AA 100 Search Results

NX7526BF-AA

Abstract: NX7526BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well

TCXO 40MHz

Abstract: AA-XADXXX 0637B
Contextual Info: CRYSTAL OSCILLATORS Data Sheet 0637B Rev. B LVDS TCXO/TCVCXO AA-XADXXX Series Description The AA-XADXXX Series of quartz crystal oscillators provide excellent temperature stability with LVDS complementary outputs. The device is packaged in a miniature, low profile leadless FR4

Contextual Info: CRYSTAL OSCILLATORS Data Sheet 0637B Rev. J LVDS TCXO/TCVCXO AA-XADXXX-X Series Description The AA-XADXXX Series of quartz crystal oscillators provide excellent temperature stability with LVDS complementary outputs and very low phase noise. The device is packaged in a miniature,

NX7529BB-AA

Abstract: NX7529BB-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7529BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 20 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 40 mW at IFP = 400 mA, NEC's NX7529BB-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate

FPM21500QFN

Abstract: 22nH 33PF
Contextual Info: EB21500QFN-AA FPM21500QFN 1.7 - 2.0GHz LNA EVALUATION BOARD FEATURES Measured @ 1.85GHz • 29 dBm Output Power • 16.5 dB Small Signal Gain • 0.60 dB Noise Figure • 38 dBm OIP3 measured @ Pout = 12dBm per tone ● Bias 4V, 100mA DESCRIPTION AND APPLICATIONS

Contextual Info: MIC5210 Dual 150m A LDO R egulator Preliminary Information General Description Features The MIC5210 is a dual linear voltage regulator with very low dropout voltage typically 10mV at light loads and 140mV at 100m A , very lowground current (225|aA at 10m Aoutput), and

IXFN170N10

Abstract: 170N10 125OC IXFK170N10
Contextual Info: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C

T7213

Contextual Info: Preliminary Data Sheet January 1995 ' • -aa A T b T " m i * Microelectronics ATT2MD01 100VG/1 OBase-T MAC and EISA/ISA System Interface CMOS Integrated Circuit Features and Benefits ■ Supports the proposed IEEE* 802.12 100VGAnyLAN specification. — Enables 100 Mbits/s transmissions over

Contextual Info: MIC5207 180mA Low-Noise LDO Voltage Regulator General Description Features The MIC5207 is an efficient linearvoltage regulatorwith ultralow-noise output, very low dropout voltage typically 17mV at light loads and 165mV at 150mA , and very low ground current (720|aA at 100mA output). The MIC5207 offers better

Contextual Info: A SPC AA.015 Type No. Inches 1435 1436 1437 1438 1439 1440 0.258 0.363 0.493 0.613 0.739 0.991 BA.015 Description (Inches) 0.389 0.507 0.678 0.817 0.966 1.274 B 1/4" Black Polyethylene Slit Loom - 100' spool 3/8" Black Polyethylene Slit Loom - 100' spool

CM75TF-12H

Abstract: m4 12h igbt mitsubishi cm75tf-12h
Contextual Info: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

F-51320GNY-LY-AA

Abstract: 1565DBB NTD-20526
Contextual Info: First Edition Mar 16, 2001 OPTREX LCD Module Technical Specification Final Revision * Type No. F-51320GNY-LY-AA Approved by Production Div. Checked by (Quality Assurance Div.) Checked by (Design Engineering Div.) Prepared by (Production Div.) Table of Contents

2C3440

Contextual Info: NPN Power Transistor Chips 2C3440 r CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 7 Mils Nominal E = Emitter Pad .007 x .0065

TLRC124

Contextual Info: TOSHIBA TLRC123.TLRC124,TLRC125 TOSHIBA LED LAMP G aAÍAs RED LIGHT EMISSION TLRC123, TLRC124, TLRC125 PANEL CIRCUIT INDICATOR • • • STRIKING-BRIGHT All Plastic Mold Type TLRC123 Red Transparent Lens TLRC124 Red Lusterless Lens TLRC125 Colorless Clear Lens

Contextual Info: o> AA0„25 oo E± 0.1 LO CL o V I— OJ o ^1“ 2.77A0.05 Al 01 .04 TAP fi u CO xh NOTE: A -A-A- -AA- CURRENT — M - A 4 — - RATING: io INSULATION o CONTACT Al O 250 VAC. 2. Cl to I— RESISTANCE: SPECIEICATIGNS CONTACT AMP CN CL RESISTANCE: 1000

Contextual Info: PLCC SOCKETS ADAM TECH PLASTIC LEADED CHIP CARRIER SOCKET THROUGH HOLE ADAM TECHNOLOGIES INC. PLCC SERIES INTRODUCTION: Adam Tech PLCC Sockets accept plastic leaded chip carriers conforming to EIA/JEDEC standards In registration M 0-047, AA through AH. They convert the .050" chip centerlines to throughboard leads on a .100" centerline grid. Our special contact design

5334S

Abstract: PG5334S PR5334S
Contextual Info: 5334S Series Single Color φ5 Round Shape Type Features φ5 Round shape type, Package EBG/BG,EPG/PG : Green Diffused epoxy EPY/PY,EAY/AY : Yellow Diffused epoxy EAA/AA : Orange Diffused epoxy EVR/VR,EBR/BR,PR : Red Diffused epoxy Product features Dominant wavelength

BL-B2121

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-B2121-AA SINCE 1981 ● Features: ● Package dimensions: 1. Chip material: GaP/GaP 2. Emitted color : Green 3.80 .150 3. Lens Appearance : Green Diffused 4. Low power consumption. 3.00(.118) 5. High efficiency. 6. Versatile mounting on P.C. Board or panel.

Contextual Info: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225|aA at 20mA output current), and

43N60

Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings

Contextual Info: TLYH262 TOSHIBA TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR • 3.1mm DIAMETER T l • InG aA fP YELLOW LED • All Plastic Mold Type. • Colorless Clear Lens • InGaAfP YELLOW LIGHT EMISSION TLYH262 U nit in mm Low Drive Current, High Intensity Yellow Light Em ission

TL-4903

Abstract: TL4903 TL490
Contextual Info: MODEL TL-4903 International size reference: AA, ER14505 TECHNICAL DATA Typical values @+25ºC for batteries stored for one year or less Nominal capacity @ 1 mA, to 2 V 2.4 Ah Rated voltage 3.6 V Maximum recommended continuous current 60 mA Maximum 1 sec. pulse capability

Contextual Info: □IXYS DSE119-06AS Preliminary Data 20 A ^FAVM Fast Recovery Epitaxial Diode FRED vrRRM 600 V t 35 ns TO-263 AA V v RSM V v RRM 600V 600V Symbol A Type Test Conditions 25 20 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 100 110 A A TVJ = 150°C

Contextual Info: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100