A7W 50 Search Results

a7w+18

Contextual Info: 4 3 A. 3 T ion and b dtfnrad an ’afiarttM X m S m I1* i te granted ta n M a w 4 _ !_ 2 R E V IS IO N S SVM DATE DESORPTION ECN A APPROVED 09/ 3 1 /0 7 D -SU B TECHNICAL DATA SHELL : Steel 2 .5 u m 1 0 0 u ” min tin over 1.2 5 um (50 u”) min nickel

A7W 85

Abstract: diodes a7w a7w diode A7W smd A7W 75
Contextual Info: Diodes SMD Type High-Speed Double Diode BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1

Contextual Info: i to Vw m h ^ i o f Am ptam l Ovpowlto i oad l i i _jondfaon M k l i aot fa to liilm l, raproduoto r to p v t fa r manufaoturo o r M h to a im o m r faoa . m rt A ta t no rig ht l i gnnfad Conoratfai o tto * to odor eoncori cr fa im my Ito w t o fa too d

A7W 19

Abstract: A7W 13 A7W 05 a7w 60 A7W 03 a7w 45 a7w 26 a7w 01 a7w 02 a7w 25
Contextual Info: E G & G JUDSON S7E D • 303Dh0S 0G001Ô3 T ■ DF Series DF-XXX1 _ Features • • Built-in Interference Planar Diffused Filter • Low Noise • Hermetically Sealed • 106 Blocking • Oxide Passivated Operating Data and Specifications at 23 °C:

A7W 85

Abstract: BAV99 A7w
Contextual Info: Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

a7w 80

Abstract: W2416-70L a7w 16 W2416 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG
Contextual Info: Al/G 1 5 IttZ W2416 IVinbond 2K X 8 CMOS STATIC RAM DESCRIPTION FEATURES The W2416 is a High Speed, Low Power CMOS • Low Power Consumption : Active : 250mW Typ. Static RAM Organized as 2048X8 Bits Standby : 10/zW(Typ.)- L-Version Operates on a Single 5-Volt Supply. It is

army

Abstract: GNS 3011 T1IS EDI81256CA
Contextual Info: ELECTRONIC DESIGNS INC 30E D m 3230114 00005=11 S • m D i EDI81256CA/LPA/PA H » c t r « ilo O n l g n i In o . i High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per­ formance, low power CMOS Static RAM organized as

Contextual Info: ADE-203-072C Z H M 6 7 W 1 6 6 4 S e r i e s _ J a n .0 3 *1 9 9 4 Target Specification 65536-W ord x 16-Bit High Speed Bi-CMOS Static RAM • DESCRIPTION TheHM67W1664 is asynchronous high speed static RAM organized as 64K word x 1Gbit. These operate 3.3V. It realizes

a7w transistor

Abstract: Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82
Contextual Info: PREPARED BY : SPEC No. LD-10407A DATE SHARP APPRO V ED B Y : D A TE F IL E N O . IS S U E : PAGE TFT LIQUID CRYSTAL DISPLAY GROUP S H A R P C O R P O R A T IO N A u g ,1 9 ,1 9 9 8 : 22 p ag e s A P P L IC A B L E G R O U P T F T L iq u id C ry stal D isplay

Contextual Info: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •