A9A10 Search Results

HM62V16258B

Contextual Info: HM62V16258B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6A5 A8 A9A10A11A12MSB • • CS LB UB

HM62V16256B

Contextual Info: HM62V16256B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6 A5 A8 A9A10A11A12MSB • • CS2 CS1

row decoder

Abstract: transistor a13 A15 -5Y13 A18 transistor A8 diode diode a3 diode a7 HM621400HC
Contextual Info: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generater 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS 4 CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18

diode a3

Abstract: transistor a13 HM621400HC
Contextual Info: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generator 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18

HM62W16258B

Contextual Info: HM62W16258B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6A5 A8 A9A10A11A12MSB • • CS LB UB

HM62W16258BI

Contextual Info: HM62W16258BI Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control • • Column decoder I/O15 LSB A7 A6A5 A8 A9A10A11A12MSB • •

A4 diode

Abstract: diode a17 diode a3 transistor A10 HM62W16256B A9A10A11
Contextual Info: HM62W16256B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6 A5 A8 A9A10A11A12MSB • • CS2 CS1

Contextual Info: H I m i c I u c t o r In c Q u ic k S w itc h P ro d u c ts q s 32 x v h 245 3.3V 16-Bit Bus Switch for Hot SwaP Applications HotSwitch FEATURES/BENEFITS DESCRIPTION • The QS32XVH245 HotSwitch 16-bit bus switch is specially designed for hot-swapping environment.

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

Contextual Info: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

Hitachi DSA00176

Contextual Info: HM62V16256B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-334C (Z) Rev. 2.0 ’99. 10. 14 概要 HM62V16256B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を 採用し，高密度，高性能，低消 費電力を実現しております。し たがって，HM62V16256B シ

Hitachi DSA00176

Contextual Info: HM62W16256B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-335C (Z) Rev. 2.0 ’99. 10. 14 概要 HM62W16256B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を採用し，高密度，高性能，低消費電力を実現しております。したがって HM62W16256B シリ

Hitachi DSA002746

Contextual Info: HM62W16256B Series 4 M SRAM 256-kword x 16-bit ADE-203-934B (Z) Rev. 1.0 March 8, 1999 Description The Hitachi HM62W16256B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16256B Series has realized higher density, higher performance and low power consumption by

PSEU

Contextual Info: A WM0 G1 21 DO 8192 x 8-BIT PSEUDOSTATIC RAM • JEDED JC-42 Standard Pinout ■ Synchronous and Asynchronous Versions ■ Single-Step Capability ■ Fully Integrated On-Chip Refresh ■ Two-Line Data Bus Control ■ On-Chip Signal Arbitration ■ Single +5V ±1 0 % Supply

Hitachi DSA002753

Contextual Info: HM62Y16258B Series 4 M SRAM 256-kword x 16-bit ADE-203-1031B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62Y16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62Y16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS

Contextual Info: QuickSwitch Products & U O O R IN C qs32xvh 245 3.3V 16-Bit Bus Switch , o r H o t S w a P Applications HotSwitch FEATURES/BENEFITS DESCRIPTION • The QS32XVH245 HotSwitch 16-bit bus switch is specially designed for hot-swapping environment. The QS32XVH245 has very low ON resistance

Contextual Info: MPU 830 MPU 831 STANDARD MICROSYSTEMS CORPORATION, PRELIMINARY MPU 830 ROM I/O Device MPU 831 I/O Device FEATURES □ □ □ □ □ □ □ □ □ PIN CONFIGURATION Variable Power Supply: 2.4V-6.0V Pin-Compatible With NSC830/NSC831 Three Programmable I/O Ports

QS3R245

Abstract: millipaq package C2259 QS34XR245 QS34XR245Q3
Contextual Info: m QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-pit Low Resistance MultiWidth pus Switches Q uality S em ic o n d u c to r , I n c . ADVANCE INFORMATION DESCRIPTION FEATURES/BENEFITS The QS34XR245 is a member of the M ultiW idth™ family of QuickSwitch devices and provides a set of

DAC1508

Abstract: DAC1408A/DAC1508 DAC1408ADC DAC1508DM DAC-1508 DAC1408A DAC1408APC DAC1408BDC DAC1408BPC DAC1408CDC
Contextual Info: DAC1408/1508 Series 8-Bit Multiplying D/A Converters FAIRCHILD A Schlum berger C om pany _Unear_Division_Data_Ac2 uisition Description Connection Diagram 16-Lead DIP Top View The DAC140 8/1 5 0 8 Series are monolithic 8-bit multiplying digital-to-analog converters constructed using the Fairchild

BROWN BOVERI cs 1000

Abstract: BROWN BOVERI TV 5-1 ASEA RI BROWN BOVERI 10 asea 1980 937 ke equivalent components BROWN BOVERI VE 5-2 ABB app abstract
Contextual Info: Operational Manual Gigahertz Transverse Electromagnetic Cell GTEM Model 5400 Series 6 io i EMC TEST SYSTEMS, L P .-A n ESCO Company E M C O USA FINLAND E-MAIL & INTERNET 2205 Kramer Lane, Austin, Texas 78758-4047 P.O. Box 80589 Austin, Texas 78708-0589 Tel 512.835.4684 Fax 512.835.4729

BU-61843

Contextual Info: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE/µ-ACE MICRO-ACE ] FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)

Hitachi DSAUTAZ005

Contextual Info: HM62W16258B Series 4 M SRAM 256-kword x 16-bit ADE-203-976B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00190
Contextual Info: HM621400HC シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-566 (Z) 暫定仕様 Rev. 0.0 ’00. 11. 30 概要 HM621400HC シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（6 トランジスタメモリセル） プロセス技術を採用し，高密度，高性能，低消費電 力を実現しました。したが