A53ST Search Results

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

fototransistor

Contextual Info: SIEMENS GaAs-lnfrarot-Sendediode GaAs Infrared Emitter 5 .8 4 1 6 .5 L 1 6 .00 1 .5 2 5.5 9 1.52 1.29 1.14 .2 .5 4 2.03 JLJ r-. o-i I-“ S lr M « T IRL 80 A in k> m ^C£>W IO 1.52 Anode Voo i ro O T c-j c-i 1.70 1.45 Plastic m arking GE006461 -iko co R = 0 .7 6

Contextual Info: SIEMENS BSM 100 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • ^G on.min = 15 Ohm BSM 100 GB 170 DN2 h 1700V 145A UJ Type Package Ordering Code HALF-BRIDGE 2

Contextual Info: Metallized Polyester Film Capacitors MKT Partially Coated (Silver Blue Caps) Small dimensions Insulated face ends Versions with special dimensions can be supplied at short notice B 32 510 . B 32 513 I b Construction • Dielectric: polyethylene terephthalate

C67078-S1001-A2

Abstract: TC-130-W SIEMENS ks
Contextual Info: SIEM EN S BUZ 15 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 15 50 V Io 45 A •^DS on Package 1) Ordering Code 0.03 Q TO-204 AE C67078-S1001-A2 Maximum Ratings Values Parameter Symbol Continuous drain current, Tc = 28 "C