -1 OOdB @ 50KHz, -7 0 d B @ 5MHz, -5 5 d B @ 30MHz

HM5164165F

Abstract: HM5164165FJ-5 HM5164165FJ-6 HM5164165FLJ-5 HM5164165FLJ-6 HM5165165F HM5165165FJ-5 Hitachi DSA00205
Contextual Info: HM5164165F Series HM5165165F Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh ADE-203-1058A(Z) Rev. 1.0 Oct. 5, 1999 Description The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304word × 16-bit. They have realized high performance and low power by employing CMOS process technology.

Ks-7b

Contextual Info: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

Contextual Info: M È k C M O S STATIC RAM 6 4 K 6 4 K x 1 -BIT IDT7187S IDT7187L Integrateci D eviceTechnology. Inc FEATURES: DESCRIPTION: • The ID T7187 is a 65,536-bit h ig h -s p e e d sta tic RAM organized as 64K x 1. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-reliabllity te c h n o lo g y , C E M O S . A c ce ss tim e s as fast as 15ns are available