A7C DIODE Search Results

EOS ESD S 61.1

Contextual Info: Technical Data Sheet Oval POWER LED 37-01/A7C-ARTC-AM Features . High Flux Output. . Designed for High Current Operation. . Low Thermal Resistance Rth junction to lead :120°C/W . Packaged in Tubes for Use with Automatic Insertion Equipment. .The product itself will remain within RoHS compliant version.

HT12E application note

Abstract: a/RF remote control HT12E
Contextual Info: HOLTEK H r 2 12 Series of Encoders Features • Operating voltage: - 2.4V-5V for the HT12A/B/C - 2.4V-12V for the HT12E/EA • Low power and high noise immunity CMOS technology • Low standby current: 0.1|iA Typ. at VDD=5V • HT12A/B/C with a 38kHz carrier for infra­

A7c DIODE

Contextual Info: HOLTEK H r 3 12 Series of Encoders Features • • • • O perating voltage: 2.4V~12V Low power and high noise im m unity CM OS technology Low stan db y current M inim um tran sm issio n word: - Fou r w ords for T E trigger - One word for D ata trigger

Contextual Info: H O LTEK H r 3 15 Series o f Encoders/Decoders Features Operating voltage: 2.4V~12V Low power and high noise immunity CMOS technology Low standby current 3 15 address codes Built-in oscillator needs only 5% resistor Three times transmission Check received address twice

A7c DIODE

Abstract: HT628048SSOP ir encoder decoder ic jr car alarm
Contextual Info: HOLTEK HT6280 Car Alarm Decoder Features • • • • • Operating voltage: 3V~5V Low power consumption and high noise immunity CMOS technology Built-in oscillator needs only 5% resistor 3 12 trinary address codes 6 decoder control data outputs • •

1N9064

Abstract: 3BA2
Contextual Info: SN74ALS29863 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS D291S, JANUARY 198« - REVISED AUGUST 1988 • F u n c tio n a lly E q u iv a le n t t o A m 2 9 8 6 3 • Powar-Up High-lmpadanca State DW OR NT PACKAGE • Package Option! Include Plaitic 'Small Outline' Package« and Standard Plastic DIP*

74ABT245

Abstract: 74F245 FCT2245 2245c
Contextual Info: Q Q u a l it y S e m ic o n d u c t o r , I n c . High-Speed C M O S 8-Bit Tranceivers QS54/74FCT245T QS54/74FCT2245T FEATURES/BENEFITS DESCRIPTION • Pin and function compatible to the 74F245 74FCT245/645 and 74ABT245 • Industrial temperature -4 0 °C to 85°C

Contextual Info: PI74LCX16501 Fast CMOS 18-Bit Registered Transceivers Product Description: Product F eatures: • Functionally compatible with FCT3, LVT, and 74 series 16501 families of products • Tri-State outputs • 5V Tolerant inputs and outputs • 2.0V-3.6V Vcc supply operation

6ba1

Abstract: ba8u
Contextual Info: SN54ALS29863, SN54ALS29864 SN74ALS29863, SN74ALS29864 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS PRODUCT PREVIEW D2915, JANUARY 1986 • Functionally Equivalent to A M 29863 and A M 29864 • Choice of True or Inverting Logic • Power-Up High-lmpedance State

Contextual Info: O ^ iy M D M V 27C040 4M 512K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinout -3 2 -L e a d CERDIP ■ High-Performance — 150 ns Maximum Access Time — VCC = 5V ±10% ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as

P4C174

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM j * - - FEATURES • High Speed Address-To-Match - 8 ns Maximum Access Time ■ Data Retention at 2V for Battery Backup Operation ■ Advanced CMOS Technology

Contextual Info: SN74ALS29863, SN74ALS29864 9-BIT BUS TRANSCEIVERS WITH 3 STATE OUTPUTS D 2 9 1 5 , JA N U A R Y 1 9 8 6 -R E V IS E D M A Y 1986 D W OR N T P AC KA G E Functionally Equivalent to A M 2 9 8 6 3 and A M 29864 GBA1 C 1 U Choice of True or Inverting Logic •

Contextual Info: TEXAS INSTR -CLOGIO D E | flTt.1723 0073^40 0 SN74ALS29853, SN74ALS29854 8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS 86D 7 3 9 4 8 D T -S Z - 3 / 9 9 6 1 7 2 3 TEXAS INSTR C L O G I O D2990, FEBRUARY 1987 Functionally Similar to AMD A M 29853 and A M 29854 SN74ALS' . . . DW OR NT PACKAGE

N27C256-200V10

Contextual Info: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing

Contextual Info: QSFCT245T, 640T, 2245T, 2640T U i^ k i n r y ir k C QS54/74FCT245T High Speed CM O S 8-Bit Tra S C P iV P rs i ra n n se e ivers Ô qs54/74fct64ot qs54/74FCT2245T q s 54/74f c t 264o t FEATURES/BENEFITS • Pin and function compatible to the 74F245/640 74FCT245/640/645 and 74ABT245/640

AM27512

Abstract: AM27S12 AM2764 A15C IN3064 am27256 am27512a
Contextual Info: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

XA 3648

Abstract: t3646
Contextual Info: 3.3V CMOS OCTAL TRANSCEIVER/ REGISTERS 3-STATE Integrated Device Technology, Inc. FEATURES: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-8B3, Method 3015; > 200V using machine model (C = 200pF, R = 0) • 25 mil Center SSOP Packages • Extended commercial range of -4 0 °C to +85°C

Contextual Info: SC4524F 18V 2A Step-Down Switching Regulator POWER MANAGEMENT Features Description Wide Input Voltage Range: 3V to 18V 2A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control Cycle-by-Cycle Current Limiting

Contextual Info: ADVANCE INFORMATION * Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Embedded Program Algorithms

A109d

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik mikroelektronik DDR a211d B109D "halbleiterwerk frankfurt" VEB Kombinat zf filter VEB Kombinat halbleiterwerk
Contextual Info: Halbleiter-Bauelemente Semiconductors 1981 D ie vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der D D R gefertigten H albleiterbauelem ente. Dem Anw ender soll durch diese Übersicht die Auswahl d er jew eils in Frage kommenden

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik