A6 S DIODE Search Results
A6 S DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
A6 S DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si2306DSContextual Info: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2306DS O-236 OT-23) S-56945--Rev. 23-Nov-98 | |
2SD143
Abstract: 2SB1032 2SD1436 T4 sm diode
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OCR Scan |
2SB1032 2SD1436Â 23B1032Â 2SD143 2SD1436 T4 sm diode | |
VUB160-16NOX
Abstract: VUB160-16
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VUB160-16NOX M10/O10 60747and 20111102a VUB160-16NOX VUB160-16 | |
VUB120-16NOXContextual Info: VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages: |
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VUB120-16NOX M10/O10 60747a 60747and 20111102a VUB120-16NOX | |
VUB120-16NOXContextual Info: VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name VUB120-16NOX M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 |
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VUB120-16NOX M10/O10 60747and 20111102a VUB120-16NOX | |
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Contextual Info: □IXYS MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Ì VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t) |
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Contextual Info: VUO 120 VUO 155 n ix Y S Three Phase Rectifier Bridge •dAVM V RRM — 121/157 A 1200-1600 V Preliminary Data V RRM Type V V V RRM 1200 VUO 120-12 NOI 1200 VUO 155-12 NOI Symbol 1600 1600 O M 1/01 Type VUO 120-16 NO I VUO 155-16 NO I A6 0E6 0K 6o- Test Conditions |
OCR Scan |
OM10/010 VU0155 | |
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Contextual Info: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t) |
OCR Scan |
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CD74ACT245Contextual Info: Technical D a ta _ CD 54/74A C 245 C D 54/74A C T245 BO AO A1 Octal-Bus Transceiver, 3-State, Non-Inverting * A? - -B 2 A 3 -i • B3 A4 - -B 4 A5- BS A6- B6 B7 A7 D IR - Type Features: • Buffered inputs m Typical propagation delay: 4 n s @ V c c = 5 V , T * = 25°C, CL = 50 pF |
OCR Scan |
54/74A 92CS-3e468 51FUNCTIONAL CD54/74AC245 CD54/74ACT245 700-M CS-42406 CD54/74AC CD54/74ACT CD74ACT245 | |
TQ6122AM
Abstract: TQ611 TQ6122-M 2291C DAC-IC lm337mt MC33071 TQ6122 TQ6122-D MC1403A
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TQ6122 TQ6122AM TQ611 TQ6122-M 2291C DAC-IC lm337mt MC33071 TQ6122 TQ6122-D MC1403A | |
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Contextual Info: RF2360 Preliminary 3 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description 0.158 0.150 The RF2360 is a general purpose, low-cost, high-linearity |
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RF2360 RF2360 OP-16 1000MHz, 03MHz 3000MHz | |
TCET110G
Abstract: pin diagram of IC 7402 TCET110 TCET1100 TCET1100G1 TCET1101 TCET1101G1 TCET1102 TCET1102G TCET2100
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TCET110. TCET4100 TCET110 TCET2100/ TCET4100 16-lead D-74025 TCET110G pin diagram of IC 7402 TCET1100 TCET1100G1 TCET1101 TCET1101G1 TCET1102 TCET1102G TCET2100 | |
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Contextual Info: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic |
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TCET110. TCET4100 TCET110 TCET2100/ TCET4100 16-lead D-74025 | |
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Contextual Info: RF2320 Preliminary 3 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description 0.158 0.150 The RF2320 is a general purpose, low-cost, high-linearity |
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RF2320 RF2320 OP-16 1000MHz, 03MHz 3000MHz | |
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Contextual Info: K3020P G Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a |
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K3020P D-74025 | |
K3020P Series
Abstract: phototransistor microwaves K3020P K3020PG K3021P K3022P K3023P K3023PG K3036P
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K3020P D-74025 K3020P Series phototransistor microwaves K3020PG K3021P K3022P K3023P K3023PG K3036P | |
diode chn 940
Abstract: chn 940 CT-98
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OCR Scan |
TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98 | |
TCET110GContextual Info: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic |
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TCET110. TCET4100 TCET110 TCET2100/ TCET4100 16-lead D-74025 TCET110G | |
LEJ A6 DIODE
Abstract: RF2317 RF2317PCBA ECU-V1H104KBW 1008CS-332XKBC
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OCR Scan |
RF2317 RF2317 50MHz 1000MHz, MPSS100-3C /1008CS-332XKBC RF2317PCBA LEJ A6 DIODE ECU-V1H104KBW 1008CS-332XKBC | |
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Contextual Info: R F H RF2317 MICRO DEVICES LINEAR CATV AMPLIFIER Typ ical A p plications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product D escription The RF2317 is a general purpose, low cost high linearity |
OCR Scan |
RF2317 RF2317 1000MHz, YJ510V 102JC Y105R 221KBN PSS100-3C S-332X | |
tiristor
Abstract: diodo a7 diodo 105 skkt 19/12d Semikron sk 1 1200/18e semikron SKKT 162/12E
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OCR Scan |
fll3bb71 131/08D 161/08D tiristor diodo a7 diodo 105 skkt 19/12d Semikron sk 1 1200/18e semikron SKKT 162/12E | |
LBAS16WT1GContextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode LBAS16WT1G S-LBAS16WT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified |
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LBAS16WT1G S-LBAS16WT1G AEC-Q101 LBAS16WT1G, SC-70 LBAS16WT1G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) |
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LBAS16WT1G SC-70 | |
A6 s diode
Abstract: BAW62 diode A6 l sc-70 a6 A6 marking LBAS16WT1G
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LBAS16WT1G SC-70 A6 s diode BAW62 diode A6 l sc-70 a6 A6 marking LBAS16WT1G | |