A878 Search Results

TRF600-150

Contextual Info: PRODUCT: TRF600-150 PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Overcurrent Protection Device Raychem Circuit Protection Products DOCUMENT: SCD 25092 PCN: A87878-000, F30347-000 REV LETTER: L

MB89393

Abstract: mb89288 8086 microprocessor pin description MB89254 MB89289 mb89284 8088 microprocessor MB89237A interfacing of memory devices with 8085 MB89259A
Contextual Info: TM417-A878: August 1987 DESCRIPTION The Fujitsu MB89395 is a highly integrated periph­ eral device for MBL8086/8088 or equivalents 16-bit microprocessors. The MB89395 integrates the most common MBL8086/8088 (or equivalents) system compo­ nents - a bus controller (MB89288 equivalent), an

MB89393

Abstract: MB89254 MB89289 MB89288 mb89284 8088 microprocessor mb89284a mb89259a mb893 mb89259
Contextual Info: TM417-A878: August 1987 DESCRIPTION The Fujitsu MB89395 is a highly integrated periph­ eral device for MBL8086/8088 or equivalents 16-bit microprocessors. The MB89395 integrates the most common MBL8086/8088 (or equivalents) system compo­ nents - a bus controller (MB89288 equivalent), an

TRF600-150

Abstract: A87878-000 A878
Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: TRF600-150 DOCUMENT: SCD 25092 PCN: A87878-000, F30347-000 REV LETTER: K REV DATE: MARCH 28, 2006

2SK1725

Contextual Info: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage

Contextual Info: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage

7842

Contextual Info: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

2SJ231

Abstract: EN3816
Contextual Info: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0

2SJ231

Contextual Info: O rd e rin g n u m b e r: EN3816 No.3816 _2 S J 2 3 1 P-Channel MOS Silicon FIST Very High-Speed Switching Applications Features • Small ON resistance. • Very high-speed switching. • Low-voltage drive. • Meets radial taping. Absolute Maximum Ratings at Ta = 25°C

IC DAC-30

Abstract: QFP100 QFP160 QFP44 QFP52 TDA8785 TDA8785H
Contextual Info: Preliminary specification Philips Semiconductors 8-bit high-speed analog-to-digital converter with gain and offset controls A8785 • Gain, slow offset control inputs and DAC output swing of 1.5 V p-p range (2.75 ±0.75 V) FEATURES • 8-bit analog-to-digital converter (ADC)

EN3820

Abstract: 2SK1725 AN 7832 KT
Contextual Info: Ordering number:EN3820 N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1725] 2.5 1.45 1.0

RADIO TUNING DIODE

Abstract: gunn diodes
Contextual Info: an A M P com pany Varactor Controlled Local Oscillator/Mixer Assembly 20.59 - 24.21 GHz A87882BM V3.00 Features • • • • • • • • • Low Conversion Loss Small and Lightweight Low AM/FM Noise Electronic Tuning Allows Automatic Frequency Control AFC

EN3820

Abstract: 2SK1725
Contextual Info: Ordering number:EN3820 N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1725] 2.5 1.45 1.0

2SK1724

Abstract: IT 7831
Contextual Info: Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1724] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SJ231

Contextual Info: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0

2SK1724

Contextual Info: Ordering number: EN3819 _ 2SK1724 No.3819 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings atT a = 25°C Drain to Source Voltage

2SK1725

Abstract: EN3820
Contextual Info: Ordering number: E N 3820 _ 2SK1725 No.3820 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M eets radial taping. A b s o lu te M axim um R a tin g s a t Ta = 25°C

Contextual Info: 2087 LD L o w D rive S eries V Dss = 6 0 V P Channel Power MOSFET F e a tu re s • Sm all ON resistance. • Very high-speed switching. • Low-voltage drive. • M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

Contextual Info: 2SJ231 2087 LD L o w D rive S eries VDs s = 1 0 0 V P Channel Power M OSFET •I/3816 F eatu res - Small ON resistance. - Very high-speed switching. - Low-voltage drive. •Meets radial taping. A bsolute Maximum Ratingsmt Ta = 25°C Drain to Source Voltage

Contextual Info: KEMET Part Number: T356H107M006AS Capacitor, tantalum, 100 uF, +/-20% Tol, 6.3V@85C, Lead Spacing=5.08 mm General Information Manufacturer: KEMET Electrical Specifications Value: Voltage DC @ 85C: Voltage DC @ 125C: Tolerance: Body Type: Temperature Range:

EN3813

Abstract: 2SJ228
Contextual Info: Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ228] 2.5 1.45 1.0

2SJ225

Contextual Info: Ordering number:EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ225] 2.5 1.45 1.0

mosfet 7840

Abstract: EN3821 2SK1726
Contextual Info: Ordering number:EN3821 N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1726] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

bc98

Contextual Info: KEMET Part Number: T495D685M035ZTE300 B45197A6685M409 Capacitor, tantalum, 6.8 uF, 7343, +/-20% Tol, 35V@85C General Information + Bottom View Top View Pola rity Manufacturer: F Ind ic a tor Kem et m a y c onstruc t a term ina l slot on the p ositive sid e a t