A8A7 Search Results

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

29F032B

Abstract: m29f032b
Contextual Info: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology

am29f040b

Contextual Info: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

AM29F032

Abstract: am29f032b-120 AM29F032B-90
Contextual Info: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

24SA27

Abstract: AM29F017B
Contextual Info: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C

M6M800X1

Abstract: S-29453A
Contextual Info: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Instruction Set . 2

Contextual Info: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements

S-93L76A

Abstract: S-93L76AD0I-I8T1G S-93L76AD0I-J8T1G S-93L76AD0I-T8T1G S-93L76AD0I-K8T3U
Contextual Info: Rev.3.0_00 LOW VOLTAGE OPERATION CMOS SERIAL E2PROM S-93L76A The S-93L76A is a low voltage operating, high speed, low current consumption, 8 K-bit serial E2PROM with a wide operating voltage range. It is organized as 512-word x 16-bit respectively. Each is

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

6514

Abstract: HM65 6514 ram
Contextual Info: HM-6514/883 Semiconductor 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

SA10

Abstract: SA11 SA12 SA13 SA14 SA15
Contextual Info: PRELIMINARY Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation

S-24C04B

Abstract: S-29130ADPA S-29430A S-93C46A
Contextual Info: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Instruction Set . 2

M6M800X1

Abstract: 24C16a 24cxx S-29453A S-93C46A
Contextual Info: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Instruction Set . 2

AM29F016D-120

Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any

AM29F032B-75

Abstract: AM29F032B-90 SA10 SA11 SA12 SA13 SA14 SA15 SA16
Contextual Info: Am29F032B Data Sheet Am29F032B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

Contextual Info: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C

Contextual Info: AMD£I ADVANCE INFORMATION Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 w rite/erase cycles guaranteed ■ Package options

Contextual Info: M65KA128AL 128Mbit 4 Banks x 2M x 16 1.8V Supply, Low Power SDRAMs PRELIMINARY DATA Features summary • 128Mbit SYNCHRONOUS DYNAMIC RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide ■ SUPPLY VOLTAGE – VDD = 1.65V to 1.95V – VDDQ = 1.65 to 1.95V for Input/Output

Contextual Info: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation

HYB25L256160AC

Abstract: HYB25L256160AF HYE25L256160AF
Contextual Info: Data Sheet, Rev. 1.3, Nov 2004 HYB25L256160A[F/C] HYE25L256160AF 256MBit Mobile-RAM Mobile-RAM Commercial Temperature Range Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.