A66 Search Results

A7324

Contextual Info: 3.20 9.50±0.25 W 3.14 15.50±0.25 3.00 1.00 PIN A1 PIN A2 PIN B2 PIN B1 0.10 PIN B66 PIN B65 PIN A66 PIN A65 1.00 TYP. 0.15 0.25 R 0.20 V W 1.88±0.10 4X R0.51 PRODUCT DRAWING 74.70±0.25 71.40 65.00 67.94 MIN AGP 71.28 V W 1.00 TYP. 0.20 65.00 71.28 OFFSET DISTANCE BETWEEN

Contextual Info: A66D Submlnlature «Modular Blind Mite Connector* HermetlcaJly Seeled Metal-lb-Matal Hermetic Seal Solder and Braze-ln Hermatle Seal 47SMBM4I 106+Olf - 9540Hz nnWu M d pttt M/A-COMIno. 140 Fourth Avtnue, W«Jth*m, MA 02264 U8A Ikltphona: 600-3662266 ACCD

diode a4s

Abstract: marking code a4s A4S SOT-23 Q68000-A6622 DIODE BAV JS v A4s diode
Contextual Info: Silicon Switching Diode Array BAV 70 For high-speed switching ● Common cathode ● Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

MPS-A68

Abstract: mpsa66 MPSA68 MPS-A65 mpsa65 MPS-A66
Contextual Info: MPS-A65 MPS-A66 SILICON PNP S IL IC O N D A R L IN G T O N T R A N S IS T O R S PNP S IL IC O N D A R L IN G T O N A M P L IF IE R T R A N S IS T O R S . . . designed fo r pre-am plifier in p u t a pplicatio n s requ irin g high inp ut impedance. H ig h D C C urren t G a in ~

STA6620

Abstract: A6620
Contextual Info: S T A6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max ID R ugged and reliable. 25 @ V G S = 10V

ARRAY MICROSYSTEMS

Abstract: B0906 A66111 D4J13 10D2L N6037 A66110ACG asko 7C602 a66210
Contextual Info: A66110/A66111_ A R R A Y DIGITAL ARRAY SIGNAL PROCESSOR DASP IMicrosystems , PRELIMINARY DATA SHEET - REVISION 3.0, MARCH, 1991 APPLICATIONS: FEATURES: •• Arithmetic throughput of up to 400 million operations per second •• Processes 16-bit real or 32-bit complex integer arrays

ARRAY MICROSYSTEMS

Abstract: 16 point DIF FFT using radix 4 fft t523 QAS30 efka a66212
Contextual Info: ARRAY ^ ar MI CR OSYSTEMS INC S7E D • ^GOl^b DODDOST Data Sheet rM I C Rr O S YaS T E MyS * ' lb? H A R R A a66212 Rev 1.2 - 03/93 Programmable array Controller PaC FEATURES: The Programmable array Controller (PaC) is designed to ope rate with the Digital array Signal Processor (DaSP)

Wja66

Contextual Info: uud A66-1 / A66-1 10 to 1000 MHz TO-8 GASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings

mpsa14

Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
Contextual Info: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)

diode sy 715

Abstract: Q68000-A3574
Contextual Info: BAV70 Silicon Switching Diode Array • • For high-speed switching Common cathode Type 0 BAV 70 Marking Ordering code tor versions in bulk Ordering code for versions on 8 mm-tape Package A4 Q68000-A3574 Q68000-A6622 SOT 23 Maximum ratings per diode Parameter

icso

Abstract: MXT3010 MXT3010EP-A MXT3010EP-A66 MXT3010EP-A80
Contextual Info: M Maker Communications, Inc. Timing Characteristics for MXT3010EP-A, -A80, and -A66 Applications Note Number 21 Revision # 1.0 Maker Communications 73 Mount Wayte Avenue Framingham, Massachusetts 01702 Order Number: 100450-01 July 15, 1998 Copyright 1998 by Maker Communications, Inc. All rights reserved.

transistor Bc 82

Contextual Info: +62A49 >C:A6 +:C6 ?>C24C ", I ">E6BC?AB I A6BB ?4D=6>C +62A49 I (24;286 +62A49 I (2A2=6CA:4 +62A49 I A?BB *676A6>46 +62A49 I A66> *?!+ I 2<4D<2C?AB I ,96A=2< 2C2 I *6<:23:<:CG !?=6  (A?5D4CB  <?4; ,:=:>8 6E:46B  ( &?C63?; +6AE6A <?4;B  <?4; +G>C96B:H6A 3G 9:@B6C .6>5?A  6B;C?@ 9:@B6CB 

Contextual Info: +62A49 >C:A6 +:C6 ?>C24C ", J ">E6BC?AB J A6BB ?4D=6>C +62A49 J (24;286 +62A49 J (2A2=6CA:4 +62A49 J A?BB *676A6>46 +62A49 J A66> *?!+ J 2<4D<2C?AB J ,96A=2< 2C2 J *6<:23:<:CH !?=6  (A?5D4CB  <?4; ,:=:>8 6E:46B  ( &?C63?; +6AE6A <?4;B  <?4; +H>C96B:I6A 3H 9:@B6C .6>5?A  6B;C?@ 9:@B6CB 

CE102

Abstract: CE101 MIL-STD-704A MIL-STD-704E MIL-STD-1399A CS02
Contextual Info: Military Standards MIL-STD-704: Aircraft Electrical Power Characteristics Module MIL-STD-704A MIL-STD-704D MIL-STD-704E MI-J2x-xx MI-J6x-xx N/A MI-22x-xx MI-26x-xx N/A MI-A22-xx MI-A66-xx N/A MI-AIM-xx 24Vin Series 300Vin Series N/A M-FIAM3 N/A M-FIAM5 MI-ComPAC 28V

k6 diode

Contextual Info: *62A49 >C:A6 *:C6 ?>C24C "+ I ">E6BC?AB I 'A6BB ?4D=6>C *62A49 I '24;286 *62A49 I '2A2=6CA:4 *62A49 I A?BB 676A6>46 *62A49 I A66> )?!* I 2<4D<2C?AB I +96A=2< 2C2 I )6<:23:<:CG !?=6  'A?5D4CB   *+,   *+, !$+  D2<:CG I %:<:C2AG

Contextual Info: Cascadable Amplifier 10 to 1000 MHz A66-3/ A66-3 V3 Features Product Image • HIGH GAIN - TWO STAGES: 26.0 dB TYP. • LOW NOISE: <3.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Description The A66-3 RF amplifier is a discrete hybrid design, which uses

A66-1

Abstract: CA66-1 SMA66-1
Contextual Info: A66-1/A66-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN-TWO STAGES: 27.5 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH POWER OUTPUT: 15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 1/01)*

MPSA13

Contextual Info: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .

TRANSISTOR A66

Abstract: CA66 SMA66
Contextual Info: A66 / A66 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL:+15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Description The A66 RF amplifier is a discrete hybrid design, which uses

free pdf transistor a4s

Abstract: marking code a4s SOT-23 marking A4s diode a4s A4S SOT-23 Q68000-A6622 MARKING a4s SOT-23
Contextual Info: Silicon Switching Diode Array BAV 70 For high-speed switching ● Common cathode ● Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

ATIC 164 D2

Abstract: WJ-A66 WJ-CA66
Contextual Info: uuU A66-3 / A66-3 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 26.0 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Outline Drawings Specifications* Characteristics

A666

Contextual Info: o THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION «Y AMP INCORPORATED. ALL INTERNATIONAL , ISST 19 LOC REVISIONS BO 39 8 R19KT9 RESERVED. DZST ZONE y A — — REDRAWN S REV PER ECN S04276 APPO >2/10/10 STAINLESS STEEL PER A5TM A666.

B03-2032E

Abstract: ASEA brown boveri protection relay RXIG 22 RXIG 21 RXIG21 brown boveri overcurrent relay rxig 28 BROWN BOVERI protection relay RK 411 ASEA protection relay
Contextual Info: ABB ASEA B R O W N BO V E RI A66 Relavs Abstract Application - — — - — IT Type RXIG 21 B03-2032Ey I Instantaneous ac over- and undercurrent relays

MIL-STD-461 CS101

Abstract: MIL-STD-704A CS02 CS-116
Contextual Info: Military Standards MIL-STD-704: Aircraft Electrical Power Characteristics Module MIL-STD-704A MIL-STD-704D MIL-STD-704E MI-J2x-xx MI-J6x-xx N/A MI-22x-xx MI-26x-xx N/A MI-A22-xx MI-A66-xx N/A MI-AIM-xx 24 Vin Series 300 Vin Series N/A M-FIAM3 N/A M-FIAM5 MI-ComPAC 28 V