A3 DIODE SMD Search Results
A3 DIODE SMD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
| BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
| BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
A3 DIODE SMD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ic 8739Contextual Info: Temic S e m i c o n d u c t o r s TSML3700 GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3700 is an infrared emitting diode in GaAlAs on GaAs technology in a miniature P L -C C -2 SMD package. It has been designed to meet the increasing demand on |
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TSML3700 TSML3700 OT-23 D-74025 16-Oct-96 ic 8739 | |
TEMT3700
Abstract: TSML3700 diode 7952
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TSML3700 TSML3700 D-74025 16-Oct-96 TEMT3700 diode 7952 | |
MOC3052 SMD
Abstract: MOC3052 phase control of triac
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MOC3051, MOC3052 MOC3051X, MOC3052X E91231 MOC305_ DB92705m-AAS/A3 MOC3052 SMD phase control of triac | |
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Contextual Info: 4N32X3,-2,-1 4N32-3,-2,-1 LOW INPUT CURRENT PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l EN60950 approved by SETI, |
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4N32X3 4N32-3 E91231 EN60950 DB91023-AAS/A3 | |
4N32-1
Abstract: 4N32-2 4N32-3 4N32X3 E91231 db9102
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4N32X3 4N32-3 E91231 EN60950 DB91023-AAS/A3 4N32-1 4N32-2 E91231 db9102 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16HT1G FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. ƽ 1 We declare that the material of product compliance with RoHS requirements. |
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LBAS16HT1G 3000/Tape LBAS16HT3G 10000/Tape | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16HT1G FEATURE ƽSmall plastic SMD package. S-LBAS16HT1G ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. ƽWe declare that the material of product compliance with RoHS requirements. |
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LBAS16HT1G S-LBAS16HT1G AEC-Q101 3000/Tape LBAS16HT3G S-LBAS16HT3G 10000/Tape | |
smd diode marking A3
Abstract: DIODE smd marking A3 smd transistor marking A3 smd diode a3 BAP64-03 S4 DIODE diode Marking s4 smd diode S4 a3 diode smd DIODE S4 65
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BAP64-03 OD-323 smd diode marking A3 DIODE smd marking A3 smd transistor marking A3 smd diode a3 BAP64-03 S4 DIODE diode Marking s4 smd diode S4 a3 diode smd DIODE S4 65 | |
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Contextual Info: Product specification Philips Sem iconductors General purpose double diode BAV23S FEATURES DESCRIPTION • Small plastic SMD package The BAV23S consists of two general purpose diodes connected in series fabricated in planar technology, and encapsulated in the small plastic |
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BAV23S BAV23S M4M232 | |
E91231
Abstract: ISP624-1 ISP624-1X ISP624-2 ISP624-2X ISP624-4 ISP624-4X
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ISP624-1X, ISP624-2X, ISP624-4X ISP624-1, ISP624-2, ISP624-4 E91231 EN60950 P96102022 ISP624-1X E91231 ISP624-1 ISP624-1X ISP624-2 ISP624-2X ISP624-4 ISP624-4X | |
ISP321
Abstract: E91231 ISP321-1 ISP321-1X ISP321-2 ISP321-2X ISP321-4 ISP321-4X
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ISP321-1X, ISP321-2X, ISP321-4X ISP321-1, ISP321-2, ISP321-4 E91231 EN60950 P01102465 FI18162 ISP321 E91231 ISP321-1 ISP321-1X ISP321-2 ISP321-2X ISP321-4 ISP321-4X | |
E91231
Abstract: ISP624-1 ISP624-1X ISP624-2 ISP624-2X ISP624-4 ISP624-4X
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ISP624-1X, ISP624-2X, ISP624-4X ISP624-1, ISP624-2, ISP624-4 E91231 EN60950 P96102022 ISP624-1X E91231 ISP624-1 ISP624-1X ISP624-2 ISP624-2X ISP624-4 ISP624-4X | |
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Contextual Info: ISP521-1X, ISP521-2X, ISP521-4X ISP521-1, ISP521-2, ISP521-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 |
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ISP521-1X, ISP521-2X, ISP521-4X ISP521-1, ISP521-2, ISP521-4 E91231 EN60950 P01102465 FI18162 | |
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Contextual Info: ISP521-1X, ISP521-2X, ISP521-4X ISP521-1, ISP521-2, ISP521-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 |
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ISP521-1X, ISP521-2X, ISP521-4X ISP521-1, ISP521-2, ISP521-4 E91231 EN60950 P01102465 FI18162 | |
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ISP621-2X
Abstract: E91231 ISP621-1 ISP621-1X ISP621-2 ISP621-4 ISP621-4X ISP6211
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ISP621-1X, ISP621-2X, ISP621-4X ISP621-1, ISP621-2, ISP621-4 E91231 EN60950 P96102022 ISP621-1X ISP621-2X E91231 ISP621-1 ISP621-1X ISP621-2 ISP621-4 ISP621-4X ISP6211 | |
COBRA5272
Abstract: sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2
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100nF SMD0805 F/10V LM2596-3 3/TO263 SCHOTTKY31 SMD1812 COBRA5272 sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2 | |
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Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS V = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1 |
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KO3403 OT-23 | |
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Contextual Info: MOTOROLA M ilita ry 54F 3 2 Quad 2-In p u t OR G ate MPO ELECTRICALLY TESTED PER: MIL-M-38510/33501 HUM LOGIC DIAGRAM VqC A4 B4 Y4 B3 A3 Y3 AVAILABLE AS: 1 JAN: JM38510/33501BXA 2) SMD: N/A 3) 883: 54F32/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CEROIP: C |
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MIL-M-38510/33501 JM38510/33501BXA 54F32/BXAJC | |
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Contextual Info: Formosa MS SMD Switching Diode 1N4448W List List. 1 Package outline. 2 Features. 2 |
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1N4448W MIL-STD-750D METHOD-1056 METHOD-4066-2 METHOD-1051 1000hrs. METHOD-1021 | |
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Contextual Info: Diodes SMD Type Surface mount switching diode 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns Typ. 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 |
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1SS181 OT-23 100mA | |
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Contextual Info: Formosa MS SMD Switching Diode 1N4448W List List. 1 Package outline. 2 Features. 2 |
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1N4448W MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 METHOD-1031 | |
DIODE SMD T25
Abstract: 1N4448W SMD DIODE MARKING 14 SMD code YP a3 diode smd
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1N4448W MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 DIODE SMD T25 1N4448W SMD DIODE MARKING 14 SMD code YP a3 diode smd | |
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Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode KDS181-RTR SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ● Small total capacitance : CT = 2.2pF Typ 1 0.55 ● Fast reverse recovery time : t rr = 1.6ns (MAX.) +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low forward voltage : V F(3) = 0.92 V(Typ) |
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KDS181-RTR OT-23 | |
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Contextual Info: M ilita ry 5 4 F 8 6 MOTOROLA Quad 2-In p u t E xclusive OR G ate MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/34501 LOGIC DIAGRAM vcc A4 Y4 B3 A3 Y3 AVAILABLE AS: 1 JAN: JM38510/34501BXA 2) SMD: N/A 3) 883: 54F86/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C |
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MIL-M-38510/34501 JM38510/34501BXA 54F86/BXAJC | |