A5 GNC Search Results

Contextual Info: HBLTEK f V H T1622 RAM Mapping 32x8 LCD Controller for I/O ^iC Features • • • • • • • • • • Operating voltage: 2.7V-5.2V Built-in RC oscillator 1/4 bias, 1/8 duty, frame frequency is 64Hz Max. 32x8 patterns, 8 commons, 32 segments Built-in internal resistor type bias generator

A5 GNC

Abstract: CY62128BLL-70ZRC CY62128B CY62128BLL-55SC CY62128BLL-55SI 0/mosfet A5 GNC
Contextual Info: CY62128B MoBL 128K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. 1CY62128B MoBL™ Features • 4.5V–5.5V operation • CMOS for optimum speed/power

A5 GNC

Contextual Info: 28B MoBL CY62128B MoBL® 128K x 8 Static RAM Features power-down feature that reduces power consumption by more than 75% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)

CY62128BN

Abstract: CY62128BNLL-55SXI CY62128BNLL-55ZXI CY62128BNLL-70SXA
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active

CY62128BNLL-70SXI

Abstract: CY62128BNLL-70ZXC CY62128BN CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active

CY62128BN

Abstract: CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Contextual Info: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active

Contextual Info: Advance Information lllln llll I W T DATA SHEET _ M September 1989 HM 65770 4 KX 4 HIGH SPEED CMOS SRAM WITH OUTPUT ENABLE FEATURES . FAST ACCESS TIME MILITARY : 25/35/45 ns max COMMERCIAL : 20/25/35/45 ns (max) . LOW POWER CONSUMPTION ACTIVE : 385 mW (max)

asus schematic diagram

Abstract: asus f3 asus 74MC14 Asus P5 FJ 3528 asus block diagram asus diagram asus a6 EL B17 A017
Contextual Info: SLK BLOCK DIAGRAM V 2.00 < INTEL COPPERMINE GCL I N V ,LCD SBT OZ998 1,2,3 37 38 HOST BUS MEM BUS INTEL ON BOARD 64MB SDRAM CLOCKS 9248-10 1 c* CO I/O BOARD IC S SODIMM ONE SLOT 11 PCI BUS 10 USB P O R T *2 RJ-11 CARDBUS CONTREOLLER « I 1451 W 1 8 ,1 9 R J -4 5

a5 gnc

Contextual Info: MITSUBISHI LSIs M5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL.-10XL 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This M 5M 5256C P , FP, KP, VP, RV is a 26;?14 4 - bit CMOS static RAM s organized as 3 2 7 6 8 -w o rd s by 8 -b its w hich s fabricated using h igh -pe rform an ce 3 polysilicon CMOS

Contextual Info: Raytheon Electronics Semiconductor Division R296XX/R297XX S tandard PROMs and P ow er-S w itched SPROMs Features Description • Devices are available in military -55°C to +125°C temperature range • Standard PROMs are offered in power-switched SPROM

Contextual Info: TOSHIBA TC55257CPI/CFVCSPI/CFIVCTEI-85/10 SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description TheTC55257CPI is a 262,14^ bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

M5M5256-12L

Abstract: M5M5256
Contextual Info: MITSUBISHI LS Is M5M5256BVP,RV-70L,-85L,-10L,-12L,-15L, -70LL,-85LL,-10LL,-12LL,-15LL 262144-BIT 32768-WORD BY8-BIT CMOS STATIC RAM DESCRIPTION Tho M5M5256BVP, RV are 262144-bit CMOS static RAMs organized as 32768-words by 8-bit. They are fabricated using

is62c256-70u

Abstract: IS62C256
Contextual Info: IS62C256 32K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 45, 70 ns • Low active power: 200 mW typical • Low standby power — 250 fiW (typical) CMOS standby — 28 mW (typical) TTL standby • Fully static operation: no clock or refresh required

Contextual Info: IlM l DATA SHEET_ HM 65262 16 Kx 1 VERY LOW POWER CMOS SRAM FEATURES . 300 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . SINGLE 5 VOLT SUPPLY . EQUAL CYCLE AND ACCESS TIME . GATED INPUTS : NO PULL-UP/DOWN

Contextual Info: MTE D • Sf i bf l M5b GQG1GS1 bib ■flHHS _ n ^ ^ o - Z 3 - D S ~ Preliminary IM III I f ï l l l September 1990 MATRA M H S HM 65687 DATA SHEET 64 k x 1 ULTIMATE CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS

CY621282

Abstract: A5 GNC
Contextual Info: CY621282BN MoBL Automotive 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Automotive-E: –40 °C to 125 °C ■ 4.5 V to 5.5 V operation ■ Complementary metal oxide semiconductor (CMOS) for

LM2596-ADJ

Abstract: NEC c157 marking code R74 SMD Transistor VR4133 K4S511632D ad1826 short stop 12v p18 30a altera midas transistor BD 222 SMD MARKING 11C5
Contextual Info: Preliminary User’s Manual startWARE-GHS-VR4133 Starter Kit VR4133 Document No. U16916EE2V0UM00 Date Published March 2004  NEC Corporation 2004 Printed in Germany The information in this document is subject to change without notice. No part of this document may

A5 GNC

Abstract: TSOP32-P-4QO-K 51V17400 5116100
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

HG62G

Abstract: HG62G027 HG62G019 KZL 99 0/ICE2qs01 equivalent
Contextual Info: * T 1 tí U92 A D E-206-009A HG62G Series High-Speed CMOS Gate Array HITACHI Description The HG62G series free-channel gate arrays are fabricated with 0.8 |am CMOS process and double metal interconnect technology. The HG62G series consists of 4 master slices ranging from 14,540 to

Contextual Info: November 1993 Editbn 2.0 FUJITSU DATA SHEET MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access memory fabricated with CMOS technology.

HG62G019

Abstract: HG62G HG62G027
Contextual Info: HG62G Series High-Speed CMOS Gate Array ^H IT A C H I ” Description The H G 62G series free-channel gate arrays are fabricated with 0.8 pm CMOS process and double metal interconnect technology. The HG62G series consists o f 4 m aster slices ranging from 14,540 to

Contextual Info: M M a rc h l 1994 HM 65262 DATA SHEET 16 K x 1 VERY LOW POWER CMOS SRAM FEATURES . . . ACCESS TIME COMMERCIAL : 70 ns max MILITARY/INDUSTRIAL : 70/85 ns (max) VERY LOW POWER CONSUMPTION ACTIVE: 110 mW(typ) STANDBY : 2.0 pW (typ) DATA RETENTION : 0.8 pW (typ)

dqg47

Contextual Info: !5 /,0,1$5< &= & 65 $,1 06 9GG 9VV /(' 1 '5 '< ; 02 6 ,              & = 0 ,6 2   <6 6 &/.   <6 1 56 7   <6 9 GG   $ UHI 9 VV   $ * QG ;72   $9GG ;7,   < ;   < ;   <             

Contextual Info: « M il i v m September 1989 HM 65641 DATASHEET 8kX8 VERY LOW POWER CMOS SRAM FEATURES . FAST ACCES TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 125 mW (typ) STANDBY : 2.0 nW (typ) DATA RETENTION : 0.8 nW (typ)