A53SB05 Search Results
A53SB05 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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3da92Contextual Info: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture |
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gds341433-mhz27-gbit/s3da92 | |
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
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t-75-37-07235b0582532n-tspl-cc-68+8 | |
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Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width |
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p-lcc-28-rej06toun025iaigpl05018+1 | |
K4887-K4
Abstract: B25355-K167-K4 ws dvd 290
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klk0875klk1270-cb25355-f6405-k1fi235bq5+3 | |
siemens mov all range
Abstract: intel 80c535 n
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023sbds80c515/80c53580c51580c515-16+8 | |
Siemens STU2
Abstract: BTS721L1 diode marking code 4n replace bts721l1 BTS721L1 equivalent
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23sl05bts721l1p-dso-20-9q67og0+6 | |
gd5fContextual Info: SIEMENS Picture Processor SDA 9290-5 Preliminary Data NMOS 1C Features • Noise and cross color reduction by field - or frame recursive filtering • 3 adjustments: 4-dB-, 7-dB- or 12-dB reduction • Automatic adaption to signal quality during vertical blanking |
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12-dbq67100-h5088p-lcc-68-1belon21+4 | |
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Contextual Info: SIEMENS Memory Time Switch Large MTSL PEB 2047 PEB 2047-16 Preliminary Data 1 CMOS IC Features • Non-blocking tim e/space switch for 2048-, 4096-, 8192- or 16 384-kbit/s PCM systems • Different modes programm able for input and output separately • Configurable for a 4096-kHz, 8192-kHz or 16 384-kHz |
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384-kbit/s4096-khz8192-khz384-khz+4 | |
MIP211
Abstract: LSC series Microcontroller by MOTOROLA 007011 siemens Motorola LSC microcontroller ITP05590 siemens modules GR 60 48 V 120 A dtmfgenerator B2M marking Q67100-H6458 converter siemens modules GR 60 48 V 120 A
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net3316-bit100-mwp-lcc-28-1+11 | |
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Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 81 2.84 2.24 2 .4 , 2.1 OJ ^ ^ 0.6 Li X 0.25 1 O l T ^ 0.51 m o rolfo -T U T 2.1 1.0 1.5 2.54 spacing j f t l — Radiant sensitive area 0.4X0.4 '— Collector (BPX 81) Cathode (LD 261) |
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bpx81a235b05 | |
BF 857 TRANSISTORS
Abstract: BF859 BF857 DD41 transistors bf marking s59
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023sb05t-33rceq62702-f784q62702-f785+10 | |
ZO 607 MA 7A 523
Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
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bfq82q62702-f1189ah35b0500b7sn+8 | |
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Contextual Info: S IE M E N S Device Specifications C515 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias TA . 0 ‘C to + 110 'C Storage temperature (TSJ). - 65 "C to + 150 “C |
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fi23sbosa53sb05 | |
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Contextual Info: SIEMENS 3.3V 4M X 4-Bit EDO-Dynamic RAM 2k & 4k-Refresh HYB 3116405BJ/BT L -50/-60/-70 HYB 3117405BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance ÍRAC RAS access time |
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3116405bj/bt3117405bj/bt3117405bj/bt-503117405bj/bt-60+6 | |
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Contextual Info: SIEMENS Preliminary IC-SPECIFICATION TDA 6060XS, TDA 6060G Multistandard Modulator / PLL gage 1 Contents 2 Functional Description, Application Pin Definition and Function 3 4 Block Diagram Circuit Description 5-10 11 Pinning, Package 12 Absolute Maximum Ratings |
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6060xs6060gv66047-s0894-a100-v3-76d4fl235bds+2 | |
q1257
Abstract: D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035
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munich321536-kbit/s24-channel32-channel+10 | |
siemens sda
Abstract: siemens sda 0810
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fi23sbq500s027fl10-bit66-khz+2 | |
B158-B6599
Abstract: siemens 8032 cpu siemens cpu 317 SIEMENS 80515 siemens cpu 314 80535-N 80515 80535 Microcontroller Family SAB 8051 Pocket Guide az35b
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80c51516-bit256-bit-addressable48rclcl1+13 | |
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Contextual Info: SIEMENS HITFET BTS 133 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^)S(on) 50 mi) • Thermal Shutdown Current limit fo(lim) 21 A • Overload protection |
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a53sb05 | |