A3A1 Search Results

Contextual Info: Data Sheet 0630C CRYSTAL CLOCK OSCILLATORS Rev. F SINE-WAVE UHF VCXO AB-A3A1XX Series Description The AB-A3A1XX Series of voltage controlled crystal oscillators VCXO provides ultra high frequency with a single-ended sine-wave output. The device is based on low noise analog harmonic frequency multiplication,

Contextual Info: Data Sheet 0630C CRYSTAL CLOCK OSCILLATORS Rev. G SINE-WAVE UHF VCXO AB-A3A1XX Series Description The AB-A3A1XX Series of voltage controlled crystal oscillators VCXO provides ultra high frequency with a single-ended sine-wave output. The device is based on low noise analog harmonic frequency multiplication,

Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0630C Rev. - SINE-WAVE UHF VCXO SU-A3A1XX Series Description The SU-A3A1XX Series of voltage controlled crystal oscillators VCXO provides ultra high frequency with single-ended sine-wave outputs. The device is based on low noise analog harmonic frequency

Contextual Info: Data Sheet 0630C CRYSTAL CLOCK OSCILLATORS Rev. E SINE-WAVE UHF VCXO AB-A3A1XX Series Description The AB-A3A1XX Series of voltage controlled crystal oscillators VCXO provides ultra high frequency with a single-ended sine-wave output. The device is based on low noise analog harmonic frequency multiplication,

LH77790

Abstract: MCF5206 MCF5307 MPC850 SH7709
Contextual Info: Understanding Page Mode Flash Memory Devices Application Note Current AMD flash memory products operate with random access times ranging anywhere from 45 ns to 150 ns. Though most applications use an AMD flash device with a random access time of about 70 ns to 90 ns. The

SBP9989

Abstract: U555 AFG MARKING CODE architecture diagram for 8080 im 1117 marking S98 MIL-M-38510 part marking MICROCIRCUIT PJ 1179 0c55696
Contextual Info: I QUALIFICATION I REQUIREMENTS I REMOVED MIL-M-38510/465A 8 August 1986 I I I Su p e r s e d i n g MIL-M-38510/465 USAF 20 October 198? MILITARY SPECIFICATION MICROCIRCUITS DIGITAL, INTEGRATED INJECTION LOGIC (I 2 L), PARALLEL 16-BIT MICROPROCESSOR, MONOLITHIC SILICON

Contextual Info: TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103 TPS659104, TPS659105, TPS659106, TPS659107, TPS659108, TPS659109 www.ti.com SWCS046S – MARCH 2010 – REVISED AUGUST 2013 Integrated Power Management Unit Top Specification Check for Samples: TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103, TPS659104, TPS659105, TPS659106,

AM29PL160CB

Contextual Info: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read

IDT70824

Abstract: IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) • Low-power operation

NT5CB64M16AP-CF

Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Contextual Info: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )

General Electric C 524 k

Abstract: MR53V8052J-XXRA DIP42-P-600-2 MR53V8052J MR53V8052J-XXMA MR53V8052J-XXTP
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM27C452CZ

Abstract: DIP40
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: i. |-v.? I ? ÿ-'H í í iC- i.- i, í ? í -i ;: XR16C872 r 'VV í Dual UART with 1284 Parallel Port and Plug-and-Play Controller X *E X d R June 1999-1 FEATURES • IrDA Infrared Pulse Shaping Encoder/Decoder for up to 115.2Kbps Data Rate • Plug and Play ISA Bus Specification Compliant

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

Contextual Info: BROOKTREE CORP b3E B • 1^455^5 DDQ7G3T Interface Specification IS-210.15 SMDS C o n tro l and R e a sse m b ly F o r m a tte r Part # UGA-210 M arch, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 6 1 9 -4 5 2 -7 5 8 0

29L1611-75

Abstract: 29l1611-10
Contextual Info: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.

D1 PGA 478

Abstract: Intel 82430 saram idt
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

sab 3021

Abstract: IDT70825 AN-120 AN120
Contextual Info: FUNCTIONAL DESCRIPTION OF THE IDT70825 SARAM 8K X 16 DUAL-PORT RAM APPLICATION NOTE AN-120 Integrated Device Technology, Inc. By Jeffrey C. Smith GENERAL DESCRIPTION This technical description is intended to fully describe the component operation of the IDT70825 SARAM™ Sequential

Contextual Info: PSD4000 Series PSD4235G2 Flash In-System-Programmable Peripherals for 16-Bit MCUs August, 2000 Preliminary Information 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: http://www.waferscale.com

Contextual Info: PRELIMINARY‡ 256MB, 512MB x72 184 Pin REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT18VDDT3272G, MT18VDDT6472G For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • • • • • • • • • • •

AD0-AD15

Abstract: AD10 AD11 AD12 AD14 PSD4235G2 TQFP80 psd4xx
Contextual Info: PSD4235G2 Flash In-System Programmable ISP Peripherals For 16-bit MCUs (5V Supply) PRELIMINARY DATA FEATURES SUMMARY PSD provides an integrated solution to 16-bit MCU based applications that includes configurable memories, PLD logic and I/O: • Dual Bank Flash Memories

AD11

Abstract: AD12 AD14 PSD4235G2V TQFP80 AD0-AD15 AD10 psd4xx ROM. In-system programming c167
Contextual Info: PSD4235G2V Flash In-System Programmable ISP Peripherals For 16-bit MCUs (3.3V Supply) PRELIMINARY DATA FEATURES SUMMARY PSD provides an integrated solution to 16-bit MCU based applications that includes configurable memories, PLD logic and I/O: • Dual Bank Flash Memories

Contextual Info: HM62W8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-656A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi HM62W8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 jim Hi-CMOS shrink process

Contextual Info: @ LG Semicon. Co. LTD Description Fin Configuration The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050 offers automatic power down controlled by the mask