256KX1B Search Results

a7w 3 PIN

Abstract: a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34
Contextual Info: EDI816256VA-RP m 256Kx16SRAM x ^ ELECTRONIC DESIGNS, INC. • RuggBdized Plastic ADVANCED 256Kx1B Static RAM CMOS, Monolithic Features The EDI816256VA is a 3.3 volt ruggedized plastic 256Kx16 bit CMOS Static 256Kx16 SRAM that allows the user to capitalize on the

AEG DD 31 n 1200

Abstract: aeg dd 55 n 1200
Contextual Info: 256KX1BASED Dense-Pac Microsystems, Inc. C M O S SR A M FAM ILY -PREUMINARYDPS25616 DPS20482 DESCRIPTION: The Dense-Pac 256KX1 Based Family modules consists of very high speed 256KX1 based static RAMs which have been configured in the organizations described

LM33256

Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Contextual Info: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns

Contextual Info: ^EDI EDI8F16257C '2S6Kx16 SRAM Module EL£CIR0 MC 0CSI6 N& MC 256KX16 Static RAM High Speed CMOS, Module Features 256Kx16bitCMOS Static The EDI8F16257C is a 256Kx16 CMOS Static RAM Mod­ Random Access Memory Module ule consisting of four 4 256Kx4 CMOS Static RAMs in

P4C1257

Contextual Info: P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS FEATURES Full CMOS Separate Data I/O High Speed Equal Access and Cycle Times – 12/15/20/25 ns (Commercial) – 12/15/20/25 ns (Industrial) – 25/35/45/55/70 ns (Military) Single 5V±10% Power Supply

Contextual Info: P4C1257/P4C1257L ULTRA HIGH SPEED 256K X 1 STATIC CMOS RAMS FEATURES Full CMOS Separate Data I/O High Speed Equal Access and Cycle Times – 12/15/20/25 ns (Commercial) – 12/15/20/25 ns (Industrial) – 25/35/45/55/70 ns (Military) Three-State Output Single 5V±10% Power Supply

HY53C256

Abstract: HY53C256LS
Contextual Info: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.