A5C 224 Search Results

MT42C4064

Abstract: 0041478 mt4067 MT42
Contextual Info: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10

Contextual Info: QSFCT245T, 640T, 2245T, 2640T f i High Speed CMOS 8-Bit Transceivers Q S54/74FCT245T q s 5 4 /7 4 fc t6 4 o t QS54/74FCT2245T QS54/74FCT2640T FEATURES/BENEFITS • Pin and function compatible to the 74F245/640 74FCT245/640 and 74FCT245T/640T • CMOS power levels: <7.5 mW static

Contextual Info: Tem ic M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for

helavia

Abstract: helavia 0201 0003 060 helavia A4 GY013 Pliofine A 720 HELAVIA RED CABLE oxigeno D100 BS3858 9923 hb
Contextual Info: HELAVIA standard NEOPRENE sleeves H E L AV I A -30 to +90°C black and coloured for technical properties see D100 Grade 3490 : type white WH 001 - blue BU (002) - green GY (003) - yellow YE (004) - orange OG (005) brown BN (006) - red RD (007) - violet VT (008) - black BK (010) - grey GY (013) - pink PK (015)

Contextual Info: SHARP CORP blE D LH5P8128 FEATURES • 131,072 x 8 bit organization • Access times MAX. : 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns • Power consumption: Operating: 572/440/358 mW (MAX.) Standby: 275 nW (MAX.) in self-refresh mode • ûiaü?'Jô OODTbBl bTS « S R P J

Contextual Info: SN74ALS245A. SN74AS245, SN54ALS245A, SN54AS245 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS D2661, DECEMBER 1982 - REVISED M A Y 1986 • 3-State Outputs Drive Bus Lines Directly • P-N-P Inputs Reduce DC Loading • Package Options Include Plastic "Small Outline"

C540

Abstract: TIC54 54HC540 HY315
Contextual Info: SN54HC540, SN54HCS41 SN74HC540, SN74HC541 OC TAL BUFFERS AN D LINE DRIVERS WITH 3-STATE OUTPUTS D2804, MARCH 1984-RE V ISE D SEPTEMBER 1987 • High-Current 3-State Outputs Drive Bus Lines Directly or Up to 15 LSTTL Loads • Data Flow-Thru Pinout All Inputs on

Contextual Info: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or

Contextual Info: WAFER SCALE INTEGRATION B'ìE T> E3 I^ S 3 tìt.,ìG 0 0 Q 0 S 2 4 3 Ü1AF WS57C45 WAFERSCALE INTEGRATION, INC. HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES Ultra-Fast Access Time DESC SMD Nos. 5962-88735/5962-87529 Pin Compatible with AM27S45 and

3171r

Contextual Info: SNS4HCS40, SN54HC541 SN74HC540, SN74HC541 OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS D 2 8 0 4 , M AR CH 1 9 8 4 -R E V IS E D JUNE 1 9 8 9 High-Current 3-State Outputs Drive Bus Lines Directly or Up to 15 LSTTL Loads S N 5 4 H C 5 4 0 , S N 5 4 H C 5 4 1 . . J P AC KAG E

Contextual Info: ca I/I/HITE / M I C R O E L E C T R O N I C S WMS128K8-XXX 128Kx8 MONOLITHIC SRAM. SMD 5962-96691 pending FEATURES A c c e s s Tim es 17, 20, 25, 35, 45, 55n s M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le Radiation Tolerant D e vice s A va ilab le

hc541

Abstract: G1.L HC540 SN54HC540 SN54HC541 SN74HC540 SN74HC541
Contextual Info: SN54HC540, SN54HCS41 SN74HC540, SN74HC541 OCTAL BUFFERS AND LINE DRIVERS WITH 3 STATE OUTPUTS 028 04 , MARCH 1984-REVISED JUNE 1989 S N 5 4 H C 5 4 0 . S N 5 4 H C 5 4 1 . . . J P AC KA G E S N 7 4 H C 5 4 0 , S N 7 4 H C 5 4 1 . . . D W OR N PAC KAG E High-Current 3-State Outputs Drive Bus

Contextual Info: PRELIMINARY ÌJS i CYPRESS 128Kx 8 Static RAM Features Functional Description • H igh speed The CY7C1009 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE] , an active HIGH chip enable (CE2),

Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read A ccess Tim e - 1 2 0 ns A utom atic Page W rite O peration Internal A ddress and Data Latches for 128-B ytes Internal Control Tim er Fast W rite C ycle Tim e P age W rite C ycle Tim e - 1 0 m s M axim um

HM-6551-9

Abstract: HM6551-9 191te D3302 6551-8
Contextual Info: HARRIS SEMICOND SECTOR IS DË| M302S71 DOlObSñ ñ^f~ ' H a r r i s H M Features • • • • • • • • • • • • - 6 256 X T -4 6 -2 3 -0 8 5 5 4 CMOS RAM Pinout TOP VIEW 5 0 |iW Max. L o w S ta n d b y P o w e r.

HYUNDAI i10

Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
Contextual Info: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access

Contextual Info: SEMICONDUCTOR TM NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is one member of a high density EPROM Family which range in densities up to 4 Mb. The NM27C128 is a high performance 128K UV Erasable Electri­ cally Programmable Read Only Memory. It is manufactured with

1KJK

Contextual Info: tiic k ic o n ALUMINUM ELECTROLYTIC CAPACITORS series Law Impedance Long Life Approved A hi i-Solvent Feature iThnough * Low impedance and high reliability withstanding 5000 hours load life at + 1 05°c 3000/2000 hours for smaller case sizes as specified below .

Contextual Info: IC R 1 MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP (D- 11 ) sci [ FEATURES • • • • • • • • • • • • • 1 *

S1DQ10

Abstract: A5C 224
Contextual Info: MI T S U B I S H I M E M OR Y/ AS IC blE D • bZ HT ÖS S 0017flfc,5 3^0 ■ M I T I ^ M ITS U B IS H I LSIs M 5 M 4 V 18 1 8 0 0 A J , T P , R T - 6 ,- 7,-8 # 8 t s 5'® " FAST PAGE MODE 18874368-BIT ( 1048576-WORD BY 18-BIT ) DYNAMIC RAM PIN CONFIGURATION (T O P V IE W )

intel 28F256

Abstract: 290166 290168 8F25
Contextual Info: in te i A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to + 125*C Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase Quick-Pulse Programming Algorithm — 10 /lis Typical Byte-Program — 0.5 Second Chip-Program

d2516ec

Abstract: KE4CN2H5A kingston memory schematic
Contextual Info: REF: BBONEBLK_SRM BeagleBone Black System Reference Manual BeagleBone Black System Reference Manual Revision C.1 May 22, 2014 Author: Gerald Coley gerald@beagleboard.org Contributing Editor: Robert P J Day Page 1 of 126 Rev C.1 REF: BBONEBLK_SRM BeagleBone Black System

qmb-111p

Abstract: NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER CH-4542 DLP31DN201ML4L 52u27
Contextual Info: 5 4 Version Date Author Remarks 0.1 05.06.2007 WAM Initial version 0.2 28.11.2007 PHA 3 2 1 Correction of PCI-Bus Correction of minor errors D 0.3 05.03.2008 PHA D Fix VCC SB +5V Standby to VCC (+5V) LCD (X15) Pinout compatible with MSM800 12V Supply removed / Supply the 12V external on .

diode sk02

Abstract: 225k 400v capacitor SAW 433 SM-2 kyocera 433 k G military resistors catalog SM93 105KA disc Piezoelectric crystal 1mhz ultrasonic Thin Film leaded Capacitors 150 nf BS9100
Contextual Info: A KYOCERA GROUP COMPANY AVX SMPS Caps/High Voltage Caps Tip & Ring/Cap Arrays/Discoidals Advanced Applications Index Introduction – Application Specific MLCs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SMPS Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3