A5 TRANSISTOR Search Results

cortex-a5 processor

Abstract: cortex-a5 integration manual ARM DII 0020 ATID cortex-a5 ID072410
Contextual Info: CoreSight ETM -A5 ™ Revision: r0p1 Technical Reference Manual Copyright 2009, 2010 ARM. All rights reserved. ARM DDI 0435B ID072410 CoreSight ETM-A5 Technical Reference Manual Copyright © 2009, 2010 ARM. All rights reserved. Release Information

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G

cortex-a5 integration manual

Abstract: cortex-a5 ATID Coresight cortex-a5 processor "coresight design kit" tsva cortex-a5tm
Contextual Info: CoreSight ETM -A5 ™ Revision: r0p2 Technical Reference Manual Copyright 2009, 2010 ARM. All rights reserved. ARM DDI 0435C ID101810 CoreSight ETM-A5 Technical Reference Manual Copyright © 2009, 2010 ARM. All rights reserved. Release Information

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information VF6xx, VF5xx, VF3xx Features • Operating characteristics – Voltage range 3 V to 3.6 V – Temperature range ambient -40 °C to 85 °C • ARM Cortex A5 Core features – Up to 500 MHz ARM Cortex A5

cortex-a5 processor

Abstract: embedded trace macrocell cortex-a5 integration manual ATID AMBA AXI to APB BUS Bridge
Contextual Info: CoreSight ETM -A5 ™ Revision: r0p0 Technical Reference Manual Copyright 2009 ARM. All rights reserved. ARM DDI 0435A ID012010 CoreSight ETM-A5 Technical Reference Manual Copyright © 2009 ARM. All rights reserved. Release Information The following changes have been made to this book.

WJA5

Abstract: WJ-a5
Contextual Info: WJ-A5-6 / SMA5-6 1 5 to 600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT FLAT BANDWIDTH: ±.2 dB TYP. LOW VSWR: 1.3:1 (TYP.) WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Outline Drawings A5-6 Specifications51 Characteristics Typical

Contextual Info: A5-6 / SMA5-6 Cascadable Amplifier 5 to 600 MHz Rev. V3 Features Product Image • FLAT BANDWIDTH: ±.2 dB TYP. • LOW VSWR: 1.3:1 (TYP.) • WIDE POWER SUPPLY RANGE: +8 to +15 VOLTS Description The A5-6 RF amplifier is a discrete hybrid design, which uses

a56 transistor

Contextual Info: A5-6 / SMA5-6 Cascadable Amplifier 5 to 600 MHz Rev. V3 Features Product Image • FLAT BANDWIDTH: ±.2 dB TYP. • LOW VSWR: 1.3:1 (TYP.) • WIDE POWER SUPPLY RANGE: +8 to +15 VOLTS Description The A5-6 RF amplifier is a discrete hybrid design, which uses

WJA5

Abstract: WJ-A5
Contextual Info: WJ-A5/SMA5 5 to 500 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ FLAT BANDWIDTH: +.2 dB TYP. ♦ LOW VSWR: < 1.2:1 INPUT, <1.5:1 OUTPUT (TYP.) ♦ WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Outline Drawings A5 0.450 n (11.41) t Specifications’*

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data VF6xx, VF5xx, VF3xx Features • Operating characteristics – Voltage range 3 V to 3.6 V – Temperature range ambient -40 °C to 85 °C • ARM Cortex A5 Core features – Up to 500 MHz ARM Cortex A5 – 32 KB/32 KB I/D L1 Cache

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data VF3xxR, VF5xxR Features • Operating characteristics – Voltage range 3 V to 3.6 V – Temperature range ambient -40 °C to 85 °C • ARM Cortex A5 Core features – Up to 400 MHz ARM Cortex A5 – 32 KB/32 KB I/D L1 Cache

Contextual Info: A5 / SMA5 Cascadable Amplifier 5 to 500 MHz Rev. V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT FLAT BANDWIDTH ±.2 dB TYP. LOW VSWR <1.2:1 INPUT, <1.5:1 OUTPUT (TYP.) WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Description The A5 RF amplifier is a discrete hybrid design, which uses

Contextual Info: Cascadable Amplifier 5 to 500 MHz A5 / SMA5 V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT FLAT BANDWIDTH ±.2 dB TYP. LOW VSWR <1.2:1 INPUT, <1.5:1 OUTPUT (TYP.) WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Description The A5 RF amplifier is a discrete hybrid design, which uses

Contextual Info: Cascadable Amplifier 5 to 600 MHz A5-6 / SMA5-6 V3 Features Product Image • FLAT BANDWIDTH: ±.2 dB TYP. • LOW VSWR: 1.3:1 (TYP.) • WIDE POWER SUPPLY RANGE: +8 to +15 VOLTS Description The A5-6 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMA5N dual digital transistors PNP+PNP SOT-353 FEATURES z Two DTA123J chips in a package Marking: A5 1 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol

transistor marking A5

Contextual Info: UMA5N FMA5A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units: mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMA5N (UMT5) package marking: UMA5N and FMA5A; A5 package contains two interconnected PNP digital transistors (DTA123JKA)

2SA1774

Abstract: 2SC4617
Contextual Info: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage

2SC309

Abstract: 2SC3098 uPI Semiconductor
Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)

SH-31R

Abstract: SH-33R transistor 372 SSA5 SH-32R SH-21 SH-72
Contextual Info: PHOTOELECTRIC SENSORS SS-A5 MS-AJ Sensor Mounting Stand Amplifier-separated Manual Sensitivity Setting Photoelectric Sensor VF NX5 Multi-voltage Type PM2 Micro PM Twin Adjuster Enables Delicate Sensitivity Setting Twin Adjuster Automatic Interference Prevention

BC807-16

Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
Contextual Info: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage

DTA143

Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
Contextual Info: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO

Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vds 1000 V Id 2.3 A ^DS on Package Ordering Code 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Values

BUZ11S2

Abstract: buz11 siemens
Contextual Info: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current

FESS 006

Abstract: 351-07 A1307 C67078-A1307-A5 M20D buz 353 siemens 350 98 O
Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vbs 1000 V b wDS on Package Ordering Code 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vtis Drain-gate voltage ^DGR Values