A30 TRANSISTOR Search Results
A30 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
A30 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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alu 74181
Abstract: 25B22 f422 S2 f19
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OCR Scan |
CFT1812A CFT1812A 32-bit 74181-type) CFT1810A alu 74181 25B22 f422 S2 f19 | |
Thyristor bst 2
Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
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CA3081, CA3082 1-888-I CA3082 CA3081) CA3082) 100mA Thyristor bst 2 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96 | |
MG50G1BL3
Abstract: MG50G1BL3 toshiba MG50G6EL1 MG50G2CL3 MG50G2cl3 toshiba MG50G1JL1 MG50G2DL1 DT-33-35 toshiba MG50G6EL1 toshiba diode 3D
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OCR Scan |
DT-33-35* MG50G1BL3 MG50G2CL3 MG50G2DL1 MG50G6EL1 MG50G2DL1 DDlti231 T-33-35" MG50G1JL1 MG50G1BL3 toshiba MG50G6EL1 MG50G2cl3 toshiba DT-33-35 toshiba MG50G6EL1 toshiba diode 3D | |
K9F8G08U0M
Abstract: K9F8G08U0M-PCB0 K9F8G08U K9XXG08XXM K9F8G08UXM SAMSUNG 4gb NAND Flash Qualification Report A3005H
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K9KAG08U1M K9F8G08U0M K9F8G08B0M K9F8G08UXM 100ns) K9F8G08U0M-PCB0 K9F8G08U K9XXG08XXM K9F8G08UXM SAMSUNG 4gb NAND Flash Qualification Report A3005H | |
K9F8G08U0M
Abstract: K9F8G08 K9F8G08U0M-PCB0 K9F8G08U K9F8G08UXM K9KAG08U1M K9F8G08U0 K9F8G k9f8g08x0m K9F8G08U0M-P
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K9KAG08U1M K9F8G08U0M K9F8G08B0M K9F8G08UXM 4224Byte 100ns) K9F8G08 K9F8G08U0M-PCB0 K9F8G08U K9F8G08UXM K9KAG08U1M K9F8G08U0 K9F8G k9f8g08x0m K9F8G08U0M-P | |
K9F4G08U0B
Abstract: K9K8G08U0B K9WAG08U1B K9K8G08U0B-PCB0 Samsung k9f4G08u0B K9WAG08U1B-PCB0 K9K8G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1B-P samsung K9K8G08U0B-PCB0
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K9K8G08U0B K9WAG08U1B K9F4G08U0B K9WAG08U1B K9K8G08U0B-PCB0 Samsung k9f4G08u0B K9WAG08U1B-PCB0 K9K8G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1B-P samsung K9K8G08U0B-PCB0 | |
K9WBG08U1M
Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
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K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P | |
K9K8G08U0A-PCB0
Abstract: K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A
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K9WAG08U1A K9K8G08U0A K9XXG08UXA K9K8G08U0A-PCB0 K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A | |
K9WAG08U1M-PCB0
Abstract: K9K8G08U0M-PCB0 samsung 2GB Nand flash SAMSUNG 8gb NAND Flash memory K9XXG08UXM-XIB0 K9K8G08U samsung 1Gb nand flash samsung 8Gb nand flash serial flash memory 8gb K9K8G08U0M
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K9WAG08U1M K9K8G08U0M K9XXG08UXM K9WAG08U1M-PCB0 K9K8G08U0M-PCB0 samsung 2GB Nand flash SAMSUNG 8gb NAND Flash memory K9XXG08UXM-XIB0 K9K8G08U samsung 1Gb nand flash samsung 8Gb nand flash serial flash memory 8gb K9K8G08U0M | |
K9K8G08U0A-PCB0
Abstract: K9WAG08U1A-PCB0
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K9WAG08U1A K9K8G08U0A K9XXG08UXA AG08U1A K9K8G08U0A-PCB0 K9WAG08U1A-PCB0 | |
K9K8G08U0M
Abstract: K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip
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K9WAG08U1M K9K8G08U0M K9NBG08U5M K9XXG08UXM K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip | |
TRANSISTOR A30
Abstract: A30 TRANSISTOR Intel 8237A
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OCR Scan |
GFI2370A GFI2370A LL7000 LSA2000 TRANSISTOR A30 A30 TRANSISTOR Intel 8237A | |
Samsung Flash K9WAG08U1A
Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
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K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A | |
a2724
Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
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OCR Scan |
CFB0230A CFB023 32-bit CFB0230A flE-f32) a2724 Transistor A23 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder | |
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Contextual Info: f Z T SGS-THOMSON *•7#s SD1463 TCC0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ . ■ ■ . 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION p 0UT = 125 W MIN. WITH 7.0 dB GAIN .400 .425 8LFL (M 168) X epoxy sealed O R D ER CODE |
OCR Scan |
SD1463 TCC0204-125) SD1463 | |
dB-50Contextual Info: CFI2371A CFI2371A CFI2371A DMA Controller DESCRIPTION : CFI2371A is designed to be fully compatible with the GFI2370A, except that channels 2 and 3 are not functionally supported. The CFI2371A is compatible to the CFX2370A in I/Os, in programming, and in channels 0 and 1 i.e., supporting also |
OCR Scan |
CFI2371A CFI2371A GFI2370A, CFX2370A dB-50 | |
Contextual Info: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST |
OCR Scan |
SD1456 | |
Contextual Info: GFI2371A GFI2371A GFI2371A DMA CONTROLLER GENERAL DESCRIPTION: THE GFI2371A MEGAFUNCTION IS DESIGNED TO BE FOLLY COMPATIBLE WITH THE GFI2370A, OR THE INTEL 8237A, EXCEPT THAT CHANNELS 2 AND 3 ARB NOT FUNCTIONALLY SUPPORTED. THIS ALLOWS FOR A LOWER GATE COUNT, WHICH GREATLY IMPROVES THE PERFORMANCE OVER |
OCR Scan |
GFI2371A GFI2371A GFI2370A, | |
Contextual Info: BSE D POUIEREX INC f o m e i o • 72T4bEl 00QMM7A h HP R X KET24510HB High-Beta Six-Darlington Transistor Module • T - 3 3 -3 5 r Pow erex, In c., Hlllls Street, Youngwood, Pennsylvania 15697 4I2J 925-7272 Powerex Europe, S.A ., 428 Avenue G, Durand, BP107, 72003 L e Mans, France (43 41.14.14 |
OCR Scan |
72T4bEl 00QMM7A KET24510HB BP107, Amperes/600 7STMb21 T-33-35 | |
NEC B536
Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
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OCR Scan |
2SB536 2SB537/2SD381 2SD382 2SB536, 2SB537 2SD381, 2SD382 537/2S 2SB536/2SD381 NEC B536 2SB536 NEC 2sD381 b536 B-536 nec b 537 b537 | |
Contextual Info: CFI2370A CFI2370A CFI2370A DMA Controller DESCRIPTION: CFI2370A is compatible in functionality with the Intel 8237A 4-channel programmable DMA controller. Performance is improved mu c h over that of the standard part. I/Os can be made compatible to the standard part, as shown in the diagram on page 5 of |
OCR Scan |
CFI2370A CFI2370A | |
CY7B199-12
Abstract: LVT16245 SN74ACT3632-15 TMS27C040 TMS55160-70 SDRAM 1994 Texas Instruments U58 248 vram 32k 1995 AND sdram AND SN74LVT16244
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TMS320C8x BPRA069 TMS320C80 TMS320C80 TMS34020 CY7B199-12 LVT16245 SN74ACT3632-15 TMS27C040 TMS55160-70 SDRAM 1994 Texas Instruments U58 248 vram 32k 1995 AND sdram AND SN74LVT16244 | |
20NA50Contextual Info: ¿57 TYP E SGS-THOMSON N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STW 20NA50 S T W 2 0 N A 50 ¡U È T O « dss 500 V R D S o n Id < 0.27 a 20 A . TYPICAL R Ds(on) = 0.22 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED |
OCR Scan |
20NA50 STW20NA50 O-247 20NA50 | |
B34 transistor
Abstract: 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R32C
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CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER B34 transistor 50MHZ CX20202A-1 CXD1178Q CXD2303Q R32C |